An athermal arrayed waveguide grating includes a silicon-based substrate and an athermal arrayed waveguide disposed on the silicon-based substrate. The athermal arrayed waveguide includes a cladding layer and a waveguide chip layer, the waveguide chip layer is disposed on the cladding layer and has a refractive index greater than that of the cladding layer; the waveguide core layer includes multilayer structures having a periodic configuration, the multilayer structure includes two layers of silica material and a negative temperature coefficient material disposed between the two layers of silica material; the negative temperature coefficient material is used to compensate for a dimensional deformation of the silicon-based substrate after being heated. The present invention simplifies the structure of the athermal arrayed waveguide grating, sets the negative temperature coefficient material in the waveguide core layer structure, and makes the final temperature coefficient of refractive index of the waveguide structure is a negative number.

The present invention discloses a wavelength controllable arrayed waveguide grating, of which the dispersion equation of the arrayed waveguide grating is:

[00001]$n_s\left(\frac{d_1.Math.x_1}{f_1}-\frac{d.Math.x}{f}\right)+n_c\Delta L=m\lambda ,$

where, λ is the work wavelength of the arrayed waveguide grating; ΔL is the geometric length difference between the adjacent arrayed waveguides in the waveguide array; m is the multiple of the central wavelength; n_s is the effective refractive index of the free transmission region; n_c is the effective refractive index of the transmission waveguide; d_1 and d represent the distances between the arrayed waveguides in the first free transmission region and the second free transmission region, respectively; f_1 and f are focal lengths of the first slab waveguide and the second slab waveguide, respectively; x_ 1 and x represent the positions of the input waveguide and the output waveguide on the Rowland circle, respectively.

An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a photonic die, an encapsulant and a wave guide structure. The photonic die includes: a substrate, having a wave guide pattern formed at front surface; and a dielectric layer, covering the front surface of the substrate, and having an opening overlapped with an end portion of the wave guide pattern. The encapsulant laterally encapsulates the photonic die. The wave guide structure lies on the encapsulant and the photonic die, and extends into the opening of the dielectric layer, to be optically coupled to the wave guide pattern.

A wavelength checker includes an optical converter composed of a conversion material that converts infrared light into visible light. The optical converter is disposed, on an output side (side from which light is output to an external space) of a plurality of first output waveguides of an optical waveguide chip, to receive emitted light that is guided through the first output waveguides and reflected on and emitted from the light emitting-side end surface. The light emitting-side end surface is a reflection surface that is inclined to face a main substrate.

A signal-distributing device that includes an arrayed-waveguide-grating demultiplexer and at least one receiving module. Each receiving module includes a multimode interference coupler and two output waveguides, the multimode interference coupler being located between the arrayed-waveguide-grating demultiplexer and the two output waveguides. The multimode interference coupler is configured to distribute, to the two output waveguides, an optical signal delivered by the arrayed-waveguide-grating demultiplexer. Such a device allows wavelength shifts in the signal delivered by a set of one or more sensors, in particular Bragg grating reflectors inscribed in a given optical fibre, to be measured. It allows a wavelength shift to be measured with a high linearity and a signal-to-noise ratio.

Provided herein are systems, devices, and methods for improved optical waveguide transmission and alignment in an analytical system. Waveguides in optical analytical systems can exhibit variable and increasing back reflection of single-wavelength illumination over time, thus limiting their effectiveness and reliability. The systems are also subject to optical interference under conditions that have been used to overcome the back reflection. Novel systems and approaches using broadband illumination light with multiple longitudinal modes have been developed to improve optical transmission and analysis in these systems. Novel systems and approaches for the alignment of a target waveguide device and an optical source are also disclosed.

A photonic chip includes a device layer and a port layer, with an optical port located at the port layer. Inter-layer optical couplers are provided for coupling light between the device and port layers. The inter-layer couplers may be configured to couple signal light but block pump light or other undesired wavelength from entering the device layer, operating as an input filter. The port layer may accommodate other light pre-processing functions, such as optical power splitting, that are undesirable in the device layer.

The present disclosure relates to polarization rotator-splitters that include oxide claddings. One example embodiment includes a device. The device includes a first waveguide. The first waveguide includes a first end configured to receive electromagnetic waves having a first polarization with a first mode-order and electromagnetic waves having a second polarization. The first waveguide also includes a mode-conversion section configured to convert electromagnetic waves having the second polarization into electromagnetic waves having the first polarization with a second mode-order. Additionally, the device includes a second waveguide. The second waveguide also includes a coupling section configured such that electromagnetic waves having the first polarization with the second mode-order are converted into electromagnetic waves having the first polarization with the first mode-order and coupled from the coupling section of the first waveguide into the coupling section of the second waveguide.

An integrated waveguide polarizer comprising: a plurality of silicon layers and a plurality of silicon-nitride layers; each of the plurality of silicon layers and each of the plurality of silicon-nitride layers having a first end and an opposite second end, the first end having a wide width and the second end having a narrow width, such that each silicon layer and each silicon-nitride layer have tapered shapes; wherein the pluralities of silicon and silicon-nitride layers are overlapped, such that at least a portion of each silicon-nitride layer overlaps at least a portion of each silicon layer; and a plurality of oxide layers disposed between the pluralities of silicon-nitride and silicon layers, each oxide layer creating a separation spacing between each silicon-nitride and each silicon layers; wherein, when an optical signal is launched through the integrated waveguide polarizer, the optical signal is transitioned between each silicon-nitride layer and each silicon layer.