A memory controller configured to control a non-volatile memory device includes: a signal generator configured to generate a plurality of control signals comprising a first signal and a second control signal; a core configured to provide a command for an operation of the non-volatile device; and a controller interface circuit configured to interface with the non-volatile memory device, wherein the controller interface circuit comprises a first transmitter connected to a first signal line and a second signal line; and a first receiver connected to the first signal line, and the first control signal and the second control signal are respectively transmitted to the non-volatile memory device through the first signal line and the second signal line.

Embodiments of the present disclosure relate to a system and an operating method of the system. Based on some embodiments of the disclosed technology, the system may include a random access memory structured to include memory cells to store data, a cache memory configured to cache at least part of the data, and a processor in communication with the random access memory and the cache memory to access at least part of the data from the random access memory or cache memory. The system may determine a cache hit ratio for the cache memory, and may set an operating frequency of the random access memory based on the cache hit ratio.

A method for performing access management of a memory device in predetermined communications architecture with aid of flexible delay time control and associated apparatus are provided. The method may include: utilizing at least one upper layer controller of a transmission interface circuit within the memory controller to dynamically set a delay parameter regarding transmission from the memory device to a host device, for preventing sleeping in delay time(s) corresponding to the delay parameter; utilizing a physical layer (PHY) circuit of the transmission interface circuit to transmit first data from the memory device to the host device, wherein a first delay time starts from a first time point at which transmitting the first data from the memory device to the host device is completed; and utilizing the PHY circuit to start transmitting second data from the memory device to the host device in the first delay time without restarting from sleeping.

A method can include: receiving, in a memory device, a read request from a host device that is coupled to the memory device by an interface; decoding an address of the read request that is received from the interface; decoding a command of the read request to determine whether the read request is for an aligned address operation; maintaining the decoded address without modification when the read request is determined as being for the aligned address operation regardless of an actual alignment of the decoded address; and executing the read request as the aligned address operation on the memory device by using the decoded address.

An information terminal that uploads IC chip information to a server is provided.

The information terminal includes a reading unit that reads information from a recording medium at a first timing based on first information described in setting information, and an upload unit that uploads the information to an external device at a second timing based on second information described in the setting information. the recording medium is an IC chip built in the information terminal or an IC chip accessible from the information terminal. The reading unit reads IC chip information from the IC chip, and the upload unit uploads the IC chip information to the external device.

A semiconductor device with an interface includes a master device and a plurality of slave devices. The master device includes a master interface. The slave devices are stacked on the master device one after one as a three-dimension (3D) stack. Each of the slave devices includes a slave interface and a managing circuit, the master interface and the slave interfaces form the interface for passing signals in communication between the master device and the slave devices. The managing circuit of a current one of the slave devices drives a next one of the slave devices. An operation command received at the current one of the slave devices is just passed to the next one of the slave devices through the interface. A response from the current one of the slave devices is passed back to the master device through the interface.

Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.

A parsing method includes the following: during parsing target bank, performing a row hammer operation on a logical row in target bank to determine a physical position relationship of the logical row; repeatedly performing the operation of performing the row hammer operation on the logical row in target bank to determine the physical position relationship of the logical row until all logical rows have been parsed; and determining a mapping relationship used for recording physical position relationships of multiple logical rows according to a linked list; where performing the row hammer operation on the logical row in target bank includes: acquiring a to-be-parsed logical row in target bank including multiple logical rows; performing the row hammer operation on the to-be-parsed logical row until at least one flipped logical row is obtained; and writing the at least one flipped logical row into the linked list.

A method of operation in a memory controller is disclosed. The method includes receiving a strobe signal having a first phase relationship with respect to first data propagating on a first data line, and a second phase relationship with respect to second data propagating on a second data line. A first sample signal is generated based on the first phase relationship and a second sample signal is generated based on the second phase relationship. The first data signal is received using a first receiver clocked by the first sample signal. The second data signal is received using a second receiver clocked by the second sample signal.

In an embodiment, a system includes a contactless reader and an apparatus. The apparatus includes a contactless transponder including a contactless interface and a transponder wired interface and being configured to communicate with a contactless reader according to a contactless protocol through the contactless interface. The apparatus includes a bus coupled to the transponder wired interface, and at least one module coupled to the bus, the at least one module including a processing circuit, the contactless reader being configured to communicate instructions of a software program executable by the processing circuit to the at least one module through the contactless transponder.