G06F13/1673

INFORMATION PROCESSING APPARATUS AND METHOD OF ACCESSING A MEMORY
20180011636 · 2018-01-11 · ·

An information processing apparatus includes a memory, a processor, and a memory control circuit configured to execute receiving first data from the processor, receive a request that requires to restrict a change in write order of a plurality of pieces of data including the first data to the first memory, determine whether a storing process of the first data into a buffer is executed, transmit a notification to the processor when the storing process of the first data into the buffer is executed, receive second data included in the plurality of pieces of data transmitted from the processor based on the notification, store the second data into the buffer, execute a first writing process of writing the first data stored in the buffer to the memory, and execute a second writing process of writing the second data stored in the buffer to the memory after the first writing process.

Fault tolerant memory systems and components with interconnected and redundant data interfaces
11709736 · 2023-07-25 · ·

A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. The memory components can be configured to route data around defective data connections to maintain full capacity and continue to support memory transactions.

HIGH CAPACITY MEMORY SYSTEM USING STANDARD CONTROLLER COMPONENT
20230238048 · 2023-07-27 ·

The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.

MEMORY SYSTEM DESIGN USING BUFFER(S) ON A MOTHER BOARD

A mother board topology including a processor operable to be coupled to one or more communication channels for communicating commands. The topology includes a first communication channel electrically coupling a first set of two or more dual in-line memory modules (DIMMs) and a first primary data buffer on a mother board. The topology includes a second communication channel electrically coupling a second set of two or more DIMMs and a second primary data buffer on the mother board. The topology includes a third channel electrically coupling the first primary data buffer, the primary second data buffer, and the processor.

METHODS AND APPARATUS TO FACILITATE READ-MODIFY-WRITE SUPPORT IN A COHERENT VICTIM CACHE WITH PARALLEL DATA PATHS

Methods, apparatus, systems and articles of manufacture are disclosed facilitate read-modify-write support in a coherent victim cache with parallel data paths. An example apparatus includes a random-access memory configured to be coupled to a central processing unit via a first interface and a second interface, the random-access memory configured to obtain a read request indicating a first address to read via a snoop interface, an address encoder coupled to the random-access memory, the address encoder to, when the random-access memory indicates a hit of the read request, generate a second address corresponding to a victim cache based on the first address, and a multiplexer coupled to the victim cache to transmit a response including data obtained from the second address of the victim cache.

AUTOMATIC READ CONTROL SYSTEM BASED ON A HARDWARE ACCELERATED SPI AND AUTOMATIC READ CONTROL METHOD
20230004517 · 2023-01-05 ·

Disclosed is a hardware acceleration based automatic read control system and method for a serial peripheral interface (SPI). The automatic read control system includes an SPI module, an advanced peripheral bus (APB) module, an interrupt generation module, a direct memory access (DMA) controller, a state schedule control module, a register group module, a count signal generation module, a transmitted data buffer and a received data buffer; the state schedule control module, the register group module and the count signal generation module form a state machine system; and the state schedule control module controls automatic timed batch read of sensor data of the SPI according to configuration information of the register group module and counting and timing information of the count signal generation module.

AGGRESSIVE WRITE FLUSH SCHEME FOR A VICTIM CACHE
20230004500 · 2023-01-05 ·

A caching system including a first sub-cache and a second sub-cache in parallel with the first sub-cache, wherein the second sub-cache includes: line type bits configured to store an indication that a corresponding cache line of the second sub-cache is configured to store write-miss data, and an eviction controller configured to evict a cache line of the second sub-cache storing write-miss data based on an indication that the cache line has been fully written.

MULTI-DECK MEMORY DEVICE INCLUDING BUFFER CIRCUITRY UNDER ARRAY
20230005524 · 2023-01-05 ·

Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes a substrate, a first deck including first memory cell strings located over the substrate, a second deck including second memory cell strings and located over the first deck, first data lines located between the first and second decks and coupled to the first memory cell strings, second data lines located over the second deck and coupled to the second memory cell strings, and first and second circuitries. The first and second data lines extending in a direction from a first portion of the substrate to a second portion of the substrate. The first buffer circuitry is located in the first portion of the substrate under the first memory cell strings of the first deck and coupled to the first data lines. The second buffer circuitry is located in the second portion of the substrate under the first memory cell strings of the first deck and coupled to the second data lines.

High capacity memory system using standard controller component
11568919 · 2023-01-31 · ·

The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.

System and method for optimizing DRAM bus switching using LLC
11567885 · 2023-01-31 · ·

The present disclosure relates to a system and method for optimizing switching of a DRAM bus using LLC. An embodiment of the disclosure includes sending a first type request from a first type queue to the second memory via the memory bus if a direction setting of the memory bus is in a first direction corresponding to the first type request, decrementing a current direction credit count by a first type transaction decrement value, if the decremented current direction credit count is greater than zero, sending another first type request to the second memory via the memory bus and decrementing the current direction credit count again by the first type transaction decrement value, and if the decremented current direction credit count is zero, switching the direction setting of the memory bus to a second direction and resetting the current direction credit count to a second type initial value.