A waveguide-coupled Silicon Germanium (SiGe) photodetector. A p-n silicon junction is formed in a silicon substrate by an n-doped silicon region and a p-doped silicon region, a polysilicon rib is formed on the silicon substrate to provide a waveguide core for an optical mode of radiation, and an SiGe pocket is formed in the silicon substrate along a length of the polysilicon rib and contiguous with the p-n silicon junction. An optical mode of radiation, when present, substantially overlaps with the SiGe pocket so as to generate photocarriers in the SiGe pocket. An electric field arising from the p-n silicon junction significantly facilitates a flow of the generated photocarriers through the SiGe pocket. In one example, such photodetectors have been fabricated using a standard CMOS semiconductor process technology without requiring changes to the process flow (i.e., “zero-change CMOS”).

An optical fiber adapter and method of fabricating the same from a wafer including a double silicon-on-insulator layer structure. The optical fiber adapter may include a mode converter, a trench, and a V-groove, the V-groove and the trench operating as passive alignment features for an optical fiber, in the transverse translational and rotational degrees of freedom, and in the longitudinal translational degree of freedom, respectively. The mode converter may include a buried tapered waveguide.

Methods and techniques are presented to inhibit crystallization in optical waveguide structures, during high temperature annealing or deposition, thus preventing the formation of crystalline grains that scatter and/or absorb light. Dopant atoms or molecules are used to disrupt crystallization. The dopant atoms or molecules are selected to be transparent to the optical signal's wavelength range(s). Optical signals propagating in a waveguide that is fabricated with such techniques will experience reduced propagation loss or insertion loss. The passive dopants can also be used in active devices such as lasers or optical amplifiers that incorporate optically active dopants, as long as the passive dopants are chosen so that they do not interact with the active dopants.

A silicon optical modulator includes two silicon waveguide branches coupled between a 2×2 splitter at a common input end and a 2×2 splitter at a common output end. The modulator further includes at least one of the two silicon waveguide branches comprising a ridge-shape having a central portion of a height sandwiched in a width direction by a first side portion and a second side portion throughout a length of the waveguide. The central portion in each cross-section plane thereof includes a p-region and a n-region separated by a continuous borderline to form an irregular shaped PN junction. The borderline is configured to have at least one section-line with a sloped angle relative to the width direction and have a total border-length substantially longer than the height. The p-region is in contact with the first side portion and the n-region is in contact with the second side portion.

A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

A waveguide device and method of doping a waveguide device, the waveguide device comprising a rib waveguide region, the rib waveguide region having: a base, and a ridge extending from the base, wherein: the base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; a first doped slab region extends along the first slab region; a second doped slab region extends along the second slab region; a first doped sidewall region extends along a first sidewall of the ridge and along a portion of the first slab, the first doped sidewall region being in contact with the first doped slab region at a first slab interface; and a second doped sidewall region extends along a second sidewall of the ridge and along a portion of the second slab, the second doped sidewall region being in contact with the second doped slab region at a second slab interface; and wherein the separation between the first sidewall of the ridge and the first slab interface is no more than 10 μm; and wherein the separation between the second sidewall of the ridge and the second slab interface is no more than 10 μm.

A method of trimming the refractive index of material forming at least part of one or more structures integrated in one or more pre-fabricated devices, the method comprising: implanting one or more first regions of material of one or more pre-fabricated devices, encompassing at least partially one or more device structures, with ions to alter the crystal form of the material within the one or more first regions and change the refractive index of the material within the one or more first regions; and heat treating one or more second regions of material of the one or more devices, encompassing at least partially the one or more first regions, to alter the crystal form of the material within the one or more first regions encompassed by the one or more second regions and change the refractive index thereof, thereby trimming the refractive index of the material of at least part of the one or more device structures, such that the one or more device structures provide one or more predetermined device outputs.

Methods for post-fabrication trimming of a silicon ring resonator are disclosed. Methods include fabricating a heating element, positioned within 2 microns of the silicon ring resonator, subjecting the silicon ring resonator to energetic ion implantation, and annealing the silicon ring resonator, using the heating element. The energetic ion implantation shifts a resonance of the silicon ring resonator towards the red side of the electro-magnetic spectrum. The annealing shifts the resonance of the silicon ring resonator towards the blue side of the electro-magnetic spectrum.

Provided is a light detecting device including a light input device configured to receive light, a plurality of waveguides extending from the light input device, the plurality of waveguides being configured to transmit portions of the light received by the light input device, respectively, a plurality of modulators provided on the plurality of waveguides and configured to modulate phases of the portions of light transmitted in the plurality of waveguides, respectively, at least one graphene layer configured to absorb the portions of light transmitted in the plurality of waveguides, and at least one first electrode and at least one second electrode electrically connected to the at least one graphene layer, respectively.

A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.