A magnetic memory device includes a first magnetic layer extending in a first direction, a pinned layer on the first magnetic layer, and a second magnetic layer vertically overlapping with the pinned layer with the first magnetic layer interposed between the pinned layer and the second magnetic layer. The first magnetic layer includes, a plurality of magnetic domains arranged in the first direction, and at least one magnetic domain wall between the plurality of magnetic domains, and a magnetization direction of the second magnetic layer is substantially parallel to a top surface of the first magnetic layer.

According to one embodiment, a memory system includes a shift register memory and a controller. The shift register memory includes data storing shift strings. The controller changes a shift pulse, which is to be applied to the data storing shift strings from which first data is read by applying a first shift pulse, to a second shift pulse to write second data to the data storing shift strings and to read the second data from the data storing shift strings. The controller creates likelihood information of data read from the data storing shift strings in accordance with a read result of the second data. The controller performs soft decision decoding for the first data using the likelihood information.

According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.

A magnetic memory device includes a reading unit on a substrate, a magnetic track layer on the reading unit, the magnetic track layer including a bottom portion between first and second sidewall portions, and a mold structure on the bottom portion of the magnetic track layer, and between the first and second sidewall portions. The mold structure includes first and second mold layers alternately arranged in a first direction perpendicular to a top surface of the substrate, and the magnetic track layer includes magnetic domains and magnetic domain walls between magnetic domains, the first and second sidewall portions of the magnetic track layer including sidewall notches corresponding to the magnetic domain walls, and the bottom portion includes a bottom notch corresponding to one of the magnetic domain walls.

According to one embodiment, a device includes a member including a first portion having a first dimension in first direction, a second portion spaced from the first portion and having a second dimension in the first direction, a third portion between the first and second portions and having a third dimension in the first direction, and a fourth portion between the first and third portions and having a fourth dimension in the first direction; and a circuit to supply a shift pulse including first and second pulses to the member and move a domain wall in the member. The third dimension is less than the first dimension. The second and fourth dimensions are less than the third dimension. A second value of the second pulse is less than a first value of the first pulse.

A magnetic memory according to an embodiment includes: a magnetic member having a cylindrical form, the magnetic member including a first end portion and a second end portion and extending in a first direction from the first end portion to the second end portion, the first end portion having an end face, which includes a face inclined with respect to a plane perpendicular to the first direction.

A magnetic storage device includes a magnetic body including first and second magnetic regions and a magnetic connection region that connects the first and second magnetic regions, and in which a plurality of magnetic domains each storing information by a magnetization direction thereof is formed, a read element that is electrically connected to the magnetic connection region and by which a magnetization direction of one of the magnetic domains is read, and a write element by which a magnetic domain having a magnetization direction is formed in the magnetic body according to information to be stored. The magnetic domains formed in each of the first and second magnetic regions are shifted in a predetermined direction in response to current that flows through the corresponding one of the first and second magnetic regions.

A new class of logic gates are presented that use non-linear polar material. The logic gates include multi-input majority gates and threshold gates. Input signals in the form of analog, digital, or combination of them are driven to first terminals of non-ferroelectric capacitors. The second terminals of the non-ferroelectric capacitors are coupled to form a majority node. Majority function of the input signals occurs on this node. The majority node is then coupled to a first terminal of a capacitor comprising non-linear polar material. The second terminal of the capacitor provides the output of the logic gate, which can be driven by any suitable logic gate such as a buffer, inverter, NAND gate, NOR gate, etc. Any suitable logic or analog circuit can drive the output and inputs of the majority logic gate. As such, the majority gate of various embodiments can be combined with existing transistor technologies.

A photonic spin register includes: a shift register unit including a magnetic material layer having a shape extending in one direction; and a write unit configured to write spin information into a magnetic domain in the magnetic material layer by transferring information included in an optical signal that is a pulse amplitude-modulated and serial input signal, to a spin state of the magnetic domain in the magnetic material layer by means of a photocurrent corresponding to the optical signal or by irradiation with the optical signal. When a shift current flows through the shift register unit in the one direction, a domain wall is configured to move in the magnetic material layer, thereby allowing the spin information to move and be buffered in the magnetic material layer.

A spin-based logic architecture provides nonvolatile data retention, near-zero leakage, and scalability. The architecture based on magnetic domain-walls take advantage of fast domain-wall motion, high density, non-volatility, and flexible design in order to process and store information. There is disclosed a concept to perform all-electric logic operations and cascading in domain-wall racetracks. The novel system exploits chiral coupling between neighboring magnetic domains induced by the interfacial Dzyaloshinskii-Moriya interaction to realize a domain-wall inverter. There are described reconfigurable NAND and NOR logic gates that perform operations with current-induced domain-wall motion. Several NAND gates are cascaded to build XOR and full adder gates, demonstrating electrical control of magnetic data and device interconnection in logic circuits. The novel system provides a viable platform for scalable all-electric magnetic logic and paves the way for memory-in-logic applications.