The present invention provides a resin composition which is highly sensitive and exhibits high chemical resistance even in the case of being baked at a low temperature of 250° C. or less and can suppress the generation of outgas after curing. The present invention is a resin composition which contains (a) an alkali-soluble resin containing polyimide, polybenzoxazole, polyamide-imide, a precursor of any one of these compounds and/or a copolymer of these compounds and (b) an alkali-soluble resin having a monovalent or divalent group represented by the following general formula (1) in a structural unit and in which the modification rate of a phenolic hydroxyl group in the alkali-soluble resin (b) is 5% to 50%.

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(In general formula (1), O represents an oxygen atom. R.sup.1 represents a hydrogen atom or a hydrocarbon group which has 1 to 20 carbon atoms and may be substituted and R.sup.2 represents an alkyl group having 1 to 5 carbon atoms. s and t each independently represent an integer from 0 to 3. Provided that (s+t)≥1. d represents an integer from 0 to 2. u represents an integer from 1 to 2, and * represents a chemical bond.)

A film patterning method, an array substrate, and a manufacturing method of an array substrate are disclosed. The film patterning method includes: applying photoresist on a film to be patterned; performing exposure and development on the photoresist, a region corresponding to a completely removed portion of the photoresist after the exposure and the development being a first region; post-baking the photoresist, so that the photoresist is melted and collapsed to change the region corresponding to the completely removed portion into a second region, the photoresist after post-baking forms into a mask pattern; and patterning the film by using the mask pattern as a mask.

[Problem] The present invention provides a method of manufacturing a resist pattern of effectively below the resolution limit, which is suitable for use in the liquid crystal display device manufacturing field. In particular the present invention provides a method of accurately manufacturing a high-defined pattern of below the resolution limit while maintaining a pattern shape having a taper shape. [Means for Solution] A method of manufacturing a fine pattern comprising the following steps of: coating a resist composition comprising a novolak resin having an alkali dissolution rate of 100 to 3,000 Å on a substrate to form a resist composition layer; subjecting said resist composition layer to exposure; developing said resist composition layer to form a resist pattern; subjecting said resist pattern to flood exposure; coating a fine pattern forming composition on the surface of said resist pattern to form a fine pattern forming composition layer; heating said resist pattern and said fine pattern forming composition layer to cure the regions of said fine pattern forming composition layer in the vicinity of said resist pattern and to form an insolubilized layer; and removing uncured regions of said fine pattern forming composition layer.

[Problem] The present invention provides a method of manufacturing a resist pattern of effectively below the resolution limit, which is suitable for use in the liquid crystal display device manufacturing field. In particular, the present invention provides a method of accurately manufacturing a high-defined pattern of below the resolution limit while maintaining or improving a pattern shape having a taper shape. [Means for Solution]A method of manufacturing a high-defined pattern comprising the following steps of: coating a resist composition comprising a novolak resin having an alkali dissolution rate of 100-3,000 Å on a substrate to form a resist composition layer; subjecting said resist composition layer to exposure; developing said resist composition layer to form a resist pattern; heating said resist pattern; subjecting said resist pattern to flood exposure; coating a fine pattern forming composition on the surface of said resist pattern to form a fine pattern forming composition layer; heating said resist pattern and said fine pattern forming composition layer to cure the regions of said fine pattern forming composition layer in the vicinity of said resist pattern and to form an insolubilized layer; removing uncured regions of said fine pattern forming composition layer to form a fine pattern; and heating said fine pattern.

The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.

Photoresist compositions are provided comprising a radiation sensitive component and at least two distinct novolak resins. In one aspect, photoresists of the invention exhibit notably high dissolution rates, such as in excess of 800 angstroms per second in aqueous developer solution. In another aspect, photoresists of the invention can exhibit good photospeeds, such as 100 mJ/cm.sup.2 or less.

The present application for patent relates to a light-sensitive positive working photosensitive composition especially useful for imaging thick films using a composition which gives very good film uniformity and promotes a good process latitude against feature pattern collapse in patterns created upon imaging and developing of these films.

The present invention provides a negative type photosensitive resin composition having high sensitivity, excellent halftone characteristics, capability to form a small tapered pattern shape, and alkali-developability. The negative type photosensitive resin composition includes, as an alkali-soluble resin (A), at least a weakly acidic group-containing resin (A1) and an unsaturated group-containing resin (A2), the weakly acidic group-containing resin (A1) containing an acidic group having an acid dissociation constant in the range of 13.0 to 23.0 in dimethyl sulfoxide, and the unsaturated group-containing resin (A2) containing an ethylenically unsaturated double bond group.

The present disclosure relates to a photoresist composition, a method for preparing the same, and a patterning method. The photoresist composition includes: 1 wt % to 10 wt % of a photosensitizer; 10 wt % to 20 wt % of a phenolic resin; 0.1 wt % to 5.5 wt % of an additive; and 75 wt % to 88 wt % of a solvent, based on the total weight of the photoresist composition, in which the photosensitizer includes: 20 wt % to 70 wt % of a first photosensitive compound represented by formula (1), 20 wt % to 70 wt % of a second photosensitive compound represented by formula (2), and 1 wt % to 35 wt % of a third photosensitive compound represented by formula (3), based on the total weight of the photosensitizer. The photoresist composition of the present disclosure simultaneously guarantees high resolution and high sensitivity, and can meet actual production requirements.

Provided is a resin composition which makes it possible to improve the resistance to a flux to be used in soldering and the resistance to reflow, and which, when used as a photosensitive resin composition, can be cured into a film capable of being imparted with such thick film processability that the film can be processed with high sensitivity even when the thickness of the film is as high as 15 m or more. A resin composition comprising (A) a resin having a structural unit represented by general formula (1) and/or general formula (2), (B) a phenolic resin and (C) an antioxidant agent, wherein the phenolic resin (B) contains a structure represented by general formula (3).