Magnetic recording media including an interlayer configured to reduce lattice mismatch with adjacent layers of the media, such as an adjacent seed layer or an adjacent underlayer. In one example, an interlayer alloy is provided that includes tungsten (W) along with Cobalt (Co), Chromium (Cr), and Ruthenium (Ru). The atomic percentages of W and Ru within the interlayer are selected so that the amount lattice mismatch between the interlayer and its adjacent layers is below a preselected amount, such as below 3% as quantified by d-spacing. In some examples, the atomic percentage of Ru is greater than 25% and the atomic percentage of W is 2-10%. Methods of fabricating the magnetic recording media are also provided.

Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, Fe.sub.xCo.sub.yMn.sub.z layers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the Fe.sub.xCo.sub.yMn.sub.z layers. Magnetizations greater than 3 Bohr magnetons are produced.

A magnetic recording medium includes a non-magnetic substrate; a soft magnetic layer; a first seed layer; a second seed layer; an underlayer; and a perpendicular magnetic recording layer. The soft magnetic layer, the first seed layer, the second seed layer, the underlayer and the perpendicular magnetic recording layer are disposed on the non-magnetic substrate in this order. The first seed layer includes MoS.sub.2, hexagonal-BN, WS.sub.2, WSe.sub.2 or graphite. The second seed layer includes AlN having a hexagonal wurtzite type crystal structure. The underlayer includes Ru.

A magnetic recording medium is provided and includes a layer structure including a magnetic layer, a non-magnetic layer, and a base layer in this order, in which an average thickness t.sub.T of the magnetic recording medium is 3.5 μm≤t.sub.T≤5.3 μm, a dimensional variation Δw in a width direction of the magnetic recording medium to tension change in a longitudinal direction of the magnetic recording medium is 700 ppm/N≤Δw≤2000 ppm/N, and an average thickness t.sub.n of the non-magnetic layer is t.sub.n≤1.0 μm.

A magnetic stack includes a substrate and a soft magnetic underlayer deposited on a top surface of the substrate. A heat sink layer is disposed on top of the soft magnetic underlayer, and an interlayer is deposited on top of the heat sink layer. A non-magnetic seed layer is deposited on top of the interlayer. A magnetic recording structure which includes more than one magnetic recording layer is deposited on the top surface of the non-magnetic seed layer.

A magnetic recording medium is provided and includes a layer structure including a magnetic layer, a non-magnetic layer, and a base layer in order, in which an average thickness t.sub.T of the magnetic recording medium is 4.0 μm≤t.sub.T≤5.3 μm, a dimensional variation Δw in a width direction of the magnetic recording medium to tension change in a longitudinal direction of the magnetic recording medium is 680 ppm/N≤Δw≤2000 ppm/N, and an average thickness t.sub.n of the non-magnetic layer is t.sub.n≤1.0 μm.

An object is to provide a magnetic recording medium having favorable crystal orientation characteristics and exhibiting a high SNR.

The present technology provides a magnetic recording medium having a layer structure including a recording layer, a ground layer, and a base layer in this order, in which the ground layer includes a first ground layer on the recording layer side and a second ground layer on the base layer side, the first ground layer contains a nonmagnetic oxide, the first ground layer has a thickness of 2 nm or more and 10 nm or less, and the second ground layer has a thickness of 40 nm or more. Furthermore, the present technology also provides a magnetic recording cartridge including the magnetic recording medium.

Various apparatuses, systems, methods, and media are disclosed to provide a magnetic recording medium with a tungsten (W) pre-seed layer. The W pre-seed layer has a higher conductance than a CrTi pre-seed layer with a similar thickness. In one embodiment, the W pre-seed layer is made of about 95 atomic percent or more of W. The W pre-seed layer has lower electrical resistivity than the CrTi pre-seed layer. As a result, the thickness of the W pre-seed layer can be reduced as compared to the thickness of a CrTi pre-seed layer if a similar conductance is to be achieved. The magnetic recording materials deposited on top of the W pre-seed layer with the reduced thickness provide comparable crystallographic orientation and recording performance to those deposited on top of a thicker CrTi pre-seed layer with a similar conductance.

There is provided a magnetic recording medium including a base; a seed layer; a foundation layer; and a recording layer, the seed layer being disposed between the base and the foundation layer, having an amorphous state, including an alloy containing Ti, Cr and O, a percentage of Ti being 30 atomic % to 100 atomic % based on a total amount of Ti and Cr contained in the seed layer, and a percentage of O being 15 atomic % or less based on a total amount of Ti, Cr and O contained in the seed layer. Also, a production method thereof is provided.

To provide a magnetic recording tape and the like that have excellent magnetic properties and exhibit a favorable SNR. There are provided a magnetic recording tape and the like including at least: a base layer that includes a long film having flexibility; and a magnetic layer formed on a side of one main surface of the base layer, in which an under layer and a seed layer are provided in the stated order from a side of the magnetic layer toward a side of the base layer between the magnetic layer and the base layer, the underlayer contains at least Co and Cr, and has an average atomic number ratio represented by the following formula (1): Co.sub.(100-y)Cr.sub.y (where y is within a range of 37≤y≤45.), and the seed layer formed directly on the base layer has a film thickness of 5 nm or more and 30 nm or less, and contains Ti and O and has an average atomic number ratio represented by the following formula (2): Ti.sub.(100-x)O.sub.x (where x≤10.) or contains Ti—Cr—O and has an average atomic number ratio represented by the following formula (3): (TiCr).sub.(100-x)O.sub.x (where x≤10.).