Patent classifications
G02B6/12023
Silicon photonics device and communication system therefor
A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm300 nm symmetric grating waveguides or an Echelle grating structure characterized by a top silicon thickness of 300 nm. The waveguide structure can also include an index compensator material configured to provide at least two material index ratings in the waveguide structure.
FIBER BRAGG GRATING INTERROGATOR ASSEMBLY AND METHOD FOR THE SAME
A fiber Bragg grating interrogator assembly, comprising: an optical fiber including a fiber Bragg grating (FBG; 122) having a variable Bragg wavelength (.sub.B) and a dynamic range of interest (.sub.dyn,B) over which the Bragg wavelength (.sub.B) can shift during use; a light source operably connected to the optical fiber, and configured to illuminate the fiber Bragg grating to solicit a response therefrom; and an response analyzer, including: a spectrally selective device having an input port and a plurality of output ports (149-n), wherein the input port is operably connected to the optical fiber and wherein each of the output ports is associated with a respective spectral range (.sub.n), said spectrally selective device being configured to provide a spectral energy distribution of a response of the fiber Bragg grating received on the input port onto said output ports.
SILICON PHOTONICS DEVICE AND COMMUNICATION SYSTEM THEREFOR
A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm300 nm symmetric grating waveguides or an Echelle grating structure characterized by a top silicon thickness of 300 nm. The waveguide structure can also include an index compensator material configured to provide at least two material index ratings in the waveguide structure.