An automatic detection method and an automatic detection system for detecting any crack on wafer edges are provided. The automatic detection method includes the following steps. Several wafer images of several wafers are obtained. The wafer images are integrated to create a templet image. Each of the wafer images is compared with the templet image to obtain a differential image. Each of the differential images is binarized. Each of the differential images which are binarized is de-noised. Whether each of the differential images has an edge crack is detected according to pattern of each of the differential images which are de-noised.

A device may detect a semiconductor wafer to be transferred from a source wafer carrier to a target wafer carrier, and may cause a light source to illuminate the semiconductor wafer. The device may cause a camera to capture images of the semiconductor wafer after the light source illuminates the semiconductor wafer, and may perform image recognition of the images of the semiconductor wafer to determine whether an edge of the semiconductor wafer is damaged. The device may cause the semiconductor wafer to be provided to the source wafer carrier when the edge of the semiconductor wafer is determined to be damaged, and may cause the semiconductor wafer to be provided to the target wafer carrier when the edge of the semiconductor wafer is determined to be undamaged.

A method of inspection or metrology of four sides of a sample is disclosed. The method includes providing samples in a carrier at a first side of an imaging tool and moving the samples from the carrier to the imaging tool via a pick-and-place stage assembly. The method includes imaging first and second sides of the samples via first and second channels of the imaging tool and returning the samples to the carrier. The method includes rotating the carrier by 90 degrees and translating the carrier to an opposite side of the imaging tool and moving the samples individually from the carrier to the imaging tool. The method includes imaging a third and fourth side of the sample via the first and second channel of the imaging tool and returning the one or more samples from the imaging tool to the carrier.

In a method of optimizing a lithography model in a lithography simulation, a mask is formed in accordance with a given layout, a wafer is printed using the mask, a pattern formed on the printed wafer is measured, a wafer pattern is simulated using a wafer edge bias table and the given mask layout, a difference between the simulated wafer pattern and the measured pattern is obtained, and the wafer edge table is adjusted according to the difference.

A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.

A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate over the whole periphery of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate over the whole periphery of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.

Shadow-grams are used for edge inspection and metrology of a stacked wafer. The system includes a light source that directs collimated light at an edge of the stacked wafer, a detector opposite the light source, and a controller connected to the detector. The stacked wafer can rotate with respect to the light source. The controller analyzes a shadow-gram image of the edge of the stacked wafer. Measurements of a silhouette of the stacked wafer in the shadow-gram image are compared to predetermined measurements. Multiple shadow-gram images at different points along the edge of the stacked wafer can be aggregated and analyzed.

A method for inspecting a wafer includes: rotating the wafer about an axis of the wafer, emitting from a light source, two pairs of incident coherent light beams, each pair forming, at the intersection between the two beams, a measurement volume, a portion of the main wafer surface passing through each of the measurement volumes during the rotation, collecting a light beam scattered by the wafer surface, capturing the collected light and emitting an electrical signal representing the variation in the collected light intensity, detecting in the signal, a frequency, being the time signature of a defect through a respective measurement volume, for each detected signature, determining a visibility parameter, on the basis of the visibility determined, obtaining an item of information on the size of the defect, and cross-checking the items of information to determine the size of the defect.

A method for photoluminescence measurement of a sample that includes a front face and a rear face linked by a contour, the sample resting, via the rear face of same, on a receiving face of an active base. The sample also includes a first region partially delimited by the contour and that emits a photoluminescence signal of an intensity, referred to as the first intensity, that is lower at any point to the average intensity of the photoluminescence signal of the sample, referred to as the reference intensity, the active base emitting a photoluminescence signal of an intensity, referred to as the secondary intensity, that is at least equal to the reference intensity. The active base includes an edge that is set apart from the contour by an overlap distance and that delimits, with said contour, a peripheral section of the active base.

A device may detect a semiconductor wafer to be transferred from a source wafer carrier to a target wafer carrier, and may cause a light source to illuminate the semiconductor wafer. The device may cause a camera to capture images of the semiconductor wafer after the light source illuminates the semiconductor wafer, and may perform image recognition of the images of the semiconductor wafer to determine whether an edge of the semiconductor wafer is damaged. The device may cause the semiconductor wafer to be provided to the source wafer carrier when the edge of the semiconductor wafer is determined to be damaged, and may cause the semiconductor wafer to be provided to the target wafer carrier when the edge of the semiconductor wafer is determined to be undamaged.