A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.

A method for constructing an image includes: defining a foreground area associated with an object in an original image; identifying a plurality of contour points defining a contour of the object; for each of the contour points, obtaining a reference contour point set that includes at least one reference contour point on each of two sides of the contour point; obtaining a plurality of characteristic lines, each associated with the reference contour point set and defined by an end point obtained from the contour points; and aligning the end points on one side to form a straight edge and making the characteristic lines adjoin each other side by side, so as to construct a reconstructed image.

Disclosed is a method for analyzing a shape of a wafer. The method includes measuring external shapes of a plurality of wafers, detecting a first point having a maximum curvature in an edge region of each wafer from measured values acquired in the measuring the external shapes of the wafers, detecting a second point spaced apart from the first point in a direction towards an apex of a corresponding one of the wafers, measuring a first angle formed between a first line configured to connect the first point and the second point and a front side of the corresponding one of the wafers, forming a thin film layer on a surface of each wafer, measuring a thickness profile of the thin film layer, and confirming a wafer in which a maximum value of the thickness profile of the thin film layer is the smallest among the wafers.

There is provided an inspection device allowing surely measuring irregular-shaped parts such as a bevel of a wafer while saving space. An inspection device 100 is provided with outer periphery illuminating units 11, 111 for illuminating an outer peripheral region AP of a wafer WA being a target, and an outer periphery imaging unit that images the outer peripheral region AP of the wafer WA. The outer periphery illuminating units 11, 111 have arcuate illuminating units 11a, 111a that are arranged along a partial region of a circumference CI centered on a reference axis SA and illuminate a predetermined region A1 on the reference axis SA, and the reference axis SA of the arcuate illuminating units 11a, 111a extends in a direction crossing the tangent direction along which an outer peripheral part UA of the wafer WA extends.

In an embodiment, a system includes: an orientation sensor configured to detect an orientation fiducial on a bevel of a wafer; a pedestal configured to rotate the wafer to allow the orientation sensor to detect the orientation fiducial and place the orientation fiducial at a predetermined orientation position; and a defect sensor configured to detect a wafer defect along a surface of the wafer while rotated by the pedestal.

Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.

In a method of optimizing a lithography model in a lithography simulation, a mask is formed in accordance with a given layout, a wafer is printed using the mask, a pattern formed on the printed wafer is measured, a wafer pattern is simulated using a wafer edge bias table and the given mask layout, a difference between the simulated wafer pattern and the measured pattern is obtained, and the wafer edge table is adjusted according to the difference.

A precision edge detection system and sensor assembly is provided that uses a reflection technique to provide an energy efficient device that can be achieved using a relatively small form factor. There is provided an optical reflective sensor assembly that includes a light source, an optical element positioned to collimate and focus light from the light source to generate a focused beam, and at least one photodetector positioned adjacent the light source. The at least one photodetector is configured to detect light from the focused beam that has been reflected by an object positioned opposite the light source.

Provided is a holographic microscope including an input optical system configured to emit polarized input beam, a first beam splitter configured to emit an object beam by reflecting a portion of the polarized input beam, and emit a reference beam by transmitting a remaining portion of the polarized input beam, a reference optical system configured to separate the reference beam into a first reference beam and a second reference beam, a camera configured to receive the first reference beam and the second reference beam and the object beam that is reflected by an inspection object, the camera including a micro polarizer array, wherein a first polarization axis of the first reference beam is perpendicular to a second polarization axis of the second reference beam.

A processing apparatus includes a holding table. The holding table includes a frustoconical portion and a wafer holding portion formed on the upper surface of the frustoconical portion for holding the wafer. Light is applied from a light emitting member to the side surface of the frustoconical portion and next reflected on the side surface of the frustoconical portion. The light reflected is applied to the outer circumference of the wafer held on the wafer holding portion of the holding table to thereby image the outer circumference of the wafer by an imaging unit.