The disclosure includes, in general, among other aspects, an apparatus having multiple programmable units integrated within a processor. The apparatus has circuitry to map addresses in a single address space to resources within the multiple programmable units where the single address space includes addresses for different ones of the resources in different ones of the multiple programmable units and where there is a one-to-one correspondence between respective addresses in the single address space and resources within the multiple programmable units.

The disclosure includes, in general, among other aspects, an apparatus having multiple programmable units integrated within a processor. The apparatus has circuitry to map addresses in a single address space to resources within the multiple programmable units where the single address space includes addresses for different ones of the resources in different ones of the multiple programmable units and where there is a one-to-one correspondence between respective addresses in the single address space and resources within the multiple programmable units.

A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. The memory bank is divided into two halves, where each half is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area typically used for routing wide data buses. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density.

A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. The memory bank is divided into two halves, where each half is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area typically used for routing wide data buses. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density.

Enhanced memory circuits are described that maintain coherency between concurrent memory reads and writes in a pipelined memory architecture. The described memory circuits can maintain data coherency regardless of the amount of pipelining applied to the memory inputs and/or outputs. Moreover, these memory circuits may be implemented as dedicated hard circuits in a field programmable gate array (FPGA) or other programmable logic device (PLD), and can be supplemented with user-configurable logic to achieve coherency in a variety of applications.

A memory device for outputting data, and a method of operating the same, includes a cache latch group including a plurality of cache latches that are sequentially arranged, wherein a plurality of odd cache latches and a plurality of even cache latches that are included in the plurality of cache latches are alternately arranged. The memory device also includes a sense amplifier configured to be coupled to the plurality of odd cache latches through a first bit output line group and coupled to the plurality of even cache latches through a second bit output line group, alternately. The memory device additionally includes a bit output line selection circuit configured to alternately couple the sense amplifier to the first bit output line group and the second bit output line group in response to a bit output line selection signal.

A semiconductor memory device according to the present disclosure includes a memory cell array (110, 210), an input/output circuit (23) that inputs/outputs a signal from/to the memory cell array, and a temperature acquiring circuit (29) that generates temperature information according to the temperature of the memory cell array, and corrects the characteristics of the input/output circuit based on the temperature information.