G11B5/313

Method of Forming a Perpendicular Magnetic Recording (PMR) Write Head with Patterned Leading Edge Taper
20190206428 · 2019-07-04 ·

A method is disclosed for forming a perpendicular magnetic recording writer with an all wrap around (AWA) shield design wherein a surface of the leading shield that contacts the lead gap has a notch that is recessed 20 to 120 nm from the air bearing surface (ABS) and has a first side with a down-track dimension of 20-200 nm that is aligned parallel to the ABS. In one embodiment, the notch is aligned below the main pole leading side and has a cross-track width substantially the same as the track width of the main pole trailing side. The notch has two sidewalls formed equidistant from a center plane that bisects the leading shield wherein each sidewall intersects the first side at an angle of 90 to 170 degrees. Accordingly, overwrite and bit error rate are improved while adjacent track interference and tracks per square inch capability are substantially maintained.

MAGNETIC TUNNEL JUNCTIONS SUITABLE FOR HIGH TEMPERATURE THERMAL PROCESSING
20190172485 · 2019-06-06 ·

Embodiments herein provide methods of forming a magnetic tunnel junction structure. The method includes forming a film stack that includes: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru; and forming a magnetic tunnel junction structure.

Magnetic tunnel junctions suitable for high temperature thermal processing

Embodiments herein provide film stacks utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.

PMR write head with patterned leading edge taper

A perpendicular magnetic recording writer is disclosed with an all wrap around (AWA) shield design in which a surface of the leading shield that contacts the lead gap is comprised of a notch that is recessed 20 to 120 nm from the air bearing surface (ABS) and has a first side with a down-track dimension of 20-200 nm that is aligned parallel to the ABS. In one embodiment, the notch is aligned below the main pole leading side and has a cross-track width substantially the same as the track width of the main pole trailing side. The notch has two sidewalls formed equidistant from a center plane that bisects the leading shield wherein each sidewall intersects the first side at an angle of 90 to 170 degrees. Accordingly, overwrite and bit error rate are improved while adjacent track interference and tracks per square inch capability are substantially maintained.

Electrical isolation of read sensors during fabrication

A method includes depositing a plurality of layers over a substrate. The layers include read sensor layers and an electrically conductive layer substantially coplanar with the read sensor layers and substantially surrounding the read sensor layers. The electrically conductive layer is in contact with at least one of the read sensor layers. The electrically conductive layer provides an electrical path between the at least one of the read sensor layers and ground. The method further includes forming an isolation structure around the read sensor layers by removing a portion of the electrically conductive layer substantially surrounding the read sensor layers. The isolation structure is substantially coplanar with the read sensor layers and substantially surrounds the read sensor layers. The isolation structure breaks the electrical path between the at least one of the read sensor layers and the ground.

Devices including a near field transducer and at least one associated adhesion layer

Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: yttrium (Y), tin (Sn), iron (Fe), copper (Cu), carbon (C), holmium (Ho), gallium (Ga), silver (Ag), ytterbium (Yb), chromium (Cr), tantalum (Ta), iridium (Ir), zirconium (Zr), yttrium (Y), scandium (Sc), cobalt (Co), silicon (Si), nickel (Ni), molybdenum (Mo), niobium (Nb), palladium (Pd), titanium (Ti), rhenium (Re), osmium (Os), platinum (Pt), aluminum (Al), ruthenium (Ru), rhodium (Rh), vanadium (V), germanium (Ge), tin (Sn), magnesium (Mg), iron (Fe), copper (Cu), tungsten (W), hafnium (Hf), carbon (C), boron (B), holmium (Ho), antimony (Sb), gallium (Ga), manganese (Mn), silver (Ag), indium (In), bismuth (Bi), zinc (Zn), ytterbium (Yb), and combinations thereof.

MAGNETIC TUNNEL JUNCTIONS SUITABLE FOR HIGH TEMPERATURE THERMAL PROCESSING
20190027169 · 2019-01-24 ·

Embodiments herein provide film stacks utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.

Tape apparatus having an array of write transducers each having at least three layers of coils

A magnetic recording tape writing apparatus includes an array of write transducers extending along a common tape bearing surface. Each of the write transducers has a lower pole having a lower pole tip, a lower coil layer above the lower pole, an intermediate coil layer above the lower coil layer, and an upper coil layer above the intermediate coil layer. An upper pole is positioned above the upper coil layer, the upper pole having an upper pole tip. In one embodiment, a nonmagnetic write gap is positioned between the pole tips, a plane of deposition of the write gap extending between the intermediate coil layer and the lower coil layer. In another embodiment, a nonmagnetic write gap is positioned between the pole tips, a plane of deposition of the write gap extending between the intermediate coil layer and the upper coil layer.

PMR Write Head with Patterned Leading Edge Taper
20180330748 · 2018-11-15 ·

A PMR writer is disclosed with an all wrap around (AWA) shield design in which a surface of the leading shield that contacts the lead gap is comprised of a notch that is recessed 20 to 120 nm from the air bearing surface (ABS) and has a first side with a down-track dimension of 20-200 nm that is aligned parallel to the ABS. In one embodiment, the notch is aligned below the main pole leading side and has a cross-track width substantially the same as the track width of the main pole trailing side. The notch has two sidewalls formed equidistant from a center plane that bisects the leading shield wherein each sidewall intersects the first side at an angle of 90 to 170 degrees. As a result, overwrite and bit error rate are improved while adjacent track interference and tracks per square inch capability are substantially maintained.

Perpendicular magnetic recording and reproducing device

According to one embodiment, a magnetic recording and reproducing device includes a magnetic recording medium, a magnetic head, and a controller. The controller implements a first operation and a second operation. The first operation is implemented in a first information recording interval including a first recording interval and a first non-recording interval. The second operation is implemented in a second information recording interval including a second recording interval and a second non-recording interval. The first operation includes in the first recording interval, generating a first signal magnetic field from the magnetic head, and in the first non-recording interval, generating a first non-signal magnetic field from the magnetic head. The second operation includes in the second recording interval, generating a second signal magnetic field from the magnetic head, and in the second non-recording interval, generating a second non-signal magnetic field from the magnetic head.