Methods, systems, and devices for power-efficient generation of voltage are described. A driver circuit in a memory device may produce a voltage on an output node for other components in the memory device to use. To produce the voltage, the driver circuit may use a first voltage supply to charge the output node to a first threshold voltage level. The driver may then use a second voltage source to charge the output node to a second threshold voltage level that is different than (e.g., higher than) the first threshold voltage level.

Methods, systems, and devices for differential amplifier schemes for non-switching state compensation are described. During a read operation, a first node of a memory cell may be coupled with an input of differential amplifier while a second node of the memory cell may be biased with a first voltage (e.g., to apply a first read voltage across the memory cell). The second node of the memory cell may subsequently be biased with a second voltage (e.g., to apply a second read voltage across the memory cell), which may support the differential amplifier operating in a manner that compensates for a non-switching state of the memory cell. By compensating for a non-switching state of a memory cell during read operations, read margins may be increased.

Methods, systems, and devices for sensing techniques for differential memory cells are described. A method may include selecting a pair of memory cells that comprise a first memory cell coupled with a first digit line and a second memory cell coupled with a second digit line for a read operation, the pair of memory cells storing one bit of information. The method may further include applying a first voltage to a plate line coupled with the first memory cell and the second memory cell and applying a second voltage to a select line to couple the first digit line and the second digit line with a sense amplifier. The amplifier may sense a logic state of the pair of memory cells based on a difference between a third voltage of the first digit line and a fourth voltage of the second digit line.

Methods, systems, and devices for cell data bulk reset are described. In some examples, a logic state (e.g., a first logic state) may be written to one or more memory cells based on an associated memory device transitioning power states. To write the first logic state to the memory cells, a first subset of digit lines may be driven to a first voltage and a plate may be driven to a second voltage. While the digit lines and plate are driven to the respective voltages, one or more word lines may be driven to the second voltage. In some instances, the word lines may be driven to the second voltage based on charge sharing occurring between adjacent word lines.

Methods, systems, and devices for cell data bulk reset are described. In some examples, a write pulse may be applied to one or more memory cells based on an associated memory device transitioning power states. To apply the wire pulse, a first subset of digit lines may be driven to a first voltage and a plate may be driven to a second voltage or a third voltage. While the digit lines and plate are driven to the respective voltages, one or more word lines may be driven to the second voltage or the third voltage. In some instances, the digit lines may be selected (e.g., driven) according to a pattern.

Methods, systems, and apparatuses for self-referencing sensing schemes are described. A cell having two transistors, or other switching components, and one capacitor, such as a ferroelectric capacitor, may be sensed using a reference value that is specific to the cell. The cell may be read and sampled via one access line, and the cell may be used to generate a reference voltage and sampled via another access line. For instance, a first access line of a cell may be connected to one read voltage while a second access line of the cell is isolated from a voltage source; then the second access line may be connected to another read voltage while the first access line is isolate from a voltage source. The resulting voltages on the respective access lines may be compared to each other and a logic value of the cell determined from the comparison.

Systems and methods for confirming the presence of a person or asset for a given purpose, and recording this information in a distributed ledger. The distributed ledger records and confirms presence indicia in connection with a transaction said facilitates remote and/or automated signatures. The systems and methods detect the presence of one or more humans and/or computing devices at a specific location at the time of a transaction, and contemporaneously recording information concerning the transaction in a distributed ledger. Presence can be determined using network presence sensing (NPS), other types of sensors, or the combination of NPS with other sensors.

A high-voltage power supply system including a high-voltage regulator, a function generator, and a triggering circuit. The high-voltage regulator includes a microcontroller, a digital-to-analog convertor in communication with the microcontroller, and a high-voltage DC-DC converter in communication with the digital-to-analog converter. The function generator includes a high-voltage inverter including one or more MOSFET switches. The high-voltage inverter is in communication with the microcontroller of the high-voltage regulator. The triggering circuit includes one or more high-voltage electromechanical switches.

An illustrative embodiment disclosed herein is an apparatus including a non-volatile memory cell and multi-bit input circuitry that simultaneously receives a plurality of bits, receives a supply voltage, converts the plurality of bits and the supply voltage into a multiply voltage, and applies the multiply voltage to the non-volatile memory cell. The non-volatile memory cell may pass a memory cell current in response to the multiply voltage. A magnitude of the multiply voltage may represent a multiplier. The memory cell current may represent a product of the multiplier and a multiplicand stored in the non-volatile memory cell.

Exemplary embodiments provide a sensing amplifier based flip-flop applying a nonvolatile memory device which is applicable to a mobile device which has a small hardware area, uses a small control signal, does not include a separate write circuit, has low writing power consumption, a short reading time and small power consumption, and requires a low power operation.