A non-volatile memory device, a method of operating the non-volatile memory device, and a memory system including the non-volatile memory device are provided. A non-volatile memory device includes a memory cell array including a plurality of memory cells configured to be each programmed to one state of a plurality of states, a page buffer circuit including a plurality of page buffers configured to each store received data as state data indicating a target state of a corresponding one of the plurality of memory cells, the page buffer circuit being configured to perform a state data reordering operation of changing a first state data order into a second state data order during performance of a program operation on selected memory cells of the plurality of memory cells, and a reordering control circuit configured to control the page buffer circuit to perform the state data reordering operation simultaneously with the program operation.

A first operation identifier is assigned to a current operation directed to a memory component, the first operation identifier having a first entry in a first data structure that associates the first operation identifier with a first buffer identifier. It is determined whether the current operation collides with a prior operation assigned a second operation identifier, the second operation identifier having a second entry in the first data structure that associates the second operation identifier with a second buffer identifier. A latest flag is updated to indicate that the first entry is a latest operation directed to an address (1) in response to determining that the current operation collides with the prior operation and that the current and prior operations are read operations, or (2) in response to determining to determining that the current operation does not collide with a prior operation.

The application discloses a memory controller coupled between a memory module and a host controller to control access of the host controller to the memory module, the memory controller comprising: a central buffer coupled to the host controller via a command/address bus to receive a command/address signal from the host controller, wherein the central buffer is configured to determine whether the command/address signal conforms to an authority management rule and configure a buffer control command based on the determination result, so that the buffer control command indicates whether to restrict access of the host controller to the memory module; and a data buffer coupled via a data buffer command channel to the central buffer to receive the buffer control command, wherein the data buffer is configured to selectively restrict access of the host controller to the memory module based on the buffer control command; wherein the buffer control command comprises a plurality of time-sequenced fields, and the central buffer is configured to configure a second field or a field after the second field of the plurality of time-sequenced fields in the buffer control command based on the determination result.

For a non-volatile memory that uses hard bit and a soft bit data in error correction operations, an on-the-fly compression scheme is used for the soft bit data. As soft bit data is transferred to a memory's input-output interface, the soft bit data is compressed prior to transmission to the an ECC engine memory controller, while hard bit data is transferred in un-compressed form.

Methods, non-transitory machine readable media, and computing devices that use extended physical region page (PRP) lists to improve storage device performance are disclosed. With this technology, a PRP list is generated that includes pointers retrieved from a scatter/gather list (SGL) for memory buffers representing data segments associated with a storage operation. The PRP list is extended to include a pointer to an allocated memory page configured to store metadata segments represented by other memory buffers referenced by other pointers in the SGL. A command request that includes the extended PRP list is submitted to a storage device for execution of the storage operation. With this technology, storage operations are advantageously enabled for non-volatile memory express (NVMe) solid-state drive (SSDs), for example, that do not support SGL transfers.

In one embodiment, one or more control units may store a position tracker associated with a first window of memory blocks and allow a first processing unit to write data within the first window. The control units may receive, from a second processing unit, a request for reading data with a memory-reading address, compare the memory-reading address to a first starting address of the first window, and prevent the second processing unit from reading the data when the memory-reading address is greater than or equal to the first starting address of the first window. The control units may store, when the data writing process is complete, an updated position tracker of a second window of memory blocks and allow the second processing unit to read the data based on a determination that the memory-reading address is less than a second starting address of the second window.

Systems and methods for implementing accelerated memory transfers in an integrated circuit includes configuring a region of memory of an on-chip data buffer based on a neural network computation graph, wherein configuring the region of memory includes: partitioning the region of memory of the on-chip data buffer to include a first distinct sub-region of memory and a second distinct sub-region of memory; initializing a plurality of distinct memory transfer operations from the off-chip main memory to the on-chip data buffer; executing a first set of memory transfer operations that includes writing a first set of computational components to the first distinct sub-region of memory, and while executing, using the integrated circuit, a leading computation based on the first set of computational components, executing a second set of memory transfer operations to the second distinct sub-region of memory for an impending computation.

A memory device comprises a memory array including memory cells, a communication interface to a host device, and a memory control unit operatively coupled to the memory array and the communication interface. The memory control unit is configured to store requests to access the memory in the queue, determine whether queued memory access requests are to sequential addresses of the memory array or to random addresses of the memory array, reduce an operating rate of one or more first components of the memory control unit when the queued memory access requests are to sequential addresses of the memory array, and reduce an operating rate of one or more second components of the memory control unit when the queued memory access requests are to random addresses of the memory array.

Provided are a non-volatile dual inline memory module (NVDIMM) supporting a DRAM cache mode and an operation method of the NVDIMM. The NVDIMM includes a DRAM chip, an NVM chip, and a controller that controls the DRAM chip to operate as a cache memory of the NVM chip. The controller sends a read command to the DRAM chip with reference to a cache address of data requested to be written from a host to the NVM chip, and sends a write command to the NVM chip with reference to an address of the data requested to be written at a time point when a read latency (RL) of the DRAM chip and a write latency (WL) of the NVM chip coincide with each other.

A memory device of a memory module includes a CA buffer that receives a command/address (CA) signal through a bus shared by a memory device different from the memory device of the memory module, and a calibration logic circuit that identifies location information of the memory device on the bus. The memory device recognizes its own location on a bus in a memory module to perform self-calibration, and thus, the memory device appropriately operates even under an operation condition varying depending on a location in the memory module.