Provided is a resin which has high elongation, low stress, high sensitivity and high film retention ratio if used in a photosensitive resin composition. A photosensitive resin composition that contains a resin which has a structure represented by general formula (1) and/or general formula (2), and which is characterized in that (a) 10-80% by mole of an organic group having an alicyclic structure and 4-40 carbon atoms is contained as the R.sup.1 moiety of general formulae (1) and (2), and (b) 10-80% by mole of an organic group having a polyether structure with 20-100 carbon atoms is contained as the R.sup.2 moiety of general formulae (1) and (2). (In general formulae (1) and (2), R.sup.1 represents a tetravalent organic group having a monocyclic or condensed polycyclic alicyclic structure and 4-40 carbon atoms; R.sup.2 represents a divalent organic group having a polyether structure with 20-100 carbon atoms; R.sup.3 represents a hydrogen atom or an organic group having 1-20 carbon atoms; each of n1 and n2 represents a number within the range of 10-100,000; and p and q represents integers satisfying 0p+q6.)

Regarding cured pattern films for semiconductor apparatuses, the present invention provides a photosensitive resin composition that is high in sensitivity and able to realize improved contact between a cured pattern film and metal wiring after a reflow process. The photosensitive resin composition includes an alkali-soluble resin which contains at least one selected from the group consisting of a resin (a-1) which contains, as primary component, a structure as represented by the undermentioned general formula (1), polyimides (a-2) and copolymers thereof, and a compound (c) which contains, as primary component, a structure as represented by the undermentioned general formula (2).

##STR00001##

(In general formula (1), R.sup.1 and R.sup.2 may be identical to or different from each other and each represent a divalent to octavalent organic group having 2 or more carbon atoms; R.sup.3 and R.sup.4 may be identical to or different from each other and each represent either a hydrogen atom or an organic group having 1 to 20 carbon atoms; n is an integer of 10 to 100,000; m and f are independently an integer of 0 to 2; p and q are independently an integer of 0 to 4; and m+q0 and p+q0.)

##STR00002##

(In general formula (2), R.sup.5, R.sup.6, and R.sup.7 may be identical to or different from each other and each represent either a hydrogen atom or a monovalent organic group having 1 or more carbon atoms, and at least one of R.sup.5, R.sup.6, and R.sup.7 is a monovalent organic group having 1 or more carbon atoms.)

Provided are: a pattern-forming method by which a laminate that has excellent interlayer adhesion of a resist film, yields a high-definition pattern and exhibits excellent gas barrier properties and high solvent resistance is obtained; and an electronic device produced by the same. The pattern-forming method includes: the step (1) of forming a film using a composition on a support; the exposure step (2) of irradiating a prescribed part of the thus formed film with an active energy ray to modify the developability of the prescribed part; and the development step (3) of developing the film to obtain a pattern, wherein, a plurality of compositions that differ in solubility to a developing solution are used as the composition, and the resulting pattern has a multilayer structure.

Provided is a photosensitive resin composition containing: one or more kinds of alkali-soluble from a polyimide, a polybenzoxazole, a polyimide precursor, a polybenzoxazole precursor, and a copolymer formed of two or more polymers selected from the preceding substances; and a photosensitizer. The photosensitive resin composition further contains a compound represented by general formula (1). Even when a cured film is fired at low temperature, the photosensitive resin composition exhibits superior adhesion properties with metallic materials, particularly copper, and also exhibits high chemical resistance.

A photosensitive resin material of the invention is a photosensitive resin material used to form a permanent film including one or more selected from a novolac-type phenol resin, a phenol aralkyl resin, and a hydroxystyrene resin as an alkali-soluble resin (A) and a photosensitive diazoquinone compound as a photosensitizing agent (B), in which a content of iron with respect to all non-volatile components, which is measured through flameless atomic absorption spectroscopy, is equal to or more than 0.005 ppm and equal to or less than 80 ppm, and non-ionic iron is included as the iron.

A photoresist composition and a method for forming a patterned photoresist, and a method for forming an integrated circuit pattern are provided. A photoresist composition is provided. The photoresist composition includes a first polymer, a second polymer; and a solvent. The first polymer is more soluble than the second polymer in an aqueous solution, and the first polymer has a higher etching resistance than the second polymer.

Disclosed are a phenolic hydroxyl group-containing resin which has excellent alkali developing properties and makes it possible to exhibit high heat resistance in a cured product obtained therefrom, a production method therefor, a photosensitive composition, a resist material, a coating film, a curable composition and a cured product thereof, and a resist underlayer film.

A phenolic hydroxyl group-containing resin, including a compound (A) having a molecular structure represented by the following Structural Formula (1).

##STR00001##

(In the formula, R.sup.1 represents an alkyl group, an alkoxy group, or an aryl group, R.sup.2 represents a hydrogen atom, an alkyl group, or an aryl group, m is an integer of 1 to 3, and n is an integer of 2 to 15. In the case where m is 2 or more, plural R.sup.1's may be the same as or different from each other.)

A resin composition includes a polymer including a repeating unit represented by Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as defined in the specification, and a solvent and an organic film manufactured using the same is provided.

##STR00001##

A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.

Provided is a photosensitive resin composition which comprises: (A-1) a resin containing a structure represented by general formula (1); and (B) a photo-acid generating agent. In general formula (1), X, R.sub.1 to R.sub.7, m.sub.1 to m.sub.4, n.sub.1, n.sub.2, Y and W are each as defined in the description.

##STR00001##