G02F1/1524

Mitigating defects in an electrochromic device under a bus bar

Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

Electro-optic elements and method of forming
11624962 · 2023-04-11 · ·

An electro-optic element includes a first electroactive compartment including an electroactive film having a first electroactive component and a second electroactive compartment including an electroactive solution or gel having a second electroactive component. An ion selective material is disposed between the first and second electroactive compartments and is configured to inhibit diffusion of the second electroactive component in an activated state from the second electroactive compartment to the first electroactive compartment. At least one of the first and second electroactive components is electrochromic such that the electro-optic element is configured to reversibly attenuate transmittance of light having a wavelength within a predetermined wavelength range when an electrical potential is applied to the electro-optic element.

Electro-optic elements and method of forming
11624962 · 2023-04-11 · ·

An electro-optic element includes a first electroactive compartment including an electroactive film having a first electroactive component and a second electroactive compartment including an electroactive solution or gel having a second electroactive component. An ion selective material is disposed between the first and second electroactive compartments and is configured to inhibit diffusion of the second electroactive component in an activated state from the second electroactive compartment to the first electroactive compartment. At least one of the first and second electroactive components is electrochromic such that the electro-optic element is configured to reversibly attenuate transmittance of light having a wavelength within a predetermined wavelength range when an electrical potential is applied to the electro-optic element.

Active ir camouflage device, plasmonic system, and related methods

An active IR camouflage device may include a base layer, a first dielectric layer over the base layer, a phase transition material layer over the first dielectric layer, a second dielectric layer over the phase transition material layer, and a first metal layer over the second dielectric layer and defining a pattern of openings therein. The active IR camouflage device may have circuitry configured to selectively cause a transition from a first phase state to a second phase state of the phase transition material layer to control IR reflectance/emission of a top plasmonic layer, making it appear/disappear from the IR detector/camera. In some embodiments, the active IR camouflage device may also include a second metal layer between the base layer and the first dielectric layer.

Active ir camouflage device, plasmonic system, and related methods

An active IR camouflage device may include a base layer, a first dielectric layer over the base layer, a phase transition material layer over the first dielectric layer, a second dielectric layer over the phase transition material layer, and a first metal layer over the second dielectric layer and defining a pattern of openings therein. The active IR camouflage device may have circuitry configured to selectively cause a transition from a first phase state to a second phase state of the phase transition material layer to control IR reflectance/emission of a top plasmonic layer, making it appear/disappear from the IR detector/camera. In some embodiments, the active IR camouflage device may also include a second metal layer between the base layer and the first dielectric layer.

ELECTROCHROMIC CATHODE MATERIALS
20230148443 · 2023-05-11 ·

Various embodiments herein relate to electrochromic devices and electrochromic device precursors, as well as methods and apparatus for fabricating such electrochromic devices and electrochromic device precursors. In certain embodiments, the electrochromic device or precursor may include one or more particular materials such as a particular electrochromic material and/or a particular counter electrode material. In various implementations, the electrochromic material includes tungsten titanium molybdenum oxide. In these or other implementation, the counter electrode material may include nickel tungsten oxide, nickel tungsten tantalum oxide, nickel tungsten niobium oxide, nickel tungsten tin oxide, or another material.

PINHOLE MITIGATION FOR OPTICAL DEVICES

Methods, apparatus, and systems for mitigating pinhole defects in optical devices such as electrochromic windows. One method mitigates a pinhole defect in an electrochromic device by identifying the site of the pinhole defect and obscuring the pinhole to make it less visually discernible. In some cases, the pinhole defect may be the result of mitigating a short-related defect

PINHOLE MITIGATION FOR OPTICAL DEVICES

Methods, apparatus, and systems for mitigating pinhole defects in optical devices such as electrochromic windows. One method mitigates a pinhole defect in an electrochromic device by identifying the site of the pinhole defect and obscuring the pinhole to make it less visually discernible. In some cases, the pinhole defect may be the result of mitigating a short-related defect

COUNTER ELECTRODE MATERIAL FOR ELECTROCHROMIC DEVICES

Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.

COUNTER ELECTRODE FOR ELECTROCHROMIC DEVICES
20170357135 · 2017-12-14 ·

The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel-tungsten-niobium-oxide (NiWNbO). This material is particularly beneficial in that it is very transparent in its clear state.