A system includes a memory array of sub-blocks, each sub-block including groups of memory cells, and a processing device. The processing device causes a first wordline to be programmed through the sub-blocks with a mask by causing to be programmed, to a first voltage level: a first group of memory cells of a first sub-block; and a second group of memory cells of a second sub-block. The processing device further scans a second wordline that has been programmed and is coupled to the first wordline, scanning includes: causing a custom wordline voltage to be applied to the second wordline, the custom wordline voltage to select groups of memory cells corresponding to those of the first wordline programmed to the first voltage level; concurrently reading data from the selected groups of memory cells of the second wordline; and performing, using the data, an error check of the second wordline.

A semiconductor chip with error detection and correction includes multiple pipes and each pipe is coupled to one or more ports on the semiconductor chip. The semiconductor chip further includes a state machine coupled to the pipes to generate a number of events consisting of read- and/or scan-type events associated with a plurality of storage elements. The state machine is implemented in hardware and can centrally detect and correct erroneous memory entries across the plurality of storage elements.

Disclosed herein is an apparatus that includes a fuse array circuit including a plurality of fuse sets each assigned to a corresponding one of a plurality of fuse addresses and configured to operatively store a fuse data, and a first circuit configured to generate and sequentially update a fuse address to sequentially read the fuse data from the plurality of fuse sets. The first circuit is configured to change a frequency of updating the fuse address based on a first signal.

A method and a device for testing a memory chip, a computer-readable storage medium and an electronic device are provided. The method for testing a memory chip includes the following operations. Test data is written into memory cells of the memory chip based on a target write time of the memory chip. Memory data is read from the memory cell based on a target read time of the memory chip (S110). A test result of the memory chip is determined based on the test data and the memory data (S120). The test data includes multiple different binary sequences, only one of data bits in each binary sequence is 1, the target write time is less than a standard write time of the memory chip, and the target read time is less than a standard read time of the memory chip.

A method and a device for testing a memory chip, a computer-readable storage medium and an electronic device are provided. The method for testing a memory chip includes the following operations. Test data is written into memory cells of the memory chip based on a target write time of the memory chip. Memory data is read from the memory cell based on a target read time of the memory chip (S110). A test result of the memory chip is determined based on the test data and the memory data (S120). The test data includes multiple different binary sequences, only one of data bits in each binary sequence is 1, the target write time is less than a standard write time of the memory chip, and the target read time is less than a standard read time of the memory chip.

Methods, systems, and devices for speculative memory section selection are described. Defective memory components in one memory section may be repaired using repair components in another memory section. Speculative selection of memory sections may be enabled, whereby access lines in multiple memory sections may be selected when a memory command indicating an address in one memory section is received. While the access lines in the multiple memory sections are selected, a determination of whether repair components in another memory section are to be accessed is performed. Based on the determination, the access line in one of the memory sections may be maintained and the access lines in the other memory sections may be deselected.

A memory system includes a non-volatile memory having a plurality of memory cells and a controller. The controller is configured to switch a mode for controlling an access operation to the non-volatile memory from a first mode to a second mode, in response to receiving from a host, a first command for instructing the controller to switch the mode from the first mode to the second mode. The access operation controlled according to the second mode improves data retention relative to the access operation controlled according to the first mode.

A memory system includes a non-volatile memory having a plurality of memory cells and a controller. The controller is configured to switch a mode for controlling an access operation to the non-volatile memory from a first mode to a second mode, in response to receiving from a host, a first command for instructing the controller to switch the mode from the first mode to the second mode. The access operation controlled according to the second mode improves data retention relative to the access operation controlled according to the first mode.

Several embodiments of systems incorporating memory sub-systems are disclosed herein. In one embodiment, a memory sub-system can include a memory component and a processing device configured to perform a background scan on a memory region of the memory component. In some embodiments, the background scan includes generating a bit error count (BEC) of a codeword saved on the memory region and saving statistical information corresponding to the BEC of the codeword to a histogram statistics log. In some embodiments, when the BEC of the codeword is greater than a BEC threshold, a refresh operation is scheduled for the memory region and/or logged. In these and other embodiments, when one or more error recovery error correction code (ECC) operations do not correct bit errors in the codeword, a refresh and/or retirement operation is schedule for the memory region and/or is logged.

An information processing apparatus includes a detection unit and first and second classification units. The detection unit detects an event which causes a state of at least one bank constituting dynamic random access memory (DRAM) to transition. The first classification unit classifies the at least one bank state based on the detected event. The second classification unit classifies a DRAM state based on the at least one bank state. Statistical information that is based on the at least one bank or DRAM state is displayed with respect to a predetermined unit time. The at least one bank state and the DRAM state each includes at least one of the following: an operating state, in which data is being transferred, an inoperative state, in which data transfer is not possible due to a predetermined constraint, or a pause state, in which, although there is no constraint, data is not being transferred.