A heat-assisted magnetic recording medium includes: a substrate; an underlayer; and a magnetic layer including an alloy having an L1.sub.0 structure, wherein the underlayer includes, from the substrate side, a bcc underlayer including a substance having a bcc structure, a first oxide layer that is in contact with the bcc underlayer, and a second oxide layer that is in contact with the magnetic layer. The bcc underlayer, the first oxide layer, and the second oxide layer are stacked in the recited order. The first oxide layer and the second oxide layer include magnesium oxide, and the second oxide layer further includes one or more compounds selected from the group consisting of vanadium oxide, vanadium nitride, and vanadium carbide.

A magnetic recording medium includes a substrate; a soft magnetic underlayer laminated on the substrate; an amorphous barrier layer laminated on the soft magnetic underlayer; and a magnetic recording layer laminated on the amorphous barrier layer, wherein the soft magnetic underlayer includes Fe, B, Si, and one or more elements selected from the group consisting of Nb, Zr, Mo, and Ta, wherein the amorphous barrier layer includes Si, W, and one or more elements selected from the group consisting of Nb, Zr, Mo, and Ta, and wherein the magnetic recording layer includes an alloy having an L1.sub.0 structure.

A magnetic recording medium includes a substrate; a soft magnetic underlayer laminated on the substrate; an amorphous barrier layer laminated on the soft magnetic underlayer; and a magnetic recording layer laminated on the amorphous barrier layer, wherein the soft magnetic underlayer includes Fe, B, Si, and one or more elements selected from the group consisting of Nb, Zr, Mo, and Ta, wherein the amorphous barrier layer includes Si, W, and one or more elements selected from the group consisting of Nb, Zr, Mo, and Ta, and wherein the magnetic recording layer includes an alloy having an L1.sub.0 structure.

The present invention relates to a magnetic recording medium including a substrate; an underlayer laminated upon the substrate; and a magnetic layer laminated upon the underlayer, wherein the underlayer includes a first underlayer containing a compound represented by a following general formula: MgO.sub.(1-X), where X is within a range of 0.07 to 0.25, the magnetic layer includes a first magnetic layer containing an alloy having a L1.sub.0 structure, and the alloy having the L1.sub.0 structure includes B, and the first underlayer is in contact with the first magnetic layer.

A magnetic recording medium includes a layer structure including a magnetic layer, a base layer, and a back layer in this order, in which an average thickness t.sub.T is t.sub.T≤5.5 μm, a dimensional variation Δw in a width direction to tension change in a longitudinal direction is 660 ppm/N≤Δw, and a surface roughness R.sub.abe of the base layer on a side of the back layer is 4.2 nm≤R.sub.abe≤8.5 nm.

To provide a magnetic recording tape and the like that have excellent magnetic properties and exhibit a favorable SNR. There are provided a magnetic recording tape and the like including at least: a base layer that includes a long film having flexibility; and a magnetic layer formed on a side of one main surface of the base layer, in which an under layer and a seed layer are provided in the stated order from a side of the magnetic layer toward a side of the base layer between the magnetic layer and the base layer, the underlayer contains at least Co and Cr, and has an average atomic number ratio represented by the following formula (1): Co.sub.(100-y)Cr.sub.y (where y is within a range of 37≤y≤45.), and the seed layer formed directly on the base layer has a film thickness of 5 nm or more and 30 nm or less, and contains Ti and O and has an average atomic number ratio represented by the following formula (2): Ti.sub.(100-x)O.sub.x (where x≤10.) or contains Ti—Cr—O and has an average atomic number ratio represented by the following formula (3): (TiCr).sub.(100-x)O.sub.x (where x≤10.).

The present invention is to provide an assisted magnetic recording medium including a substrate; an underlayer disposed on the substrate; a magnetic layer disposed on the underlayer and including an alloy having an L1.sub.0-type crystal structure; and a pinning layer disposed in contact with the magnetic layer, wherein the pinning layer includes a granular structure, the granular structure containing magnetic particles and grain boundaries, wherein the magnetic particles contain Co, and wherein the grain boundaries contain Y.sub.2O.sub.3 and/or an oxide of lanthanoid.

The purpose of the present invention is to provide a magnetic recording medium having a stacked structure of a seed layer including (Mg.sub.1-xTi.sub.x)O and a magnetic recording layer including an L1.sub.0 ordered alloy, and having improved properties. The method for producing a magnetic recording layer according to the present invention includes the steps of: (1) preparing a substrate; (2) forming a seed layer including (Mg.sub.1-xTi.sub.x)O onto the substrate; (3) plasma etching the seed layer in an atmosphere including inert gas; and (4) forming a magnetic recording layer including an ordered alloy onto the seed layer which has been subjected to the step (3).

Described is an apparatus which comprises: a heat spreading layer; a first transition metal layer adjacent to the heat spreading layer; and a magnetic recording layer adjacent to the first transition metal layer. Described is an apparatus which comprises: a first electrode; a magnetic junction having a free magnet; and one or more layers of Jahn-Teller material adjacent to the first electrode and the free magnet of the magnetic junction.

To provide a magnetic recording tape that exhibits excellent tape dimension stability even if there are changes in temperature or humidity or even if tension is applied to the magnetic recording tape during tape travelling.

The present technology provides a magnetic recording tape, the tape (T1 or T2) having a total thickness of 5.6 m or less and including a magnetic layer 1, a non-magnetic layer 2, a base layer 3, and a back layer 4 in the stated order. In one embodiment, a deposition film layer A formed of a metal or an oxide thereof is provided on a lower-layer side of the non-magnetic layer 2. The deposition film layer A may be provided on the back layer 4 and an insulation layer B may also be provided between the deposition film layer A the non-magnetic layer 2.