A crack analysis device includes a captured image acquiring unit, a crack detecting unit, and a crack ratio calculator. The captured image acquiring unit acquires a captured image which is obtained by imaging a road surface. The crack detecting unit detects cracks in the imaged road surface on the basis of the captured image. The crack ratio calculator calculates a crack ratio indicating a ratio of an area of the cracks to a predetermined area on the basis of the detected cracks.

A system and method for cosmetic evaluation of an electronic device, using the device's own camera or cameras to take photos of the device itself using a mirror or mirrors and using the processor of the electronic device itself to analyze its own cosmetic condition.

A method for production line monitoring during semiconductor device fabrication includes acquiring a plurality of inspection results from a plurality of reference samples with an inspection sub-system. The method includes storing the acquired inspection results and geometric pattern codes for each of the reference samples in a database. The method includes acquiring an additional inspection result from an additional sample, where the additional inspection result includes an additional set of geometric pattern codes for identifying each defect identified within the additional inspection result from the additional sample. The method also includes correlating the set of geometric pattern codes of the additional sample with the geometric pattern codes from the reference set of samples to identify at least one of one or more new patterns or one or more patterns displaying a frequency of occurrence above a selected threshold.

A defect inspection device is provided with an illumination optical system that irradiates light or an electron beam onto a sample, a detector that detects a signal obtained from the sample through the irradiation of the light or electron beam, a defect detection unit that detects a defect candidate on the sample through the comparison of a signal output by the detector and a prescribed threshold, and a display unit that displays a setting screen for setting the threshold. The setting screen is a two-dimensional distribution map that represents the distribution of the defect candidates in a three dimensional feature space having three features as the axes thereof and includes the axes of the three features and the threshold, which is represented in one dimension.

A method of analyzing semiconductor wafers includes capturing a first image of a first crystalline material, etching a first surface of the first crystalline material to delineate etch defects in the first crystalline material, and capturing a second image of first crystalline material after etching the first surface of the first crystalline material. Based on the second image, labels of etch defects delineated in the first surface of the first crystalline material are generated. The first image and the labels of etch defects are spatially coordinated to form a defect map identifying one or more defects in the first image based on the delineated etch defects, and based on the defect map and nondestructive data obtained from a second crystalline material, defects in the second crystalline material are identified.

A sheet fixing apparatus includes an image capturing unit having a first camera for capturing images of a target surface of a workpiece before a sheet is fixed to the target surface and a controller for controlling the image capturing unit. The controller determines whether the foreign matter is attached to the target surface or not on the basis of a first image captured of the target surface by the first camera by controlling the image capturing unit to capture the first image before the sheet is fixed to the target surface.

Disclosed is an inspection and measurement system for hollow cylindrical objects (100) such as internal gun barrel surface of large caliber gun barrels (150). The system (100) comprises an inspection device (200,500) operatively connected to the controller (400). The controller (400) is configured to receive realtime 2D image and 3D laser scan data captured by the inspection device (200,500) to generate 2D and 3D maps of the internal surface of the hollow cylindrical object and provide a means of visualization and interpretation of inspection and measurement data.

A method of inspecting a semiconductor device, includes: scanning a plurality of first circuit pattern layers of the semiconductor device and generating a plurality of first images respectively corresponding the plurality of first circuit pattern layers of the semiconductor device; overlapping the plurality of first images with each other and counting a plurality of first defects in the overlapped first images; setting main inspection areas with priority orders by using position coordinates of the counted first defects; and storing the main inspection areas with the position coordinates of the counted first defects.

A method of analyzing semiconductor wafers includes capturing a first image of a first crystalline material, etching a first surface of the first crystalline material to delineate etch defects in the first crystalline material, and capturing a second image of first crystalline material after etching the first surface of the first crystalline material. Based on the second image, labels of etch defects delineated in the first surface of the first crystalline material are generated. The first image and the labels of etch defects are spatially coordinated to form a defect map identifying one or more defects in the first image based on the delineated etch defects, and based on the defect map and nondestructive data obtained from a second crystalline material, defects in the second crystalline material are identified.