An object of the present invention is to reduce the size and cost of a magnetic sensor suitable for closed loop control. A magnetic sensor includes a magnetoresistive effect element MR1 electrically connected between terminals 41 and 42 and extending in the x-direction and a magnetic member 31 electrically connected between terminal and 44 and extending in the x-direction along the magnetoresistive effect element MR1. The magnetoresistive effect element MR1 is disposed offset with respect to the center position of the magnetic member 31 in the y-direction. According to the present invention, magnetic flux to be detected is collected by the magnetic member 31, and current is made to flow in the magnetic member 31 in accordance with the resistance value of the magnetoresistive effect element MR1, whereby closed loop control can be achieved. That is, the magnetic member 31 has both a magnetism collection function and a function as a cancel coil, thereby reducing the number of elements required, which achieves reduction in size and cost.

Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.

A magnetoresistance effect element has a structure in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are subsequently laminated and outer circumferential portions of the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer are covered with a first insulating film which contains silicon nitride as a main component and has boron nitride or aluminum nitride further added thereto.

Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.

A reader having a sensor stack and a top shield above the sensor stack. The top shield has an upper surface and a lower surface. The reader also includes at least one side shield below the top shield and adjacent to the sensor stack. The reader further includes a decoupling layer between the upper surface of the top shield and the at least one side shield. The decoupling layer is configured to decouple a first portion of the at least one side shield, proximate to the sensor stack, from at least a portion of the top shield.

The present disclosure involves electronic test structures, and related methods, for use with one or more magnetoresistive elements at least at the wafer stage of slider manufacturing.

An exchange coupling film in which a magnetic field (Hex) at which the magnetization direction of a pinned magnetic layer is reversed is high, in which stability under high-temperature conditions is high, and which is excellent in strong-magnetic field resistance. The exchange coupling film includes an antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer, the antiferromagnetic layer and the pinned magnetic layer being stacked together. The antiferromagnetic layer has a structure including a PtCr layer, a PtMn layer, and an IrMn layer stacked in this order. The IrMn layer is in contact with the pinned magnetic layer. The thickness of the PtMn layer is 12 or more, and the thickness of the IrMn layer is 6 . The sum of the thickness of the PtMn layer and the thickness of the IrMn layer is 20 or more.

A reader having a sensor stack and a top shield above the sensor stack. The top shield has an upper surface and a lower surface. The reader also includes at least one side shield below the top shield and adjacent to the sensor stack. The reader further includes a decoupling layer between the upper surface of the top shield and the at least one side shield. The decoupling layer is configured to decouple a first portion of the at least one side shield, proximate to the sensor stack, from at least a portion of the top shield.

According to one embodiment, a magnetic head includes a reproducing portion. The reproducing portion includes first to fourth magnetic portions and a stacked body. The third magnetic portion is provided between the first and second magnetic portions. The fourth magnetic portion is provided between the first and second magnetic portions. A second direction from the third magnetic portion toward the fourth magnetic portion crosses a first direction from the first magnetic portion toward the second magnetic portion. The stacked body is provided between the first and second magnetic portions in the first direction and between the third and fourth magnetic portions in the second direction. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the second magnetic portion in the first direction, and an intermediate layer provided between the first and second magnetic layers in the first direction.

A magnetoresistive (MR) sensor shield shields against both down track and cross-track interference and is formed in a single deposition step. A tail portion of the shield is eliminated by including a non-magnetic material adjacent to opposite sides of a middle portion of the sensor stack.