An optical recording medium includes a transmissive recording layer containing an oxide of a metal M.sub.A, an oxide of a metal M.sub.B, and an oxide of a metal M.sub.C. The metal M.sub.A is at least one kind selected from the group consisting of Mn and Ni. The metal M.sub.B is at least one kind selected from the group consisting of W and Mo. The metal Mc is Zr. An atomic ratio (M.sub.A/M.sub.B) of the metal M.sub.A to the metal M.sub.B is not less than 0.37 and not more than 1.31. The metal M.sub.C is contained in the transmissive recording layer at not less than 0.9 atomic % and not more than 27.5 atomic %.

An optical recording medium includes a transmissive recording layer containing an oxide of a metal M.sub.A, an oxide of a metal M.sub.B, and an oxide of a metal M.sub.C. The metal M.sub.A is at least one kind selected from the group consisting of Mn and Ni. The metal M.sub.B is at least one kind selected from the group consisting of W and Mo. The metal Mc is Zr. An atomic ratio (M.sub.A/M.sub.B) of the metal M.sub.A to the metal M.sub.B is not less than 0.37 and not more than 1.31. The metal M.sub.C is contained in the transmissive recording layer at not less than 0.9 atomic % and not more than 27.5 atomic %.

An information recording medium according to the present disclosure is an information recording medium of a write-once-read-many type and records or reproduces information when irradiated with laser light. The information recording medium includes: a substrate; a plurality of information layers at least one information layer of which includes a recording film that is a W—O-based recording film comprising at least tungsten (W) and oxygen (O); and a dielectric film A in contact with the W—O-based recording film, the dielectric film A comprising at least 30 mol % tin oxide.

Long term optical memory includes a storage medium composed from an array of silicon nanoridges positioned onto the fused silica glass. The array has first and second polarization contrast corresponding to different phase of silicon. The first polarization contrast results from amorphous phase of silicon and the second polarization contrast results from crystalline phase of silicon. The first and second polarization states are spatially distributed over plurality of localized data areas of the storage medium.

An optical storage medium, a method for preparing an optical storage medium, and a system are provided. In this application, the optical storage medium includes a substrate and at least one data layer, the data layer includes a recording layer and a spacer layer, the recording layer is located on the spacer layer, and the data layer is located above the substrate. The recording layer may store data, the recording layer includes an area in which a phase change material is distributed and an area in which no phase change material is distributed, and the two different areas may indicate different data.

An optical storage medium, a method for preparing an optical storage medium, and a system are provided. In this application, the optical storage medium includes a substrate and at least one data layer, the data layer includes a recording layer and a spacer layer, the recording layer is located on the spacer layer, and the data layer is located above the substrate. The recording layer may store data, the recording layer includes an area in which a phase change material is distributed and an area in which no phase change material is distributed, and the two different areas may indicate different data.

The present invention relates to a method for recording data in a layer of a ceramic material and to a device for recording data in a layer of a ceramic material.

The present invention relates to a method for recording data in a layer of a ceramic material and to a device for recording data in a layer of a ceramic material.

An optical recording medium includes a plurality of information signal layers. The plurality of information signal layers include a recording layer having a first surface that faces a light irradiation surface and a second surface on the side opposite to the first surface, a first dielectric layer that is provided on the side of the first surface, and a second dielectric layer that is provided on the side of the second surface. The second dielectric layer provided in the information signal layer positioned on the innermost side when viewed from the light irradiation surface contains indium oxide and tin oxide. The recording layer provided in the information signal layer positioned on the innermost side when viewed from the light irradiation surface contains an oxide of a metal MA, an oxide of a metal MB, an oxide of a metal MD, and an oxide of a metal ME, the metal MA is at least one selected from the group consisting of Mn and Ni, the metal MB is at least one selected from the group consisting of W, Mo, Zr and Ta, the metal MD is at least one selected from the group consisting of Cu and Ag, the metal ME is Nb, the contents of the metal MA, the metal MB and the metal ME satisfy the relationship of 0.30≤a.sub.1/(b.sub.1+e.sub.1)≤0.41 (where, a.sub.1: atomic ratio [atomic %] of the metal MA with respect to a total amount of the metal MA, the metal MB, the metal MD and the metal ME, b.sub.1: atomic ratio [atomic %] of the metal MB with respect to a total amount of the metal MA, the metal MB, the metal MD and the metal ME, and e.sub.1: atomic ratio [atomic %] of the metal ME with respect to a total amount of the metal MA, the metal MB, the metal MD and the metal ME), and the atomic ratio e.sub.1 of the metal ME with respect to a total amount of the metal MA, the metal MB, the metal MD and the metal ME is 5 atomic % or more and 18 atomic % or less.

An optical recording medium includes a plurality of information signal layers. The plurality of information signal layers include a recording layer having a first surface that faces a light irradiation surface and a second surface on the side opposite to the first surface, a first dielectric layer that is provided on the side of the first surface, and a second dielectric layer that is provided on the side of the second surface. The second dielectric layer provided in the information signal layer positioned on the innermost side when viewed from the light irradiation surface contains indium oxide and tin oxide. The recording layer provided in the information signal layer positioned on the innermost side when viewed from the light irradiation surface contains an oxide of a metal MA, an oxide of a metal MB, an oxide of a metal MD, and an oxide of a metal ME, the metal MA is at least one selected from the group consisting of Mn and Ni, the metal MB is at least one selected from the group consisting of W, Mo, Zr and Ta, the metal MD is at least one selected from the group consisting of Cu and Ag, the metal ME is Nb, the contents of the metal MA, the metal MB and the metal ME satisfy the relationship of 0.30≤a.sub.1/(b.sub.1+e.sub.1)≤0.41 (where, a.sub.1: atomic ratio [atomic %] of the metal MA with respect to a total amount of the metal MA, the metal MB, the metal MD and the metal ME, b.sub.1: atomic ratio [atomic %] of the metal MB with respect to a total amount of the metal MA, the metal MB, the metal MD and the metal ME, and e.sub.1: atomic ratio [atomic %] of the metal ME with respect to a total amount of the metal MA, the metal MB, the metal MD and the metal ME), and the atomic ratio e.sub.1 of the metal ME with respect to a total amount of the metal MA, the metal MB, the metal MD and the metal ME is 5 atomic % or more and 18 atomic % or less.