A polyimide resin of the present invention contains a repeating unit represented by the formula (1). X.sub.1 is a tetravalent organic group having at least one ring structure, and each two of four carbonyl groups bonded to X.sub.1 form a pair and, together with X.sub.1 and a nitrogen atom, form a five-membered ring. R.sub.2 is a hydrogen, an alkyl group having 1-9 carbon atoms, or an alkoxy group having 1-10 carbon atoms. Y is a divalent organic group having a phenolic hydroxyl group. The polyimide resin of the present invention can be practically used as a thermosetting resin composition or a positive type photosensitive resin composition. ##STR00001##

The present invention relates to a photosensitive resin composition having high sensitivity, high bending resistance for the cured film, and high long-term reliability for an organic EL display device in which the cured film is used. The present invention is a photosensitive resin composition containing an alkali-soluble resin (a), a phenolic resin (b) having a halogen atom, and a photosensitive compound (c).

A method for manufacturing a semiconductor device includes steps of forming a first photoresist film on a semiconductor substrate, and forming a second photoresist film having a higher acidity than the first photoresist film on the first photoresist film, forming an opening for exposing a surface of the semiconductor substrate by patterning the first photoresist film and the second photoresist film, applying a shrink material to an upper surface of the second photoresist film and an inside of the opening, and reacting the shrink material and the second photoresist film in the inside of the opening by heat-treating the first photoresist film, the second photoresist film and the shrink material, and removing an unreacted shrink material that do not react with the second photoresist film from the upper surface of the second photoresist film and the inside of the opening.

The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent:

##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.3 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.3 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.

The present invention provides a method for forming a patterned polyimide layer with the use of a positive photoresist composition. The composition comprises a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 /s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

Provided are a laminate having excellent appearance such as tint and excellent light transmittance, a composite, and a method for producing a composite. The laminate includes a metal foil having a plurality of through-holes penetrating therethrough in a thickness direction, and a positive photosensitive resin layer provided on at least one surface of the metal foil, in which, in the metal foil, an average opening diameter of the through-holes is 0.1 to 100 m and an average opening ratio determined by the through-holes is 0.1% to 90%. The composite includes a laminate, in which the positive photosensitive resin layer has a plurality of through-holes penetrating therethrough in a thickness direction, the average opening diameter of the through-holes is 0.1 to 100 m, and the average opening ratio of the through-holes is 0.1% to 90%.

There is provided a highly sensitive colorant-containing photosensitive resin composition that can form an excellent crack resistant cured product for use in the formation of organic EL element barrier ribs. One embodiment of the photosensitive resin composition for use in organic EL element barrier ribs comprises: (A) a binder resin; (B) a phenolic hydroxyl group-containing compound having a molecular weight of 260 to 5,000 and a phenolic hydroxyl group equivalent of 80 to 155; (C) a radiation sensitive compound; and (D) a colorant selected from the group consisting of black dyes and black pigments.

A laminate comprising a thermoplastic film and a positive resist film is provided, the positive resist film comprising (A) a novolak resin-naphthoquinone diazide (NQD) base resin composition, (B) a polyester, and (C) 3-30 wt % of an organic solvent. The resist film may be transferred to a stepped support without forming voids.

A resin composition which is configured such that if the resin composition is formed into a resin composition film that has a thickness of 3.0 m after a heat treatment at a temperature within the range of 200-350 C., the resin composition film forms a heat-resistant resin film that has a light transmittance of 50% or more at a wavelength of 365-436 nm before the heat treatment, while having a light transmittance of 10% or less at a wavelength of 365-436 nm after the heat treatment. Provided is a resin composition having a function of absorbing ultraviolet light and visible light in a short wavelength range, which is suitable for the formation of a planarization film, an insulating layer and a partition wall that are used for organic light emitting devices or display devices.

To provide a resist material that can form a film with high smoothness and uniformity and has high patterning performance, such as resolution, a resist material is provided that contains a calixarene compound (A) with a molecular structure represented by the following structural formula (1) and a resin component (B);

##STR00001##

wherein R.sup.1 denotes a perfluoroalkyl group or a structural moiety with a perfluoroalkyl group; R.sup.2 denotes a hydrogen atom, a polar group, a polymerizable group, or a structural moiety with a polar group or a polymerizable group; R.sup.3 denotes a hydrogen atom, an aliphatic hydrocarbon group that optionally has a substituent, or an aryl group that optionally has a substituent; n denotes an integer in the range of 2 to 10; and * denotes a bonding point with an aromatic ring.