A rupture control device may include an address control circuit configured to generate a rupture address in response to a first rupture command signal, a rupture mask signal and an external address, wherein the rupture address is generated according to whether the rupture mask signal is activated, and wherein an address and fuse data are compared, and a rupture mask signal indicating whether a fuse is ruptured is determined. Further, a fuse array configured to perform a rupture operation in response to the rupture address when a rupture enable signal is activated, and output the fuse data in response to a read enable signal.

A memory device includes a memory cell array, a multiplexing circuit, and a control logic circuit. The memory cell array includes a first sub memory cell array, a second sub memory cell array, and a third sub memory cell array. The multiplexing circuit selects the first sub memory cell array, the second sub memory cell array, and the third sub memory cell array in a first mode of operation, and when the first sub memory cell array is defective in a second mode of operation, the multiplexing circuit selects the second sub memory cell array and the third sub memory cell array. The control logic circuit selects the first mode of operation or the second mode of operation. The control logic circuit controls the multiplexing circuit so that the first, second and third sub memory cell arrays are connected to input or output pads.

Memory device data-access schemes are disclosed. Various embodiments may include a memory device including a first column plane, a second column plane, and a data-steering circuit. The first column plane may include a first edge, a second edge, and a first number of digit lines arranged between the first edge and the second edge. The second column plane may include a third edge positioned adjacent to the second edge, a fourth edge, and a second number of digit lines arranged between the third edge and the fourth edge. The data-steering circuit may be configured to logically relate a first digit line of the first number of digit lines to a second digit line of the second number of digit lines, the first digit line proximate to the first edge and the second digit line proximate to the fourth edge. Associated systems and methods are also disclosed.

A Fail Bit (FB) repair method includes: a bank to be repaired of a chip to be repaired is determined; first repair processing is performed on a first FB using a redundant circuit; a bit position of a second FB in each target repair bank is determined, and second repair processing is performed on the second FB; an unrepaired FB in each target repair bank is determined, and candidate repair combinations of the unrepaired FBs and a candidate combination count are determined; and if the candidate combination count is greater than a combination count threshold, a target repair position is determined, and repair processing is performed on the target repair position using a Redundant Word-Line (RWL), the target repair position being a position of an FB that maximally reduces the candidate combination count after repair processing.

A method and device for Fail Bit (FB) repairing. The method includes: a bank to be repaired of a chip to be repaired is determined; first repair processing is performed on first FBs in each target repair bank using a redundant circuit; second FBs are determined, and second repair processing is performed on the second FBs through a state judgment repair operation; for each target repair bank, unrepaired FBs in the target repair bank is determined, and candidate repair combinations and candidate repair costs of the unrepaired FBs are determined using an optimal combined detection manner; and a target repair cost is determined according to the candidate repair costs, and a target repair solution corresponding to the target repair cost is determined to perform repair processing on the unrepaired FBs according to the target repair solution.

A memory device includes a memory cell array and a repair circuit configured to perform a repair operation and output a dirty signal to an external destination external to the memory device. The repair circuit further performs selecting a first redundancy address of the redundancy memory cells instead of a first fail address of the first failed memory cell, storing a first redundancy mapping for the first fail address to the first redundancy address, and in response to determining a second fail address of a second failed memory cell matches the first fail address, ignoring the first redundancy mapping, and outputting a dirty signal causing a second redundancy mapping to map the first fail address to a second redundancy address different from the first redundancy address of the redundancy memory cells.

A deduplication memory module, which is configured to internally perform memory deduplication, includes a hash table memory for storing multiple blocks of data in a hash table array including hash tables, each of the hash tables including physical buckets and a plurality of virtual buckets each including some of the physical buckets, each of the physical buckets including ways, an address lookup table memory (ALUTM) including a plurality of pointers indicating a location of each of the stored blocks of data in a corresponding one of the physical buckets, and a buffer memory for storing unique blocks of data not stored in the hash table memory when the hash table array is full, a processor, and memory, wherein the memory has stored thereon instructions that, when executed by the processor, cause the memory module to exchange data with an external system.

A memory system includes a main memory array, a redundant memory array, and a content addressable memory (CAM). The CAM includes a plurality of entries, wherein each entry includes a plurality of column address bits and a plurality of maskable row address bits. When an access address for a memory operation matches an entry of the CAM, the memory system is configured to access the redundant memory array to perform the memory operation.

Column based defect management techniques are presented. Each column of the memory has an associated isolation latch or register whose value indicates whether the column is defective, but in addition to this information, for columns marked as defective, additional information is used to indicate whether the column as a whole is to be treated as defective, or whether just individual bits of the column are defective. The defective elements can then be re-mapped to a redundant element at either the appropriate bit or column level based on the data. When a column is bad, but only on the bit level, the good bits can still be used for data, although this may be done at a penalty of under programming for some bits, as is described further below. A self contained Built In Self Test (BIST) flow constructed to collect the bit information through a set of column tests is also described. Based on this information, the bad bits can be extracted and re-grouped into bytes by the controller or on the memory to more efficiently use the column redundancy area.

A three-dimensional stacked memory device includes a buffer die having a plurality of core die memories stacked thereon. The buffer die is configured as a buffer to occupy a first space in the buffer die. The first memory module, disposed in a second space unoccupied by the buffer, is configured to operate as a cache of the core die memories. The controller is configured to detect a fault in a memory area corresponding to a cache line in the core die memories based on a result of a comparison between data stored in the cache line and data stored in the memory area corresponding to the cache line in the core die memories. The second memory module, disposed in a third space unoccupied by the buffer and the first memory module, is configured to replace the memory area when the fault is detected in the memory area.