The disclosure is directed to a device interface, system and method for connecting a Tester Interface Unit (TIU) to an automated test equipment that enable data rates of over 1.0 Gbps over scalable high speed cables. The device interface includes at least one flange assembly connecting an electron beam probe (EBP) in a vacuum-controlled environment to an ambient environment, the flange assembly including a vacuum-controlled passthrough environment coupled to the EBP, a plurality of cables coupled to a plurality of connectors within the vacuum-controlled passthrough environment to provide power, control and signal connections to the ambient environment, the plurality cables including plurality of hermetically-sealed printed circuit boards (PCBs) carrying digital high speed signals from the TIU, a plurality of power cables supporting a plurality of power requirements, and a plurality of ATE communication control cables to direct the TIU.

An interconnect circuit testing apparatus including: an electric signal generating circuit for generating an electric signal; a first electrode arranged at a first region of a substrate, wherein the substrate includes an interconnect circuit, an upper surface and a lower surface; a second electrode arranged at a second region of the substrate; and a sensor for detecting an electric field emitted from the first region or the second region when the electric signal is applied to the substrate through the first electrode and the second electrode.

A sensor head of a test and measurement instrument can include an input configured to receive an input signal from a device under test (DUT), an optical voltage sensor having signal input electrodes and control electrodes or one set of electrodes, wherein the input is connected to the signal input electrodes, and a bias control unit connected to the control electrodes and configured to reduce an error signal or the input signal bias control signal are electrically combined and applied to a single set of electrodes.

A system and method are provided for compensating for thermal drift of a probe device. The method includes monitoring a first temperature of a laser source in a sensor head that receives output electrical signals from a DUT and outputs corresponding optical signals; monitoring a second temperature of a photoreceiver in a probe interface that converts the optical signals to electrical test signals to input to the test instrument; calculating a first value of a first bias voltage using the first temperature; applying the first value of the first bias voltage to the laser source to compensate for thermal drift when the first temperature is within a first predefined temperature range; calculating a second value of a second bias voltage for the photoreceiver using the second temperature; and applying the second value of the second bias voltage to the photoreceiver to compensate for thermal drift when the second temperature is within a second predefined temperature range.

A measurement apparatus for measuring at least one property of an electron bunch or other group of charged particles travelling through a cavity (310), comprises a plurality of electrodes (302-308) arranged around the cavity, a plurality of optical sensors (322-328), wherein the plurality of electrodes are configured to provide signals to the optical sensors thereby to modulate at least one optical property of the optical sensors. The apparatus further comprises at least one laser source (330) for providing a laser beam comprising a series of laser pulses to the plurality of optical sensors to obtain measurements representative of said at least one optical property of the optical sensors, and a processing resource (320) configured to process at least a first measurement signal from a first one of the optical sensors and a second measurement signal from a second one of the optical sensors, thereby to determine at least one property of the electron bunch or other group of charged particles, wherein the at least one property comprises charge and/or lateral position.

A wafer level electrical probe system with multiple wavelength and intensity illumination capability system that enables concurrent reliability studies of illumination stimulation, electrical stimulation, and the interplay of both electrical and illumination stimulation. The probe system includes five sub-systems: a controllable wavelength and intensity illumination input sub-system with two different configurations; a wafer level electrical probe sub-system; an illumination intensity calibration sub-system; an illumination delivery sub-system; and an illumination wavelength calibration sub-system.

A semiconductor device inspection system (1) includes a laser beam source (2), for emitting light, an optical sensor (12) for detecting the light reflected by the semiconductor device (10) from the light and outputting a detection signal, a frequency band setting unit (16) for setting a measurement frequency band and a reference frequency band with respect to the detection signal, a spectrum analyzer (15) for generating a measurement signal and a reference signal from the detection signals in the measurement frequency band and the reference frequency band, and a signal acquisition unit (17) for calculating a difference between the measurement signal and the reference signal to acquire an analysis signal. The frequency band setting unit (16) sets the reference frequency band to a frequency domain in which a level of the detection signal is lower than a level obtained by adding 3 decibels to a white noise level serving as a reference.

The present disclosure relates to a method and a device for reconstructing a useful signal from an acquired signal made up of a plurality of samples representing physical quantities measured. The acquired signal includes the useful signal made noisy by a noise. The method includes decomposing the acquired signal on a predetermined wavelet decomposition base according to a given number of decomposition levels, and obtaining corresponding wavelet coefficients representing the acquired signal. The method further estimates a value representing the standard deviation of the noise from at least one portion of the wavelet coefficients; and implements an iterative method for reconstructing parsimonious signals on the acquired signal with a dictionary built from the wavelet decomposition base. The iterative method has an associated stop criterion that is calculated as a function of the value representing the estimated noise.

A transparent coversheet intervenes between a lens and a thinned die in a visible light fault analysis tool so that the thinned die is robust to fractures. In addition, the transparent coversheet has a greater thermal mass than the thinned die and thus acts as a heat sink to prevent active circuitry in the thinned die from overheating during the visible light fault analysis.

A semiconductor device inspection system (1) includes a laser beam source (2), for emitting light, an optical sensor (12) for detecting the light reflected by the semiconductor device (10) from the light and outputting a detection signal, a frequency band setting unit (16) for setting a measurement frequency band and a reference frequency band with respect to the detection signal, a spectrum analyzer (15) for generating a measurement signal and a reference signal from the detection signals in the measurement frequency band and the reference frequency band, and a signal acquisition unit (17) for calculating a difference between the measurement signal and the reference signal to acquire an analysis signal. The frequency band setting unit (16) sets the reference frequency band to a frequency domain in which a level of the detection signal is lower than a level obtained by adding 3 decibels to a white noise level serving as a reference.