A method evaluates an edge shape of a silicon wafer, in which as shape parameters in a wafer cross section, when defining a radial direction reference L1, a radial direction reference L2, an intersection point P1, a height reference plane L3, h1 [m], h2 [m], a point Px3, a straight line Lx, an angle x, a point Px0, [m], a point Px1, and a radius Rx [m], the edge shape of the silicon wafer is measured, values of the shape parameters h1, h2, and are set, the shape parameters Rx and x are calculated in accordance with the definition based on measurement data of the edge shape, and the edge shape of the silicon wafer is determined from the calculated Rx and x to be evaluated. Consequently, a method evaluates an edge shape of a silicon wafer capable of preventing an occurrence of trouble.

The embodiments disclosed herein can enable a target on a semiconductor wafer to be reconstructed and/or imaged. A surface of a target on a semiconductor wafer is measured using a wafer metrology tool. A voxel map of the surface is fixed to match geometry measurements and using scattering density of expected materials. Uniform scaling of the scattering density of all fixed surface voxels can occur.

A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, and an edge detector. The transfer chamber is configured to interface with an electroplating apparatus. The annealing station is arranged to anneal a wafer. The robot arm is arranged to transfer the wafer from the transfer chamber to the annealing station. The edge detector is disposed over the robot arm for the purpose of monitoring at least one portion of an edge bevel removal area of the wafer carried by the robot arm.

A system, computer program product and a method for detecting manufacturing process defects, the method may include: obtaining multiple edge measurements of one or more structural elements after a completion of each one of multiple manufacturing phases; generating spatial spectrums, based on the multiple edge measurements, for each one of the multiple manufacturing phases; determining relationships between bands of the spatial spectrums; and identifying at least one of the manufacturing process defects based on the relationships between the bands of the spatial spectrums.

Methods and systems for identifying a source of nuisance defects on a wafer are provided. One method includes detecting defects on a wafer by applying a hot threshold to output generated for the wafer by a detector of an inspection subsystem such that at least a majority of the detected defects include nuisance defects and determining locations of the detected defects with respect to design information for the wafer. In addition, the method includes stacking information for the detected defects based on the determined locations relative to a structure on the wafer such that the detected defects having the same locations relative to the structure are coincident with each other in results of the stacking. The method further includes identifying a source of the nuisance defects based on the results of the stacking.

In a method of optimizing a lithography model in a lithography simulation, a mask is formed in accordance with a given layout, a wafer is printed using the mask, a pattern formed on the printed wafer is measured, a wafer pattern is simulated using a wafer edge bias table and the given mask layout, a difference between the simulated wafer pattern and the measured pattern is obtained, and the wafer edge table is adjusted according to the difference.

Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.

The embodiments disclosed herein can enable a target on a semiconductor wafer to be reconstructed and/or imaged. A surface of a target on a semiconductor wafer is measured using a wafer metrology tool. A voxel map of the surface is fixed to match geometry measurements and using scattering density of expected materials. Uniform scaling of the scattering density of all fixed surface voxels can occur.

In a device for observing a semiconductor wafer, a positional relationship between an in-wafer region and a background region in an imaging field of view is not constant when an outer peripheral portion of the wafer is imaged, which results in an increase in the quantity of calculation in defect detection and image classification processing and makes it difficult to efficiently perform defect observation and analysis. There is provided a defect observation system for a semiconductor wafer, and the system includes: a stage on which the semiconductor wafer is placed and which is movable in an XY direction, an imaging unit that is configured to image a portion including an edge of the semiconductor wafer, and an image output unit that is configured to, with respect to a plurality of images obtained by imaging, output images in which edges of the wafer are substantially in parallel among the plurality of images.

A processing apparatus includes a holding table. The holding table includes a frustoconical portion and a wafer holding portion formed on the upper surface of the frustoconical portion for holding the wafer. Light is applied from a light emitting member to the side surface of the frustoconical portion and next reflected on the side surface of the frustoconical portion. The light reflected is applied to the outer circumference of the wafer held on the wafer holding portion of the holding table to thereby image the outer circumference of the wafer by an imaging unit.