According to some aspects, a system and method for processing messages in a plurality of successive cycles is provided. One such system may include a plurality of first circuits, each first circuit configured to output a message, the plurality of first circuits configured to operate synchronously, a first plurality of buffers, each buffer associated with a respective first circuit and configured to store a message output by the respective first circuit, a communication path configured to receive the plurality of messages from the buffers and to perform aggregation of the messages, thereby generating an aggregated indication, and one or more second circuits. The one or more second circuits are configured to operate synchronously and to receive the aggregated indication, wherein buffers of the first plurality of buffers are configured to store messages from respective first circuits for different times.

A method for determining the propagation delay of each path in an integrated circuit is provided herein. The method includes determining, in a worst-based mode, whether a propagation delay of a selected path exceeds a timing requirement; determining, in a path-based mode, whether the propagation delay of a selected path exceeds the timing requirement; and when the selected path exceeds the timing requirement in the path-based mode, lowering the cell delay of each cell in the selected path.

A three-dimensional stacked memory device includes a buffer die having a plurality of core die memories stacked thereon. The buffer die is configured as a buffer to occupy a first space in the buffer die. The first memory module, disposed in a second space unoccupied by the buffer, is configured to operate as a cache of the core die memories. The controller is configured to detect a fault in a memory area corresponding to a cache line in the core die memories based on a result of a comparison between data stored in the cache line and data stored in the memory area corresponding to the cache line in the core die memories. The second memory module, disposed in a third space unoccupied by the buffer and the first memory module, is configured to replace the memory area when the fault is detected in the memory area.

A three-dimensional stacked memory device includes a buffer die having a plurality of core die memories stacked thereon. The buffer die is configured as a buffer to occupy a first space in the buffer die. The first memory module, disposed in a second space unoccupied by the buffer, is configured to operate as a cache of the core die memories. The controller is configured to detect a fault in a memory area corresponding to a cache line in the core die memories based on a result of a comparison between data stored in the cache line and data stored in the memory area corresponding to the cache line in the core die memories. The second memory module, disposed in a third space unoccupied by the buffer and the first memory module, is configured to replace the memory area when the fault is detected in the memory area.

A measurement system is described. The measurement system includes a test-and-measurement (T&A) circuit and an error analysis circuit. The T&A circuit is configured to generate measurement data. The measurement data includes at least one of analysis data and configuration data. The analysis data is associated with an analysis of at least one input signal. The configuration data is associated with at least one of a physical measurement setup of the measurement system and measurement settings of the measurement system. The T&A circuit further is configured to generate a graphic representation of the measurement data. The error analysis circuit is configured to identify errors or anomalies associated with the measurement data based on the graphic representation. Further, a measurement method is described.

Embodiments are directed to a system for measuring a degradation characteristic of a plurality of electronic components. The system includes a parallel stress generator communicatively coupled to the plurality of electronic components, and a serial electronic measuring component communicatively coupled to the plurality of electronic components. The parallel stress generator is configured to generate a plurality of stress signals, apply the plurality of stress signals in parallel to the plurality of electronic components and remove the plurality of stress signals from the plurality of electronic components. The serial electronic measuring component is configured to, subsequent to the removal of the plurality of stress signals, sequentially measure the degradation characteristic of each one of the plurality of electronic components in order to determine their degradation resulting from the applied stress signals.

A method, and forming an associated system, for testing semiconductor devices. Driver channels are provided, each driver channel connected to a storage device via a bus and connected to a respective semiconductor device. Each driver channel includes: a first voltage driver connected to the respective semiconductor device and having a first input for the respective semiconductor device, a second voltage driver connected to the respective semiconductor device and having a second input for the respective semiconductor device, first and second sets of optical switches in the first and second voltage driver respectively, and a microcontroller. All connections between the respective semiconductor device and both the first and second voltage drivers, in response to all optical switches of the first and second set of optical switches being closed. The semiconductor devices are tested, using the driver channels and the test parameters. The test results are provided to the storage device.

According to one or more embodiments, the semiconductor integrated circuit device includes a pattern generator, a result comparator, and a control circuit. The pattern generator supplies input data to a device-under-test. The result comparator compares output data of the device-under-test with expected value data and outputs a test result signal. The control circuit controls the pattern generator and the result comparator. The device-under-test and the result comparator are commonly connected to a first clock line. The pattern generator and the control circuit are commonly connected to a second clock line different from the first clock line.

A finite impulse response (FIR) filter including a delay line and a plurality of arithmetic units. Each arithmetic unit is coupled to a different one of a plurality of tap points of the delay line, is configured to receive a respective signal value over the delay line, and is associated with a respective coefficient. Any given one of the arithmetic units is configured to receive a respective control word. The respective control word specifying: (i) a plurality of trivial multiplication operations, and (ii) a plurality of bit shift operations. Any given one of the arithmetic units is further configured to estimate or calculate a product of the respective signal of the arithmetic unit respective signal value and the respective coefficient of the arithmetic unit by performing the trivial multiplication operations and bit shift operations that are specified by the respective control word that is received at the given arithmetic unit.

A test and measurement system for analyzing a device under test, including a database configured to store test results related to tests performed with one or more prior devices under test, a receiver to receive new test results about a new device under test, a data analyzer configured to analyze the new test results based on the stored test results, and a health score generator configured to generate a health score for the new device under test based on the analysis from the data analyzer.