A nonlinear crystal including stacked strontium tetraborate SrB.sub.4O.sub.7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency doubling stage of a laser assembly to generate laser output light having a wavelength in the range of about 180 nm to 200 nm. One or more fundamental laser beams are frequency doubled, down-converted and/or summed using one or more frequency conversion stages to generate an intermediate frequency light with a corresponding wavelength in the range of about 360 nm to 400 nm, and then the final frequency converting stage utilizes the nonlinear crystal to double the frequency of the intermediate frequency light to generate the desired laser output light at high power. Methods, inspection systems, lithography systems and cutting systems incorporating the laser assembly are also described.

A defect inspection apparatus including a stand that supports a sample, an illumination optical system that irradiates the sample with illumination light, a scanning device that drives the sample stand to change position, detection optical systems that condense illumination scattered light from a surface of the sample, sensors that convert the condensed light into an electric signal and output a detection signal, a storage device that stores a plurality of feature vectors for each defect type, and a signal processing device that processes detection signals input from the plurality of sensors. The signal processing device calculates a measurement vector that is a feature vector of a defect on the surface of the sample, generates a feature vector of a virtual defect in which a form of the detection defect has been changed, from the actual measurement vector, and accumulates the feature vector of the virtual defect of one instruction defect.

It is judged whether or not an average gray level of an image of a wafer W that is an inspection target and that has been imaged by the light receiving part 2 is in the defect detectable range. A control processing part 6a is configured to modify an exposure time in imaging the wafer W and to obtain an image of the wafer W again by the light receiving part 2 in the case in which it is decided that an average gray level of an image of the wafer W is not in a defect detectable range, and an image processing part 6b is configured to carry out a defect inspection based on an image of the wafer W in the case in which it is decided that an average gray level of the image of the wafer W is in the defect detectable range.

Disclosed is a qualitative evaluation method of a volumetric defect density due to other grains having different crystal orientations from a single crystal matrix in a (001) monoclinic gallium oxide sample or a (010) monoclinic gallium oxide sample.

The method includes the steps of: forming an etch pit by etching an observation plane of a single crystal; and selecting a quadrilateral etch pit formed by volumetric defects except for void defects.

A method for detecting a bonding failure part of a compound semiconductor chip cut from a compound semiconductor wafer in which a first transparent substrate composed of a compound semiconductor having a light-emitting layer is bonded with a second transparent substrate composed of a compound semiconductor, includes: irradiating the compound semiconductor chip with a coaxial vertical light, and identifying a color of a reflected-light from the bonding failure part of the compound semiconductor chip to detect the bonding failure part. As a result, a method for detecting a bonding failure part can precisely detect a bonding failure part on a bonding interface of a compound semiconductor chip cut from a compound semiconductor wafer in which two transparent substrates composed of a compound semiconductor are directly bonded with each other.

A system and method of non-contact measurement of the dopant content of semiconductor material by reflecting infrared (IR) radiation off of the material into an integrating sphere to scatter the received radiation and passing portions of the radiation through band pass filters of differing wavelength ranges, comparing the level of energy passed through each filter and calculating the dopant content by referencing a correlation curve made up of known wafer dopant content for that system.

A sample positioning system is disclosed. The system may include an imaging detector. The system may further include a controller communicatively coupled to the imaging detector and a sample stage, the controller including one or more processors configured to execute program instructions causing the one or more processors to: receive a current position of a field of view of the imaging detector; receive a target position of the sample; receive locations of reference features along a path; direct the sample stage to translate the sample along the path; direct the imaging detector to capture images of the reference features along the path; determine positioning errors of the sample stage along the path based on the images of the reference features; and adjust at least one of a velocity of the sample stage or the path to the target location based on the positioning errors during translation.

Optical fabrication monitor structures can be included in a design fabricated on a wafer from a mask or fabrication reticle. A first set of components can be formed in an initial fabrication cycle, where the first set includes functional components and monitor structures. A second set of components can be formed by subsequent fabrication processes that can potentially cause errors or damage to the first set of components. The monitor structures can be implemented during fabrication (e.g., in a cleanroom) to detect fabrication errors without pulling or scrapping the wafer.

A semiconductor substrate processing apparatus includes: a metastructure layer divided into a plurality of microstructures by grooves, a light-transmitting dielectric substrate that supports the plurality of microstructures and is configured to allow an electromagnetic wave to be transmitted therethrough, and a frame including an exhaust hole configured to receive gas introduced from the grooves such as to provide suction force to the semiconductor substrate, wherein each of the plurality of microstructures has a smaller width than a wavelength of the electromagnetic wave, and each of the grooves has a smaller width than the wavelength of the electromagnetic wave.

A die bonding apparatus includes a first illumination device for irradiating a die with light along an optical axis of a photographing device, and a second illumination device that is located above the first illumination device and irradiates the die with light having a predefined angle with respect to the optical axis. The second illumination device includes a second light emitting section, and a light path control member that limits a light path of second irradiation light emitted from the second light emitting section. The second illumination device is disposed in such a way that the second irradiation light, the light path of which is limited by the light path control member, passes through the cylinder of the first illumination device, and the top surface of the die is irradiated with the second irradiation light.