A stacked memory includes a volatile memory die and a non-volatile memory die that are stacked together. The non-volatile memory die includes a non-volatile storage array and a peripheral circuit. The peripheral circuit includes a power integrity circuit and a signal integrity circuit. The power integrity circuit is configured to perform power integrity optimization on a power supply obtained from a lower-layer die and then transmit the power supply to an upper-layer die. The signal integrity circuit is configured to perform signal integrity optimization on a signal obtained from a lower-layer die and then transmit the signal to an upper-layer die.

Technology for limiting a voltage difference between two selected conductive lines in a cross-point array when using a forced current approach is disclosed. In one aspect, the selected word line voltage is clamped to a voltage limit while driving an access current through a region of the selected word line and through a region of the selected bit line. The access current flows through the memory cell to allow a sufficient voltage to successfully read or write the memory cell, while not placing undue stress on the memory cell. In some aspects, the maximum voltage that is permitted on the selected word line depends on the location of the selected memory cell in the cross-point memory array. This allows memory cells for which there is a larger IR drop to receive an adequate voltage, while not over-stressing memory cells for which there is a smaller IR drop.

The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.

Embodiments of this application provide a storage component, a preparation method, a reading/writing method, a storage chip, and an electronic device, is related to the storage technology field, and is used to resolve a problem that a quantity of storage states of a spin orbit torque-magnetic random access memory is increased while a storage state change range remains unchanged. The storage component includes: a first magnetic tunnel junction, a spin orbit coupling layer and a second magnetic tunnel junction that are sequentially arranged in a stacked manner. The first magnetic tunnel junction includes a first free layer, and the second magnetic tunnel junction includes a second free layer. The first free layer and the second free layer are arranged on two opposite surfaces of the spin orbit coupling layer.

A device includes a Magnetic Tunnel Junction (MTJ) memory element comprising, a reference layer, a free layer, and a magnetic tunneling layer between the reference layer and the free layer; and a pair of magneto-electric controlling layers, which have in-plane uniaxial anisotropy, wherein the pair of magneto-electric controlling layers are disposed below the free layer.

Disclosed herein are related to a memory cell including magnetic tunneling junction (MTJ) devices. In one aspect, the memory cell includes a first layer including a first transistor and a second transistor. In one aspect, the first transistor and the second transistor are connected to each other in a cross-coupled configuration. A first drain structure of the first transistor may be electrically coupled to a first gate structure of the second transistor, and a second drain structure of the second transistor may be electrically coupled to a second gate structure of the first transistor. In one aspect, the memory cell includes a second layer including a first MTJ device electrically coupled to the first drain structure of the first transistor and a second MTJ device electrically coupled to the second drain structure of the second transistor. In one aspect, the second layer is above the first layer.

Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

A magnetic recording array according to the present embodiment includes a plurality of spin elements, a first reference cell, and a second reference cell, wherein the plurality of spin elements, the first reference cell, and the second reference cell each have a wiring and a stacked body including a first ferromagnetic layer stacked on the wiring, wherein the electrical resistance of the wiring of the first reference cell is higher than the electrical resistance of the wiring of each spin element, and wherein the electrical resistance of the wiring of the second reference cell is lower than the electrical resistance of the wiring of each spin element.

Various embodiments of the present application are directed towards a memory cell, an integrated chip comprising a memory cell, and a method of operating a memory device. In some embodiments, the memory cell comprises a data-storage element having a variable resistance and a unipolar selector electrically coupled in series with the data-storage element. The memory cell is configured to be written by a writing voltage with a single polarity applying across the data-storage element and the unipolar selector.

A memory device includes a well, a poly layer, a dielectric layer, an alignment layer and an active area. The poly layer is formed above the well. The dielectric layer is formed above the poly layer. The alignment layer is formed on the dielectric layer, used to receive an alignment layer voltage and substantially aligned with the dielectric layer in a projection direction. The active area is formed on the well. The dielectric layer is thicker than the alignment layer. A first overlap area of the poly layer and the active area is smaller than a second overlap area of the poly layer and the dielectric layer excluding the first overlap area.