A thermal sensor device capable of maintaining measurement accuracy for a long period by suppressing plastic deformation due to thermal expansion of the heat generating resistor and reducing resistance change of the heat generating resistor, includes: a substrate having an opening; and a diaphragm having a structure in which a lower film, a heat generating resistor, and an upper film are stacked so as to bridge the opening, in which a film thickness of the lower film is larger than a film thickness of the upper film, an average thermal expansion coefficient of the lower film is larger than an average thermal expansion coefficient of the upper film, the lower film includes a plurality of films having different thermal expansion coefficients, and a film having a largest thermal expansion coefficient among the plurality of films is formed below a thickness center of the lower film.

To obtain a physical quantity detection device capable of reducing an intake amount of air accompanied by foreign matter. A physical quantity detection device (20) of the invention includes a housing arranged in a main passage through which a measurement target gas (2) flows. The housing is provided with a second sub-passage (B) that takes in a part of the measurement target gas (2) flowing in the main passage, a circuit chamber (135) that accommodates a pressure sensor (320) that detects a pressure of the measurement target gas (2), and a pressure introduction passage (170) having one end opened in the middle of the second sub-passage (B) and the other end opened in the circuit chamber (135) and capable of introducing the pressure of the measurement target gas (2) from the second sub-passage (B) into the circuit chamber (135). In the pressure introduction passage (170), an introduction port (171) is arranged at a position offset outward from a side wall surface (152b) of the second sub-passage (B).

We disclose herein a sensing device comprising a semiconductor substrate having a first etched portion, a dielectric layer located on or over the semiconductor substrate, wherein the dielectric layer comprises a first dielectric membrane located adjacent to the first etched portion of the semiconductor substrate, a pressure sensing element and/or a flow sensing element within the first dielectric membrane, and a first structure configured to reinforce the dielectric membrane. A first portion of the first structure is located within the first dielectric membrane, the first structure has a higher stiffness than the first dielectric membrane, and the first portion of the first structure is located between a perimeter of the dielectric membrane and the pressure sensing element or flow sensing element.

We disclose herein a sensing device comprising a semiconductor substrate having a first etched portion, a dielectric layer located on or over the semiconductor substrate, wherein the dielectric layer comprises a first dielectric membrane located adjacent to the first etched portion of the semiconductor substrate, a pressure sensing element and/or a flow sensing element within the first dielectric membrane, and a first structure configured to reinforce the dielectric membrane. A first portion of the first structure is located within the first dielectric membrane, the first structure has a higher stiffness than the first dielectric membrane, and the first portion of the first structure is located between a perimeter of the dielectric membrane and the pressure sensing element or flow sensing element.

The purpose of the present invention is to provide a highly accurate and highly reliable physical quantity sensor wherein an error due to stress applied to a sensor element of the physical quantity sensor is reduced. This physical quantity sensor device is provided with: a hollow section formed in a Si substrate; an insulating film covering the hollow section; and a heating section formed in the insulating film. The sensor device is also provided with a detection element that detects the temperature of the insulating film above the hollow section, the detection element is provided with a first silicon element and a second silicon element, and the first silicon element and the second silicon element are doped with different impurities, respectively.

The purpose of the present invention is to provide a highly accurate and highly reliable physical quantity sensor wherein an error due to stress applied to a sensor element of the physical quantity sensor is reduced. This physical quantity sensor device is provided with: a hollow section formed in a Si substrate; an insulating film covering the hollow section; and a heating section formed in the insulating film. The sensor device is also provided with a detection element that detects the temperature of the insulating film above the hollow section, the detection element is provided with a first silicon element and a second silicon element, and the first silicon element and the second silicon element are doped with different impurities, respectively.

A monitoring and control system for a flow duct and a method for determining a component status of an operational component disposed within a flow passage of the flow duct utilizing the system are provided. In one exemplary aspect, the system includes at least two sensors that are disposed within the flow passage and configured to sense a characteristic of a fluid flowing therethrough. The sensors may be averaging sensors. Each sensor extends circumferentially about an axial centerline defined by the flow duct. The sensors are arranged in an overlapped arrangement. Particularly, the sensors extend circumferentially about the axial centerline such that the sensors physically overlap one another circumferentially. Additionally, the sensors may be disposed within the same or substantially the same plane axially. Signals generated by the sensors may be utilized to monitor and control the fluid and various operational components disposed within the flow passage.

A monitoring and control system for a flow duct and a method for determining a component status of an operational component disposed within a flow passage of the flow duct utilizing the system are provided. In one exemplary aspect, the system includes at least two sensors that are disposed within the flow passage and configured to sense a characteristic of a fluid flowing therethrough. The sensors may be averaging sensors. Each sensor extends circumferentially about an axial centerline defined by the flow duct. The sensors are arranged in an overlapped arrangement. Particularly, the sensors extend circumferentially about the axial centerline such that the sensors physically overlap one another circumferentially. Additionally, the sensors may be disposed within the same or substantially the same plane axially. Signals generated by the sensors may be utilized to monitor and control the fluid and various operational components disposed within the flow passage.

A physical quantity measurement device includes a housing forming a measurement flow path in which a sensor support supports a physical quantity sensor. The measurement flow path includes a sensor path in which the physical quantity sensor is disposed, an upstream curved path between the sensor path and an inlet, and a downstream curved path between the sensor path and an outlet. The housing includes a measurement narrowed portion that gradually narrows the measurement flow path in a direction from the inlet toward the physical quantity sensor. An upstream end of the sensor support is provided upstream of the measurement narrowed portion in an arrangement cross section along an imaginary straight line passing through the physical quantity sensor and extending in an arrangement direction in which the upstream curved path and the downstream curved path are arranged.

A physical quantity measurement device includes a housing forming a measurement flow path including a measurement inlet and a measurement outlet. The measurement flow path includes a sensor path in which a physical quantity sensor is disposed, an upstream curved path curved to extend from the sensor path toward the measurement inlet, and a downstream curved path curved to extend from the sensor path toward the measurement outlet. An inner surface of the housing includes an upstream outer curved surface that defines an outer outline of a curved part of the upstream curved path, and a downstream outer curved surface that defines an outer outline of a curve part of the downstream curved path. A degree of recess of the downstream outer curved surface is larger than a degree of recess of the upstream outer curved surface.