Characteristics of a standard logic cell, e.g., a random logic cell, are determined using an effective cell approximation. The effective cell approximation is smaller than the standard logic cell and represents the density of lines and spaces of the standard logic cell. The effective cell approximation may be produced based on a selected area from the standard logic cell and include the same non-periodic patterns as the selected area. The effective cell approximation, alternatively, may represent non-periodic patterns in the standard logic cell using periodic patterns having a same density of lines and spaces as found in the standard logic cell. A structure on the sample, such as a logic cell or a metrology target produced based on the effective cell approximation is measured to acquire data, which is compared to the data for the effective cell approximation to determine a characteristic of the standard logic cell.

A method for evaluating images of a printed pattern. The method includes obtaining a first averaged image of the printed pattern, where the first averaged image is generated by averaging raw images of the printed pattern. The method also includes identifying one or more features of the first averaged image. The method further includes evaluating the first averaged image, using an image quality classification model and based at least on the one or more features. The evaluating includes determining, by the image quality classification model, whether the first averaged image satisfies a metric.

A method for a substrate processing system includes imaging a substrate before start and after completion of a series of processings on the substrate; specifying a first processing apparatus estimated as having a potential abnormality among a plurality of processing apparatuses; performing a first process on a first inspection substrate under a selected processing condition using the first processing apparatus specified in the specifying, and imaging the first inspection substrate before and after the performing the first process to acquire a first imaging result; performing a second process on a second inspection substrate using a second processing apparatus, and imaging the second inspection substrate for comparison before and after the performing the second process to acquire a second imaging result; and determining whether an actual abnormality exists in the first processing apparatus, based on the first imaging result and the second imaging result.

A photolithography method includes dispensing a first liquid toward a target layer through a nozzle at a first distance from the target layer; moving the nozzle such that the nozzle is at a second distance from the target layer, wherein the second distance is different from the first distance; dispensing a second liquid toward the target layer through the nozzle at the second distance from the target layer; and patterning the target layer after dispensing the first liquid and the second liquid.

There is provided a system and method of a method of mask inspection, comprising: obtaining a first image representative of at least part of the mask; applying a printing threshold on the first image to obtain a second image; estimating a contour for each structural element of interest (SEI) of a group of SEIs, and extracting a set of attributes characterizing the contour, giving rise to a group of contours corresponding to the group of SEIs and respective sets of attributes associated therewith; for each given contour, identifying, among the remaining contours in the group of contours, one or more reference contours similar to the given contour, by comparing between the respective sets of attributes associated therewith; and measuring a deviation between the given contour and each reference contour thereof, giving rise to one or more measured deviations indicative of whether a defect is present.

A method of testing a display device includes obtaining a photographed image by photographing a target substrate, where the target substrate includes patterns arranged in a first direction and a second direction, obtaining grayscale values of the patterns by grayscaling the photographed image, determining an inspection target pattern from among the patterns, obtaining a first comparison value by comparing a grayscale value of the inspection target pattern with a grayscale value of a first vertically adjacent pattern adjacent in the first direction, obtaining a second comparison value by comparing the grayscale value of the inspection target pattern with a grayscale value of a first diagonally adjacent pattern adjacent in a third direction crossing the first and second directions, obtaining a compensated comparison value by compensating the first comparison value based on the second comparison value, and determining a defect of the inspection target pattern based on the compensated comparison value.

According to one embodiment, an inspection method includes acquiring a first image based on a reflected light of a first light reflected by a surface of a leadframe when the first light is irradiated on the surface from a first direction. The inspection method further includes detecting a foreign matter at the surface by using the first image. The first direction is tilted with respect to the surface.

There is provided a system and method of inspecting a specimen. The method includes obtaining a first image of an inspection area of a die of a semiconductor specimen and a group of reference images corresponding to a group of candidate reference units, obtaining a second image informative of one or more partitions of the inspection area respectively associated with one or more inspection algorithms, for each given pixel of the first image, determining location of one or more reference pixels thereof based on information of the second image, selecting, from the group of candidate reference units, one or more specific reference units actually required for inspecting the inspection area based on the determined location, and using one or more reference images corresponding to the selected reference units to inspect the first image, thereby providing an inspection result of the inspection area.

A semiconductor device inspection method including: depositing a dielectric material over a substrate to form an interconnect-level dielectric (ILD) layer; patterning the ILD layer to form via structures in the ILD layer; depositing an electrically conductive material to form an inspection layer on the ILD layer and in the via structures; imaging the inspection layer to generate image data; and detecting any defects in the via structures by analyzing the image data.

A method includes obtaining image(s) of a dental device, determining file(s) including at least one of a first model of the dental device or a second model of a mold, determining an intended property for the dental device based on at least one of the first model or the second model, and determining an actual property of the dental device from the image(s). The method further includes determining whether a cutline variation, an arch variation, and/or a bend of the dental device is detected between the dental device and the first model and/or the second model by comparing the intended property with the actual property. The method further includes determining whether there is a possible defect in the dental device based on whether the cutline variation exceeds a cutline variation threshold, the arch variation exceeds an arch variation threshold, and/or the bend exceeds a bend threshold.