A method includes instantiating a first plurality of rows in a first region of a fabric. The first region has a height corresponding to a sum of heights of the first plurality of rows. The method also includes instantiating a second plurality of rows in a second region of the fabric. The second region is horizontally adjacent to the first region in the fabric. The second region has a height corresponding to a sum of heights of the second plurality of rows. The method further includes determining whether a row of the first plurality of rows is misaligned with a row of the second plurality of rows and adding a transition region between the row of the first plurality of rows and the row of the second plurality of rows in response.

A method (of fabricating a power grid (PG) arrangement in a semiconductor) includes: forming a first conductive layer including segments which are conductive, including forming first segments designated for a first reference voltage and second segments designated for a second reference voltage, and interspersing the first and second segments; relative to a first direction; and forming a second conductive layer over the first conductive layer, the second conductive layer including segments that are conductive, including forming third segments designated for the first reference voltage and fourth segments designated for the second reference voltage, interspersing the third and fourth segments relative to a second direction, the second direction being perpendicular to the first direction, and arranging the segments in the second conductive layer substantially asymmetrically including, relative to the first direction, locating each fourth segment substantially asymmetrically between corresponding adjacent ones of the third segments.

A method (of fabricating a power grid (PG) arrangement in a semiconductor) includes: forming a first conductive layer including segments which are conductive, including forming first segments designated for a first reference voltage and second segments designated for a second reference voltage, and interspersing the first and second segments; relative to a first direction; and forming a second conductive layer over the first conductive layer, the second conductive layer including segments that are conductive, including forming third segments designated for the first reference voltage and fourth segments designated for the second reference voltage, interspersing the third and fourth segments relative to a second direction, the second direction being perpendicular to the first direction, and arranging the segments in the second conductive layer substantially asymmetrically including, relative to the first direction, locating each fourth segment substantially asymmetrically between corresponding adjacent ones of the third segments.

The present disclosure relates to a computer-implemented method for routing in an electronic design. Embodiments may include receiving, using at least one processor, global route data associated with an electronic design as an input and generating detail route data, based upon, at least in part, the global route data. Embodiments may further include transforming one or more of the detail route data and the global route data into at least one input feature and at least one output result of a deep neural network. Embodiments may also include training the deep neural network with the global route data and the detail route data and predicting an output associated with a detail route based upon, at least in part, a trained deep neural network model. Embodiments may also include generating routing information for each routing grid.

A semiconductor cell structure includes four pairs of conductive segments, a first gate-strip, and a second gate-strip. A first conductive segment is configured to have a first supply voltage, and a second conductive segment is configured to have a second supply voltage. Each of the first gate-strip and the second gate-strip intersects an active zone over a channel region of a transistor. The first gate-strip is conductively connected to the second conductive segment. The semiconductor cell structure also includes a first dummy gate-strip and a second dummy gate-strip. The first dummy gate-strip separates from the first gate-strip by one CPP. The second dummy gate-strip separates from the second gate-strip by one CPP. The first gate-strip and the second gate-strip are separated from each other by two CPPs. The dummy gate-strip and the second dummy gate-strip are separated from each other by four CPPs.

A semiconductor cell structure includes four pairs of conductive segments, a first gate-strip, and a second gate-strip. A first conductive segment is configured to have a first supply voltage, and a second conductive segment is configured to have a second supply voltage. Each of the first gate-strip and the second gate-strip intersects an active zone over a channel region of a transistor. The first gate-strip is conductively connected to the second conductive segment. The semiconductor cell structure also includes a first dummy gate-strip and a second dummy gate-strip. The first dummy gate-strip separates from the first gate-strip by one CPP. The second dummy gate-strip separates from the second gate-strip by one CPP. The first gate-strip and the second gate-strip are separated from each other by two CPPs. The dummy gate-strip and the second dummy gate-strip are separated from each other by four CPPs.

On-the-fly multi-bit flip-flop (MBFF) generation is provided by selecting at least two flip-flop blocks from a plurality of candidate flip-flop blocks; identifying a control block from a plurality of candidate control blocks, the control block being identified based on operational specifications of the selected flip-flop blocks; and generating a multi-bit flip-flop instance based on the selected flip-flop blocks and the identified control block.

On-the-fly multi-bit flip-flop (MBFF) generation is provided by selecting at least two flip-flop blocks from a plurality of candidate flip-flop blocks; identifying a control block from a plurality of candidate control blocks, the control block being identified based on operational specifications of the selected flip-flop blocks; and generating a multi-bit flip-flop instance based on the selected flip-flop blocks and the identified control block.

According to one implementation of the present disclosure, a method includes: generating a three-dimensional (3D) circuit design of an integrated circuit; and providing respective inter-tier connections coupling for first and second networks concurrently on the generated 3D circuit design. The first networks may include power or ground networks, while the second networks may include signal networks. In another implementation, a method includes: generating a three-dimensional (3D) circuit design of an integrated circuit; and providing inter-tier connections on the generated 3D circuit design during one of a placement stage, a partitioning stage, a clock tree synthesis (CTS) stage, or a routing stage of a physical circuit design procedure.

According to one implementation of the present disclosure, a method includes: generating a three-dimensional (3D) circuit design of an integrated circuit; and providing respective inter-tier connections coupling for first and second networks concurrently on the generated 3D circuit design. The first networks may include power or ground networks, while the second networks may include signal networks. In another implementation, a method includes: generating a three-dimensional (3D) circuit design of an integrated circuit; and providing inter-tier connections on the generated 3D circuit design during one of a placement stage, a partitioning stage, a clock tree synthesis (CTS) stage, or a routing stage of a physical circuit design procedure.