A memory system includes a memory track including a plurality of magnetic domains having alternating magnetic polarities and positioned along a path, and a plurality of domain walls separating adjacent ones of the plurality of magnetic domains, each one of the domain walls being configured to store data.

A magnetic storage device includes a magnetic body including first and second magnetic regions and a magnetic connection region that connects the first and second magnetic regions, and in which a plurality of magnetic domains each storing information by a magnetization direction thereof is formed, a read element that is electrically connected to the magnetic connection region and by which a magnetization direction of one of the magnetic domains is read, and a write element by which a magnetic domain having a magnetization direction is formed in the magnetic body according to information to be stored. The magnetic domains formed in each of the first and second magnetic regions are shifted in a predetermined direction in response to current that flows through the corresponding one of the first and second magnetic regions.

A memory system includes a memory track including a plurality of magnetic domains having alternating magnetic polarities and positioned along a path, and a plurality of domain walls separating adjacent ones of the plurality of magnetic domains, each one of the domain walls being configured to store data.

According to an embodiment, a magnetic storage device includes a memory unit, a current supply circuit, a switch, and a controller. The memory unit includes a magnetic member and a switch element. The switch element is connected in series to the magnetic member, and changes to an on state in a case where a voltage equal to or larger than a predetermined value is applied in an off state. The current supply circuit supplies a current to the memory unit. The switch electrically connects or disconnects the current supply circuit and the memory unit. The controller applies a voltage for changing the switch element from the off state to the on state to the memory unit with the switch in a disconnected state, and sets the switch to be in a connected state after the switch element changes to the on state.

According to one embodiment, there is provided a magnetic memory including a magnetic material column, a shift control circuit, and a write control circuit. The shift control circuit is connected to the magnetic material column. The write control circuit is configured to cause a current to flow through a write line passing near one end of the magnetic material column if writing data having a first value into the magnetic material column, and cause no current to flow through the write line if writing data having a second value into the magnetic material column.

According to an embodiment, a magnetic storage device includes a memory unit, a current supply circuit, a switch, and a controller. The memory unit includes a magnetic member and a switch element. The switch element is connected in series to the magnetic member, and changes to an on state in a case where a voltage equal to or larger than a predetermined value is applied in an off state. The current supply circuit supplies a current to the memory unit. The switch electrically connects or disconnects the current supply circuit and the memory unit. The controller applies a voltage for changing the switch element from the off state to the on state to the memory unit with the switch in a disconnected state, and sets the switch to be in a connected state after the switch element changes to the on state.

According to one embodiment, there is provided a magnetic memory including a magnetic material column, a shift control circuit, and a write control circuit. The shift control circuit is connected to the magnetic material column. The write control circuit is configured to cause a current to flow through a write line passing near one end of the magnetic material column if writing data having a first value into the magnetic material column, and cause no current to flow through the write if writing data having a second value into the magnetic material column.

A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.

According to the embodiment, a magnetic memory device includes a magnetic body. The magnetic body includes first and second extending regions, and a first connecting region. The first extending region spreads along a first direction and along a second direction crossing the first direction, and includes first and second end portions extending in the first direction. The second end portion is separated from the first end portion in the second direction. The second extending region spreads along the first direction and along a third direction crossing the first direction, and includes third and fourth end portions extending in the first direction. The fourth end portion is separated from the third end portion in the third direction. The first connecting region is provided between the first and third end portions, and connects the first end portion with the third end portion.

A method of controlling a magnetization state using an imprinting technique may be provided. The method may include moving first and second magnetic structures, which have different magnetization states, toward each other and changing a magnetization state of the first or second magnetic structure, when a distance between the first and second magnetic structures is reduced. A magnetic field, which is produced by a magnetization state of one of the first and second magnetic structures, may be used to align a magnetization state of the other, when the magnetization state of the first or second magnetic structure is changed.