The present disclosure provides a data reading circuit and a storage unit. The data reading circuit includes a being read unit connected to a voltage stabilizing unit and configured to store data. The voltage stabilizing unit is configured to stabilize and output a current from the being read unit to a first amplifying unit. The first amplifying unit is configured to amplify and output the current from the being read unit to a comparing unit. A reference unit is connected to a second amplifying unit, to output a reference current to the second amplifying unit. The second amplifying unit is configured to amplify and output the reference current to the comparing unit. The comparing unit is configured to compare a comparing point voltage, that is based on the amplified current of the being read unit and the amplified reference current, with a reference voltage and to output comparison results.

A magnetic memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack includes a reference layer, a tunnel barrier layer, a free layer, and a magnetoelectric multiferroic layer including at least one crystalline grain. The magnetization of the magnetoelectric multiferroic layer may be axial, canted, or in-plane. For axial or canted magnetization of the magnetoelectric multiferroic layer, a deterministic switching of the free layer may be achieved through coupling with the axial component of magnetization of the magnetoelectric multiferroic layer. Alternatively, the in-plane magnetization of the magnetoelectric multiferroic layer may be employed to induce precession of the magnetization angle of the free layer.

A memory includes virtual ground circuitry configured to generate a virtual ground voltage (greater than zero volts) at a virtual ground node, a memory array of resistive memory cells in which each resistive memory cell includes a select transistor and a resistive storage element and is coupled to a first column line of a plurality of first column lines, and a first decoder configured to select a set of first column lines for a memory read operation from a selected set of the resistive memory cells. The memory includes read circuitry, and a first column line multiplexer configured to couple each selected first column line of the set of first column lines to the read circuitry during the memory read operation, and configured to couple each unselected first column line of the plurality of first column lines to the virtual ground node during the memory read operation.

A magnetic memory device is provided. The magnetic memory device includes a spin orbit torque (SOT) source configured to generate SOT, and a magnetic fine wire of which one end contacts a main surface of the SOT source. A direction of SOT generated by the SOT source is perpendicular to a direction in which the magnetic fine wire extends, and a magnetic domain in the magnetic fine wire is parallel to the direction in which the magnetic fine wire extends.

In a memory, a first node holds first data from a first cell. A second node holds second data from a second cell near the first cell. A differential circuit includes a first current path passing a first current corresponding to a voltage of the first node and a second current path passing a second current corresponding to a voltage of the second node, and outputs an output signal corresponding to a voltage difference between the first and the second nodes from an output part. A first register latches the output signal and output the signal as a hold signal. A first offset part is connected to the first current path and offsets the first current when the hold signal has a first logic level. A second offset part is connected to the second current path and offsets the second current when the hold signal has a second logic level.

A write voltage generator is connected with a magnetoresistive random access memory. The write voltage generator provides a write voltage during a write operation. A storage state of a selected memory cell in a write path of the magnetoresistive random access memory is changed in response to the write voltage. The write voltage generator includes a temperature compensation circuit and a process corner compensation circuit. The temperature compensation circuit generates a transition voltage according to an ambient temperature. The transition voltage decreases with the increasing ambient temperature. The process corner compensation circuit receives the transition voltage and generates the write voltage.

A non-volatile memory includes virtual ground circuitry configured to generate a virtual ground voltage at a virtual ground node, a memory array of memory cells in which each memory cell includes a select transistor and a storage element and is coupled to a first column line of a plurality of first column lines; and a first decoder configured to select a set of first column lines for a memory write operation to a selected set of the memory cells. The non-volatile memory also includes write circuitry configured to receive a write value for storage into the selected set of memory cells, and a first column line multiplexer configured to, during the memory write operation, couple each selected first column line of the set of first column lines to the write circuitry, and couple each unselected first column line of the plurality of first column lines to the virtual ground node.

According to one embodiment, a magnetic storage device includes a magnetoresistive element having a first end and a second end. A first switch is between the first end and a first wiring. A second switch is between the second end and a second wiring. A third switch is between the first end and a third wiring. A fourth switch is between the second end and a fourth wiring. A driver is connected to the first wiring and the second wiring and is configured to supply, to the first wiring, a current at a magnitude set based on a voltage at the first end and a voltage at the second end.

A non-volatile memory includes virtual ground circuitry configured to generate a virtual ground voltage at a virtual ground node, a memory array of memory cells in which each memory cell includes a select transistor and a storage element and is coupled to a first column line of a plurality of first column lines; and a first decoder configured to select a set of first column lines for a memory write operation to a selected set of the memory cells. The non-volatile memory also includes write circuitry configured to receive a write value for storage into the selected set of memory cells, and a first column line multiplexer configured to, during the memory write operation, couple each selected first column line of the set of first column lines to the write circuitry, and couple each unselected first column line of the plurality of first column lines to the virtual ground node.

In some examples, a subword driver block of a memory device includes a plurality of active regions of a first type and a plurality of active regions of a second type adjacent to the plurality of active regions of the first type. The subword driver block further includes a plurality of first gate electrodes overlapping with the plurality of active regions of the first type to form a plurality of first transistors, and a plurality of second gate electrodes overlapping with the plurality of active regions of the first type to form a plurality of second transistors. Each of the second transistors is shared by a first subword driver and a second subword driver. Each of the second transistors may include a drain and a source respectively coupled to a first and second word line, which are driven by the first subword driver and the second subword driver, respectively.