A method for repairing a memory device includes: performing error detection on memory units of the memory device; temporarily storing each of unit addresses of detected error units in registers until the number of the detected error units reaches a first preset number, where the detected error units are damaged memory units, and each of the detected error unit occupies a respective one of the registers, and each of the unit addresses comprises a row address; successively selecting one of the registers as a target register; determining whether a row addresses in the target register exists in a reference storage module, where a repaired row address or an unrepaired row address is stored in the reference storage module; and repairing error units that are not repaired through the row addresses according to a result of the determination.

A data storage device includes: a storage including a plurality of memory blocks; and a controller configured to control a data input/output operation on the storage according to a request from a host device, configure one or more block groups by grouping a preset number of memory blocks among the plurality of memory blocks, configure, as a short block group, a first block group having a first bad block, among the block groups, generate a bit map table based on the position of the first bad block within the short block group, and write data having a preset property to the short block group based on the bit map table.

A memory with a test function and a method thereof. The memory includes a memory array having cells, input buffers divided into even- and odd-numbered groups and output buffers divided into even- and odd-numbered groups; at least two data input pads, respectively providing test data to the cells through the even-numbered and the odd-numbered input buffers; a first and a second logic gates, respectively performing a first logic operation on outputs of the even-numbered and odd-numbered output buffers; a third logic gate, performing a second logic operation on outputs of the first and the second logic gates; and at least one data output pad, coupled to an output of the third logic gate for providing a test result of the cells.

The present technology relates to a semiconductor memory device and a method of operating the semiconductor memory device. The semiconductor memory device includes a memory cell array including a plurality of memory blocks, which are assigned as a plurality of normal blocks, a plurality of first replacement blocks, a plurality of second replacement blocks, a first CAM block, and a second CAM block, a peripheral circuit configured to perform an erase operation and a program operation on the plurality of memory blocks, and a control logic configured to control the peripheral circuit to perform a growing bad block check operation on a target block during the program operation on a selected target block among the normal memory blocks.

A semiconductor memory system includes a memory medium and a data input/output (I/O) pin repair control circuit. The memory medium includes a plurality of memory dies and a spare die. Each of the plurality of memory dies has a plurality of memory regions and a plurality of data I/O pins, and the spare die has a plurality of spare regions and a plurality of data I/O pins. The data I/O pin repair control circuit performs a repair process for replacing an abnormal data I/O pin among the plurality of data I/O pins included in any of the plurality of memory dies with a data I/O pin of the plurality of data I/O pins included in the spare die.

A test system includes a non-volatile memory device that includes a plurality of memory blocks operating in a multi-plane mode, and a test machine that detects a bad block of the non-volatile memory device. The non-volatile memory device generates a ready/busy signal which is based on whether an erase loop for detection of the bad block progresses. When at least one normal block is detected from the plurality of memory blocks included in planes operating in the multi-plane mode, the non-volatile memory device generates the ready/busy signal having a first busy interval. When all the memory blocks included in the planes operating in the multi-plane mode are detected as bad blocks, the non-volatile memory device generates the ready/busy signal having a second busy interval shorter than the first busy interval.

Methods, systems, and apparatuses for redundancy in a memory array are described. A memory array may include some memory cells that are redundant to other memory cells of the array. Such redundant memory cells may be used if a another memory cell is discovered to be defective in some way; for example, after the array is fabricated and before deployment, defects in portions of the array that affect certain memory cells may be identified. Memory cells may be designated as redundant cells for numerous other memory cells of the array so that a total number of redundant cells in the array is relatively small fraction of the total number of cells of the array. A configuration of switching components may allow redundant cells to be operated in a manner that supports redundancy for numerous other cells and may limit or disturbances to neighboring cells when accessing redundancy cells.

A controller includes an interface and storage circuitry. The interface communicates with one or more memory devices, each of the memory devices includes multiple memory cells organized in memory blocks. The storage circuitry is configured to perform multiple storage operations to the memory cells in the one or more memory devices, and mark memory blocks in which one or more storage operations have failed as bad blocks. The controller is further configured to identify a pattern of multiple bad blocks occurring over a sequence of multiple consecutive storage operations, the pattern is indicative of a system-level malfunction in a memory system including the controller, and in response to identifying the pattern, to perform a corrective action to the memory system.

A data storage device may include: a storage configured as a group of a plurality of memory blocks; and a controller configured to: control data input/output of the storage according to a request transferred from a host device; configure one or more first block groups by grouping a preset number of memory blocks which are selected at the same time among the memory blocks during an operation of the storage; configure one or more second block groups by replacing a bad memory block of the respective first block groups with a spare memory block; manage as a special block group a second block group where the spare memory block having replaced the bad memory block is not present in the same plane of the bad memory block, among the second block groups; and write data having a preset property to the special block group.

An apparatus includes a first word line, a second word line and a control. The second word line is contiguous to the first word line. The control circuit includes a first defective address storing circuit and a first detection circuit. The first defective address storing circuit stores first enable information along with first defective address. The first enable information indicates whether or not the second word line is functional. The first detection circuit provides a first signal when the first word line is accessed. The first signal indicates whether or not the second word line is functional. The control circuit activates the second word line when the first signal indicates that the second word line is functional and does not activate the second word line when the first signal indicates that the second word line is not functional.