An apparatus includes a substrate; circuit components disposed on the substrate; and a location identifier layer over the circuit, wherein the location identifier layer includes one or more section labels for representing physical locations of the circuit components within the apparatus.

Disclosed in some examples are NAND devices, firmware, systems, methods, and devices that apply smart algorithms to process ECC errors by taking advantage of excess overprovisioning. In some examples, when the amount of overprovisioned blocks are above a predetermined threshold, a first ECC block error handling mode may be implemented and when the overprovisioned blocks are equal or less than the predetermined threshold, a second mode of ECC block error handling may be utilized.

Disclosed in some examples are NAND devices, firmware, systems, methods, and devices that apply smart algorithms to process ECC errors by taking advantage of excess overprovisioning. In some examples, when the amount of overprovisioned blocks are above a predetermined threshold, a first ECC block error handling mode may be implemented and when the overprovisioned blocks are equal or less than the predetermined threshold, a second mode of ECC block error handling may be utilized.

A caching system including a first sub-cache and a second sub-cache in parallel with the first sub-cache, wherein the second sub-cache includes a set of cache lines, line type bits configured to store an indication that a corresponding cache line of the set of cache lines is configured to store write-miss data, and an eviction controller configured to flush stored write-miss data based on the line type bits.

A caching system including a first sub-cache and a second sub-cache in parallel with the first sub-cache, wherein the second sub-cache includes a set of cache lines, line type bits configured to store an indication that a corresponding cache line of the set of cache lines is configured to store write-miss data, and an eviction controller configured to flush stored write-miss data based on the line type bits.

Methods, apparatuses and systems related to managing repair assets are described. An apparatus stores a repair segment locator and a repair address for each defect repair. The apparatus may be configured to selectively apply a repair asset to one of multiple sections according to the repair segment locator.

Methods, apparatuses and systems related to managing repair assets are described. An apparatus stores a repair segment locator and a repair address for each defect repair. The apparatus may be configured to selectively apply a repair asset to one of multiple sections according to the repair segment locator.

A method for the secured storing of a data element of a predefined data type to be stored by a computer program in an external memory, which is connected to a microcontroller, an error correction value of one error correction value data type being used. The method includes, when creating the computer program: defining a composite data element that includes one element of the data type and one element of the error correction value data type, in the computer program; and when executing the computer program: calculating the error correction value for the data element to be stored; forming an error correction data element as the composite data element, which contains the data element to be stored and the associated error correction value, which has been calculated for the data element; and writing the error correction data element to a memory address for the error correction data element.

A method for the secured storing of a data element of a predefined data type to be stored by a computer program in an external memory, which is connected to a microcontroller, an error correction value of one error correction value data type being used. The method includes, when creating the computer program: defining a composite data element that includes one element of the data type and one element of the error correction value data type, in the computer program; and when executing the computer program: calculating the error correction value for the data element to be stored; forming an error correction data element as the composite data element, which contains the data element to be stored and the associated error correction value, which has been calculated for the data element; and writing the error correction data element to a memory address for the error correction data element.

A system includes a memory device having a plurality of groups of memory cells and a processing device communicatively coupled to the memory device. The processing device is be configured to read a first group of memory cells of the plurality to determine a calibrated read voltage associated with the group of memory cells. The processing device is further configured to determine, using the calibrated read voltage associated with the first group of memory cells, a bit error rate (BER) of a second group of memory cells of the plurality. Prior to causing the memory device to perform a copyback operation on the plurality of groups of memory cells, the processing device is further configured to determine whether to perform a subsequent read voltage calibration on at least the second group of the plurality based, at least partially, on a comparison between the determined BER and a threshold BER.