A method for evaluating a semiconductor wafer includes detecting semiconductor wafer LPDs as an examination sample in two measurement modes, performing size classification of the LPDs, calculating a distance between detection coordinates and a relative angle in the two measurement modes, presetting determination criteria to determine each LPD as a foreign matter or killer defect in accordance with each classified size, detecting semiconductor wafer LPDs as an evaluation target in the two measurement modes, performing size classification of the LPDs as the evaluation target, calculating a distance between detection coordinates and a relative angle of the evaluation target, and classifying the LPDs detected on a surface of the evaluation target into the killer defect and the foreign mater based on a result of the calculation and the determination criteria. The method enables classifying all LPDs from which quantitative size information cannot be provided, into the killer defect and foreign matter.

According to the improved concept, a method for analyzing a semiconductor element comprising polymer residues located on a surface of the semiconductor element is provided. The method comprises marking at least a fraction of the residues by exposing the semiconductor element to a fluorescent substance and detecting the marked residues by visualizing the marked residues on the surface of the semiconductor element using fluorescence microscopy.

A method for defect detection of a cathode electrode plate of a composite material strip includes obtaining a continuous image of the composite material strip; intercepting at least one image segment from the continuous image of the composite material strip, where the image segment includes a cathode electrode plate body region; and performing detection on the cathode electrode plate body region.

According to the improved concept, a method for analyzing a semiconductor element comprising polymer residues located on a surface of the semiconductor element is provided. The method comprises marking at least a fraction of the residues by exposing the semiconductor element to a fluorescent substance and detecting the marked residues by visualizing the marked residues on the surface of the semiconductor element using fluorescence microscopy.

Full-wafer inspection methods for a semiconductor wafer are disclosed. One method includes making a measurement of a select measurement parameter simultaneously over measurement sites of the entire surface of the semiconductor wafer at a maximum measurement-site pixel density .sub.max to obtain measurement data, wherein the total number of measurement-site pixels obtained at the maximum measurement-site pixel density .sub.max is between 10.sup.4 and 10.sup.8. The method also includes defining a plurality of zones of the surface of the semiconductor wafer, with each of the zones having a measurement-site pixel density , with at least two of the zones having a different sized measurement-site pixel and thus a different measurement-site pixel density . The method also includes processing the measurement data based on the plurality of zones and the corresponding measurement-site pixel densities . The processed measurement data can be used for statistical process control of the process used to form devices on the semiconductor wafer.

According to the improved concept, a method for analyzing a semiconductor element comprising polymer residues located on a surface of the semiconductor element is provided. The method comprises marking at least a fraction of the residues by exposing the semiconductor element to a fluorescent substance and detecting the marked residues by visualizing the marked residues on the surface of the semiconductor element using fluorescence microscopy.

A computer implemented method. The method includes obtaining, using a processor, spectral reflectance data from a coated surface having a target coating theron; and determining, using the processor, whether the data includes any outlier data points. The method also includes removing, using the processor, at least one of the outlier data points to produce final spectral reflectance data; and calculating, using the processor, a characteristic of the target coating based at least in part on the final spectral reflectance data.

A system for taking high-resolution photographs from a vehicle-mounted camera, forming orthomosaics from video and/or multiple high-resolution photographs, and using artificial intelligence to detect and classify pavement flaws and defects in the imagery. Detection also includes the ability to capture quantifiable metrics for the defects and/or a region of interest. Three-dimensional imagery is produced from the same images as the orthomosaics. Surface and terrain map products made from the same source images capture additional details such as depth and volume. The highlighted orthomosaics and three-dimensional imagery can then be used as a basis to determine the pavement surface condition and subsequently support maintenance orders and manage pavement repairs. Further, metadata such as latitude, longitude, and altitude geo-location coordinates and sampling time can also be transferred to the output products to create a digital time history and enable analysis for preventative maintenance planning. Alternatively-sourced imagery may also be analyzed.

A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The optical collection and detection system features, in the front quartersphere, a light channel assembly for collecting light reflected from the surface of the workpiece, and a front collector and wing collectors for collecting light scattered from the surface, to greatly improve the measurement capabilities of the system. The light channel assembly has a switchable edge exclusion mask and a reflected light detection system for improved detection of the reflected light.

An apparatus divides a photographed image of a sheet-like inspection object into blocks each of which has a size of a predetermined number of pixels by a predetermined number of pixels, calculates a longitudinal variance based on pixel values in a longitudinal direction in each block and a lateral variance based on pixel values in a lateral direction in the block, determines whether the block is a defect candidate using the longitudinal variance and the lateral variance as sheet-like inspection object defect determination evaluation values, and determines, based on one of a length and an area of the blocks determined as the defect candidates, whether the sheet-like inspection object has defect.