A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

Disclosed herein are approaches for adjusting local refractive index for photonics IC systems using selective waveguide ion implantation. In one approach, a method may include depositing an optical device film atop a base layer, patterning the optical device film into a plurality of sections, and implanting a first section of the plurality of sections of the optical device film to adjust a refractive index of the first section.

A rectangular optical waveguide, an optical phase shifter and an optical modulator each formed of a semiconductor layer are formed on an insulating film constituting an SOI wafer, and then a rear insulating film formed on a rear surface of the SOI wafer is removed. Moreover, a plurality of trenches each having a first depth from an upper surface of the insulating film are formed at a position not overlapping with the rectangular optical waveguide, the optical phase shifter and the optical modulator when seen in a plan view in the insulating film. As a result, since an electric charge can be easily released from the SOI wafer even when the SOI wafer is later mounted on the electrostatic chuck included in the semiconductor manufacturing apparatus, the electric charge is less likely to be accumulated on the rear surface of the SOI wafer.

A method of fabricating a P-N junction in a semiconductor structure, e.g. silicon (Si) structure, is presented. The method may include several implantation steps performed at a single implantation angle with respect to the Si structure. In a first implantation step, a first dopant species is implanted over a first portion of the Si structure including a first edge of the Si structure. In a second implantation step, a second dopant species is implanted over a second portion of the Si structure including a second edge of the Si structure opposed to the first edge but excluding the first edge. The first portion and the second portion may overlap in a central portion of the Si structure between the first edge and the second edge, such that the second dopant species may be implanted below the first dopant species. In a third implantation step, the second dopant species is implanted over the second portion of the Si structure including the second edge of the Si structure opposed to the first edge but excluding the first edge, such that the second dopant species is implanted above the first dopant species.

A split electrode vertical cavity optical device includes an n-type ohmic contact layer, first through fifth ion implant regions, cathode and anode electrodes, first and second injector terminals, and p and n type modulation doped quantum well structures. The cathode electrode and the first and second ion implant regions are formed on the n-type ohmic contact layer. The third ion implant region is formed on the first ion implant region and contacts the p-type modulation doped QW structure. The fourth ion implant region encompasses the n-type modulation doped QW structure. The first and second injector terminals are formed on the third and fourth ion implant regions, respectively. The fifth ion implant region is formed above the n-type modulation doped QW structure and the anode electrode is formed above the fifth ion implant region.

A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.

A Dual-wavelength hybrid (DWH) device includes an n-type ohmic contact layer, cathode and anode terminal electrodes, first and second injector terminal electrodes, p-type and n-type modulation doped QW structures, and first through sixth ion implant regions. The first injector terminal electrode is formed on the third ion implant region that contacts the p-type modulation doped QW structure and the second injector terminal electrode is formed on the fourth ion implant region that contacts the n-type modulation doped QW structure. The DWH device operates in at least one of a vertical cavity mode and a whispering gallery mode. In the vertical cavity mode, the DWH device converts an in-plane optical mode signal to a vertical optical mode signal, whereas in the whispering gallery mode the DWH device converts a vertical optical mode signal to an in-plane optical mode signal.

A semiconductor device that includes an optical resonator spaced from a waveguide structure to provide for evanescent-wave optical coupling therebetween. The optical resonator includes a closed loop waveguide defined by a vertical thyristor structure. In one embodiment, the vertical thyristor structure is formed by an epitaxial layer structure including complementary (both an n-type and a p-type) modulation doped quantum well interfaces formed between an N+ region and a P+ region.

A semiconductor device that includes an optical resonator spaced from a waveguide structure to provide for evanescent-wave optical coupling therebetween. The optical resonator includes a closed loop waveguide defined by an epitaxial layer structure that includes at least one quantum well. The semiconductor device also includes circuitry configured to supply an electrical signal that flows within the epitaxial layer structure of the closed loop waveguide. The electrical signal affects charge density in at least quantum well of the closed loop waveguide and controls refractive index of the closed loop waveguide. In one embodiment, the electrical signal is a DC current signal that flows within a vertical thyristor structure of the closed loop waveguide to control refractive index of the closed loop waveguide such that resonance frequency of the closed loop waveguide corresponds to a characteristic wavelength of light.

A semiconductor device employs an epitaxial layer arrangement including a first ohmic contact layer and first modulation doped quantum well structure disposed above the first ohmic contact layer. The first ohmic contact layer has a first doping type, and the first modulation doped quantum well structure has a modulation doped layer of a second doping type. At least one isolation ion implant region is provided that extends through the first ohmic contact layer. The at least one isolation ion implant region can include oxygen ions. The at least one isolation ion implant region can define a region that is substantially free of charge carriers in order to reduce a characteristic capacitance of the device. A variety of high performance transistor devices (e.g., HFET and BICFETs) and optoelectronic devices can employ this device structure. Other aspects of wavelength-tunable microresonantors and related semiconductor fabrication methodologies are also described and claimed.