A magnetic recording medium is provided and includes a layer structure including a magnetic layer, a non-magnetic layer, and a base layer in order, in which an average thickness t.sub.T of the magnetic recording medium is 4.0 μm≤t.sub.T≤5.3 μm, a dimensional variation Δw in a width direction of the magnetic recording medium to tension change in a longitudinal direction of the magnetic recording medium is 680 ppm/N≤Δw≤2000 ppm/N, and an average thickness t.sub.n of the non-magnetic layer is t.sub.n≤1.0 μm.

Provided is a magnetic recording medium having a recording track width of 2 μm or less, including: a recording layer containing a powder of particles containing ε iron oxide, in which a squareness ratio measured in a transport direction is 30% or less, a squareness ratio S1 measured in the transport direction and a squareness ratio S2 measured in a width direction satisfy a relationship S1≥S2, a coercive force is 220 kA/m or greater and 310 kA/m or less, an activation volume is 8000 nm.sup.3 or less, and in a switching field distribution (SFD) curve, a peak ratio X/Y of a main peak height X and a height Y of a sub-peak near zero magnetic field is 3.0 or greater.

Provided is a magnetic recording medium having a recording track width of 2 μm or less, including: a recording layer containing a powder of particles containing ε iron oxide, in which a squareness ratio measured in a transport direction is 30% or less, a squareness ratio S1 measured in the transport direction and a squareness ratio S2 measured in a width direction satisfy a relationship S1≥S2, a coercive force is 220 kA/m or greater and 310 kA/m or less, an activation volume is 8000 nm.sup.3 or less, and in a switching field distribution (SFD) curve, a peak ratio X/Y of a main peak height X and a height Y of a sub-peak near zero magnetic field is 3.0 or greater.

Various apparatuses, systems, methods, and media are disclosed to provide a magnetic recording medium with a tungsten (W) pre-seed layer. The W pre-seed layer has a higher conductance than a CrTi pre-seed layer with a similar thickness. In one embodiment, the W pre-seed layer is made of about 95 atomic percent or more of W. The W pre-seed layer has lower electrical resistivity than the CrTi pre-seed layer. As a result, the thickness of the W pre-seed layer can be reduced as compared to the thickness of a CrTi pre-seed layer if a similar conductance is to be achieved. The magnetic recording materials deposited on top of the W pre-seed layer with the reduced thickness provide comparable crystallographic orientation and recording performance to those deposited on top of a thicker CrTi pre-seed layer with a similar conductance.

Various apparatuses, systems, methods, and media are disclosed to provide a magnetic recording medium with a tungsten (W) pre-seed layer. The W pre-seed layer has a higher conductance than a CrTi pre-seed layer with a similar thickness. In one embodiment, the W pre-seed layer is made of about 95 atomic percent or more of W. The W pre-seed layer has lower electrical resistivity than the CrTi pre-seed layer. As a result, the thickness of the W pre-seed layer can be reduced as compared to the thickness of a CrTi pre-seed layer if a similar conductance is to be achieved. The magnetic recording materials deposited on top of the W pre-seed layer with the reduced thickness provide comparable crystallographic orientation and recording performance to those deposited on top of a thicker CrTi pre-seed layer with a similar conductance.

A magnetic recording medium including: a non-magnetic substrate; an underlayer; a perpendicular magnetic layer; a diffusion preventing layer; and a protective layer, wherein the underlayer, the perpendicular magnetic layer, the diffusion preventing layer, and the protective layer are layered on the non-magnetic substrate in this order, the perpendicular magnetic layer has a multi-layer structure, the perpendicular magnetic layer includes an uppermost layer and at least one layer other than the uppermost layer, the uppermost layer including Co or Fe in magnetic particles, and the at least one layer other than the uppermost layer including an oxide, the diffusion preventing layer is provided between the perpendicular magnetic layer and the protective layer, and the diffusion preventing layer includes at least one component selected from a group consisting of Si, Ti, Cr, B, and Ru, or either a carbide, an oxide, or both, of the at least one component.

A magnetic recording medium including: a non-magnetic substrate; an underlayer; a perpendicular magnetic layer; a diffusion preventing layer; and a protective layer, wherein the underlayer, the perpendicular magnetic layer, the diffusion preventing layer, and the protective layer are layered on the non-magnetic substrate in this order, the perpendicular magnetic layer has a multi-layer structure, the perpendicular magnetic layer includes an uppermost layer and at least one layer other than the uppermost layer, the uppermost layer including Co or Fe in magnetic particles, and the at least one layer other than the uppermost layer including an oxide, the diffusion preventing layer is provided between the perpendicular magnetic layer and the protective layer, and the diffusion preventing layer includes at least one component selected from a group consisting of Si, Ti, Cr, B, and Ru, or either a carbide, an oxide, or both, of the at least one component.

According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a stacked body provided between the first and second magnetic poles. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic pole and the first magnetic layer, a third magnetic layer provided between the first magnetic pole and the second magnetic layer, a first nonmagnetic layer provided between the first magnetic layer and the second magnetic pole, a second nonmagnetic layer provided between the second and first magnetic layers, and a third nonmagnetic layer provided between the third and second magnetic layers. The third magnetic layer includes first and second elements. The first and second magnetic layers do not include the second element. Or concentrations of the second element in the first and second magnetic layers are less than in the third magnetic layer.

To provide a magnetic recording tape and the like that have excellent magnetic properties and exhibit a favorable SNR. There are provided a magnetic recording tape and the like including at least: a base layer that includes a long film having flexibility; and a magnetic layer formed on a side of one main surface of the base layer, in which an under layer and a seed layer are provided in the stated order from a side of the magnetic layer toward a side of the base layer between the magnetic layer and the base layer, the underlayer contains at least Co and Cr, and has an average atomic number ratio represented by the following formula (1): Co.sub.(100-y)Cr.sub.y (where y is within a range of 37≤y≤45.), and the seed layer formed directly on the base layer has a film thickness of 5 nm or more and 30 nm or less, and contains Ti and O and has an average atomic number ratio represented by the following formula (2): Ti.sub.(100-x)O.sub.x (where x≤10.) or contains Ti—Cr—O and has an average atomic number ratio represented by the following formula (3): (TiCr).sub.(100-x)O.sub.x (where x≤10.).

To provide a magnetic recording tape and the like that have excellent magnetic properties and exhibit a favorable SNR. There are provided a magnetic recording tape and the like including at least: a base layer that includes a long film having flexibility; and a magnetic layer formed on a side of one main surface of the base layer, in which an under layer and a seed layer are provided in the stated order from a side of the magnetic layer toward a side of the base layer between the magnetic layer and the base layer, the underlayer contains at least Co and Cr, and has an average atomic number ratio represented by the following formula (1): Co.sub.(100-y)Cr.sub.y (where y is within a range of 37≤y≤45.), and the seed layer formed directly on the base layer has a film thickness of 5 nm or more and 30 nm or less, and contains Ti and O and has an average atomic number ratio represented by the following formula (2): Ti.sub.(100-x)O.sub.x (where x≤10.) or contains Ti—Cr—O and has an average atomic number ratio represented by the following formula (3): (TiCr).sub.(100-x)O.sub.x (where x≤10.).