A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1),
Ru.sub.?X.sub.1-?(1) where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol ? represents a number satisfying 0.5<?<1, the first ferromagnetic layer contains a Heusler alloy, and the second ferromagnetic layer contains a Heusler alloy.

A magnetic field detection device includes a Z-direction detection unit with magnetoresistive elements provided on inclined side surfaces of Z-direction detection recesses; an X-direction detection unit includes magnetoresistive elements provided on inclined side surfaces of X-direction detection recesses and a Y-detection unit includes magnetoresistive elements provided on inclined side surfaces of Y-direction detection recesses, each of the detection units having a bridge circuit comprising two element lines connected in parallel, each element line comprising two of the magnetoresistive elements connected in series.

The present disclosure generally relates to magnetic media devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The recording head includes a main pole, a trailing shield hot seed layer, a spin Hall layer disposed between the main pole and the trailing shield hot seed layer, and a spin-torque layer disposed between the main pole and the trailing shield hot seed layer. Spin-orbit torque (SOT) is generated from the spin Hall layer. The spin-torque layer magnetization switching or precession is induced by the SOT. The SOT based head reduces the switching current and the V.sub.jump due to higher spin polarization ratio, which improves energy efficiency. In addition, the spin Hall layer and the spin-torque layer are easier to form compared to the conventional pseudo spin-valve structure.

Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.

A Z detection unit includes magnetoresistive elements provided on inclined side surfaces of Z detection recesses. An X detection unit includes magnetoresistive elements provided on inclined side surfaces of X detection recesses. A Y detection unit includes magnetoresistive elements provided on inclined side surfaces of Y detection recesses. Directions of fixed magnetization of fixed magnetic layers included in the magnetoresistive elements are set to directions shown by arrows with solid lines.

A Z detection unit includes magnetoresistive elements provided on inclined side surfaces of Z detection recesses. An X detection unit includes magnetoresistive elements provided on inclined side surfaces of X detection recesses. A Y detection unit includes magnetoresistive elements provided on inclined side surfaces of Y detection recesses.

A magnetic sensor that generates a signal based on inverse spin Hall effect. The sensor includes a magnetic free layer and a non-magnetic, electrically conductive spin Hall layer located adjacent to the magnetic free layer. Circuitry is configured to supply an electrical current that travels through the magnetic free layer and the spin Hall layer in a direction that is generally perpendicular to the plane of the layers or perpendicular to a plane defined by an interface between the magnetic free layer and the spin Hall layer. The inverse spin Hall effect causes an electrical voltage in the spin Hall layer as a result of the current, and the voltage changes relative to the orientation of magnetization of the magnetic free layer. Circuitry is provided for measuring the voltage in the spin Hall layer in a direction that is generally perpendicular to the direction of the electrical current.

The present disclosure generally relates to a magnetic recording head comprising a spintronic device for magnetic media, such as a magnetic media drive. The spintronic device includes at least one spin Hall layer as well as at least one buffer layer and at least one interlayer. The buffer layer is positioned proximate a main pole of a write head while the interlayer is positioned proximate a trailing shield of the write head. The spin Hall layer is positioned between the buffer layer and the interlayer. The spintronic element may be disposed at the media facing surface (MFS) or recessed from the MFS. The spintronic device is capable of injecting spin current to the main pole, the trailing shield, or both.

A read head having a spin-to-charge or charge-to-spin sensing layer comprising amorphous materials, e.g. FeSi or CoSi, omits the need for a crystalline seed layer. Unlike many other material candidates (e.g., BiSb, YBiPt), amorphous sensing layers do not require crystalline seed layers for growth and still exhibit adequate signal. Since seed layers are no longer needed for growth, signal shunting from the seed layer is eliminated and read heads having bottom and top structures may be more easily designed. Furthermore, FeSi and CoSi have increased thermal stability over most material candidates for sensing layers. Accordingly, amorphous sensing layers, such as FeSi or CoSi, are better suited to survive the annealing process of read heads. Thus, the use of FeSi or CoSi, in the sensing layer, results in a better performing, customizable, thermally stable read head.