Disclosed herein is an apparatus that includes a data terminal, a memory cell array, a mode register storing a plurality of operation parameters, and an output circuit configured to output, in response to a read command, an incorrect data to the data terminal instead of a correct data read from the memory cell array when a predetermined one of the operation parameters indicates a test mode.

A memory test method includes: testing a first memory to acquire defect information of the first memory; acquiring repair information of the first memory according to the defect information of the first memory; and storing the repair information of the first memory in a second memory. In the technical solutions provided in the embodiments of the present disclosure, other memories may be used to store the repair information of the currently tested memory, so that the storage space can be increased and the test efficiency can be improved.

A memory test method includes: testing a first memory to acquire defect information of the first memory; acquiring repair information of the first memory according to the defect information of the first memory; and storing the repair information of the first memory in a second memory. In the technical solutions provided in the embodiments of the present disclosure, other memories may be used to store the repair information of the currently tested memory, so that the storage space can be increased and the test efficiency can be improved.

A memory system includes a semiconductor storage device and a memory controller including a storage circuit that stores correction value for read voltages in association with the word line, and a control circuit that reads data from the memory cells, performs a correction operation on the read data to determine a number of error bits therein, determines the correction value for each read voltage based on the number of error bits and a ratio of a lower tail fail bit count and an upper tail fail bit count, and stores the correction values for the read voltages in the storage circuit. The lower tail fail bit count represents the number of memory cells in a first state having threshold voltages of an adjacent state, and the upper tail fail bit count represents the number of memory cells in the adjacent state having threshold voltages of the first state.

The present disclosure is directed to placement of samples of a read sample offset operation in a memory sub-system. A processing device determines a shape of a valley to be subject to a read sample offset operation, where the valley corresponds to at least one programming distribution of a memory sub-system. The processing device selects a sampling rule from a set of sampling rules based on the shape of the valley. The processing device executes the read sample offset operation in accordance with the sampling rule.

An apparatus includes a controller adapted to be coupled to memory components in parallel and configured to provide memory address signals and a controller clock signal to the memory components, a memory enable logic circuit coupled to the controller and adapted to be coupled to the memory components in parallel and configured to provide test-enable signals to the memory components. The test-enable signals enable, with the controller clock signal, the memory components to read locally stored memory values. The apparatus includes a multiplexer adapted to be coupled to the memory components in parallel and configured to receive from the memory components memory signals that include the memory values in respective sequences of the memory clock signals, and a pipeline coupled to the multiplexer and the controller and configured to receive the memory values from the multiplexer and send the memory values to a multiple input signature register of the controller.

An apparatus includes a controller adapted to be coupled to memory components in parallel and configured to provide memory address signals and a controller clock signal to the memory components, a memory enable logic circuit coupled to the controller and adapted to be coupled to the memory components in parallel and configured to provide test-enable signals to the memory components. The test-enable signals enable, with the controller clock signal, the memory components to read locally stored memory values. The apparatus includes a multiplexer adapted to be coupled to the memory components in parallel and configured to receive from the memory components memory signals that include the memory values in respective sequences of the memory clock signals, and a pipeline coupled to the multiplexer and the controller and configured to receive the memory values from the multiplexer and send the memory values to a multiple input signature register of the controller.

Runtime memory BIST techniques are described herein. In one example, a system such as an SoC includes logic to schedule runtime testing of the memory that is non-destructive in multiple phases. Running testing of memory in multiple phases includes triggering a memory built-in self-test (BIST) testing of a subset of memory locations in a phase, where the processing logic is to pause access to the memory during the phase. The processing logic can resume access to the memory between testing phases. The next region of the memory can be tested in the phase that follows. This process can continue until the entire memory is tested, without requiring the system to be powered down.

A memory device according to one embodiment includes a memory cell array, bit lines, amplifier units, a controller, and a register. The memory cell array includes a memory cell that stores data nonvolatilely. The bit lines are connected to the memory cell array. The sense amplifier units are connected to the bit lines, respectively. The controller performs a write operation. The register stores status information of the write operation. The memory cell array includes a first storage region specified by a first address. The plurality of sense amplifier modules include a buffer region capable of storing data.

A processing-in-memory (PIM) device includes a multiplication/accumulation (MAC) operator. The MAC operator includes a multiplying block and an adding block. The multiplying block includes a first multiplier and a second multiplier. The first multiplier performs a first multiplying calculation of first half data of first data and first half data of second data. The second multiplier performs a second multiplying calculation of second half data of the first data and second half data of the second data. The adding block performs an adding calculation of first multiplication result data outputted from the first multiplier and second multiplication result data outputted from the second multiplier. The MAC operator receives a test mode signal having a first level to perform a test operation for the multiplying block.