Methods, devices, and systems related to memory device on-die ECC data are described. In an example, a scrub operation can be performed on data in order to determine which rows of memory cells in an array include a particular number of errors. The particular number of errors can be a number of errors that exceed a threshold number of errors. An address of the determined rows with the particular number of errors can be stored in memory cells of the array for later access. The address of the determined rows can be accessed to perform a user-initiated repair operation, a self-repair operation, a refresh operation, and/or to alter timing of access of the cells or alter voltage of the cells.

Methods, systems, and devices for link evaluation for a memory device are described. A memory device may receive signaling over a channel and may identify logic values encoded into the signaling based on sampling the signaling against a reference voltage. The sampling may occur at a reference time within a sampling period. To evaluate a quality (e.g., margin of error) of the channel, the memory device may adjust the reference voltage, the reference time, or both, and either the memory device or the host device may determine whether the memory device is still able to correctly identify logic values encoded into signaling over the channel. In some cases, the channel quality may be evaluated during a refresh cycle or at another opportunistic time for the memory device.

Techniques for repair of a memory die are disclosed. In the illustrative embodiment, a faulty wordline (or bitline) can be remapped to a redundant wordline on the same layer by entering the address of the faulty wordline in a repair table for the layer. If there are more faulty wordlines on a layer than redundant wordlines available on the layer, the faulty wordlines can be remapped to redundant wordlines on a different layer, and the address of the faulty wordline can be placed in a repair table for the different layer. When a memory operation is received, the wordline address for the memory operation is checked against the repair tables to check if it remapped.

Techniques for repair of a memory die are disclosed. In the illustrative embodiment, a faulty wordline (or bitline) can be remapped to a redundant wordline on the same layer by entering the address of the faulty wordline in a repair table for the layer. If there are more faulty wordlines on a layer than redundant wordlines available on the layer, the faulty wordlines can be remapped to redundant wordlines on a different layer, and the address of the faulty wordline can be placed in a repair table for the different layer. When a memory operation is received, the wordline address for the memory operation is checked against the repair tables to check if it remapped.

A three-dimensional stacked integrated circuit (3D SIC) that can have at least a first 3D XPoint (3DXP) die and, in some examples, can have at least a second 3DXP die too. In such examples, the first 3DXP die and the second 3DXP die can be stacked. The 3D SIC can be partitioned into a plurality of columns that are perpendicular to each of the stacked dies. In such examples, when a first column of the plurality of columns is determined as failing, data stored in the first column can be replicated to a second column of the plurality of columns. Also, for example, when a part of a first column of the plurality of columns is determined as failing, data stored in the part of the first column can be replicated to a corresponding part of a second column of the plurality of columns.

An integrated memory assembly comprises a memory die and a control die bonded to the memory die. The memory die includes a memory structure of non-volatile memory cells. The control die is configured to program user data to and read user data from the memory die based on one or more operational parameters. The control die is configured to calibrate the one or more operational parameters for the memory die. The control die is also configured to perform testing of the memory die using the calibrated one or more operational parameters.

An integrated memory assembly comprises a memory die and a control die bonded to the memory die. The memory die includes a memory structure of non-volatile memory cells. The control die is configured to program user data to and read user data from the memory die based on one or more operational parameters. The control die is configured to calibrate the one or more operational parameters for the memory die. The control die is also configured to perform testing of the memory die using the calibrated one or more operational parameters.

A semiconductor device includes a test command generation circuit that generates a test write command and a test read command when entering a test mode, and an input/output control circuit that controls a memory block, the memory block including a plurality of banks such that write operations are simultaneously performed on the plurality of banks based on the test write command and read operations are simultaneously performed on the plurality of banks based on the test read command.

Disclosed herein is an apparatus that includes a data terminal, a memory cell array, a mode register storing a plurality of operation parameters, and an output circuit configured to output, in response to a read command, an incorrect data to the data terminal instead of a correct data read from the memory cell array when a predetermined one of the operation parameters indicates a test mode.

Disclosed herein is an apparatus that includes a data terminal, a memory cell array, a mode register storing a plurality of operation parameters, and an output circuit configured to output, in response to a read command, an incorrect data to the data terminal instead of a correct data read from the memory cell array when a predetermined one of the operation parameters indicates a test mode.