Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

An optical mode converter and method of fabricating the same from wafer including a double silicon-on-insulator layer structure. The method comprising: providing a first mask over a portion of a device layer of the DSOI layer structure; etching an unmasked portion of the device layer down to at least an upper buried oxide layer, to provide a cavity; etching a first isolation trench and a second isolation trench into a mode converter layer, the mode converter layer being: on an opposite side of the upper buried oxide layer to the device layer and between the upper buried oxide layer and a lower buried oxide layer, the lower buried oxide layer being above a substrate; wherein the first isolation trench and the second isolation trench define a tapered waveguide; filling the first isolation trench and the second isolation trench with an insulating material, so as to optically isolate the tapered waveguide from the remaining mode converter layer; and regrowing the etched region of the device layer.

A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.

A Dual-wavelength hybrid (DWH) device includes an n-type ohmic contact layer, cathode and anode terminal electrodes, first and second injector terminal electrodes, p-type and n-type modulation doped QW structures, and first through sixth ion implant regions. The first injector terminal electrode is formed on the third ion implant region that contacts the p-type modulation doped QW structure and the second injector terminal electrode is formed on the fourth ion implant region that contacts the n-type modulation doped QW structure. The DWH device operates in at least one of a vertical cavity mode and a whispering gallery mode. In the vertical cavity mode, the DWH device converts an in-plane optical mode signal to a vertical optical mode signal, whereas in the whispering gallery mode the DWH device converts a vertical optical mode signal to an in-plane optical mode signal.

The disclosure provides a method of forming an erasable optical coupler in a photonic device comprising a conventional optical waveguide formed in a crystalline wafer. The method comprises selectively implanting ions in a localized region of the wafer material adjacent to the conventional waveguide of the photonic device, to cause modification of the crystal lattice structure of, and a change in refractive index in, the ion implanted region of the wafer material to thereby form an ion implanted waveguide optically coupled to the adjacent conventional waveguide to couple light out therefrom, or in thereto. The crystalline wafer material and ion implanted waveguide are such that the crystal lattice structure or composition can be modified to adjust or remove the optical coupling with the conventional waveguide by further modification of the refractive index in the ion implanted region.

The invention provides an optical absorber and an optical absorption chip integrated with a dielectric optical waveguide. The optical absorber comprises a waveguide cladding, a dielectric optical waveguide core and an absorption material layer, wherein the waveguide cladding surrounds the dielectric optical waveguide core and the absorption material layer, the dielectric optical waveguide core comprises a first end and a second end, a radial dimension of the dielectric optical waveguide core gradually decreases from the first end to the second end, a material of the absorption material layer can be metal or silicon, and the absorption material layer can be located on an upper layer of the dielectric optical waveguide core, or on a side of the dielectric optical waveguide core, or on a lower layer of the dielectric optical waveguide core, so that the optical absorber can reduce back-reflection and allow light to be completely absorbed.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

An optical waveguide termination comprising a light-receiving inlet for receiving light to be terminated, a curved section extending from the inlet and having a continuously decreasing radius of curvature, and a light-terminating tip at an end of the curved section. The curved section may define a spiral waveguide, for example a logarithmic spiral, having a waveguide width that continuously decreases from the inlet to the tip.

A method of fabricating a P-N junction in a semiconductor structure, e.g. silicon (Si) structure, is presented. The method may include several implantation steps performed at a single implantation angle with respect to the Si structure. In a first implantation step, a first dopant species is implanted over a first portion of the Si structure including a first edge of the Si structure. In a second implantation step, a second dopant species is implanted over a second portion of the Si structure including a second edge of the Si structure opposed to the first edge but excluding the first edge. The first portion and the second portion may overlap in a central portion of the Si structure between the first edge and the second edge, such that the second dopant species may be implanted below the first dopant species. In a third implantation step, the second dopant species is implanted over the second portion of the Si structure including the second edge of the Si structure opposed to the first edge but excluding the first edge, such that the second dopant species is implanted above the first dopant species.