A resist underlayer film allows an excellent resist pattern shape to be formed when an upper resist layer is exposed to light and developed using an alkaline developing solution or organic solvent; and composition for forming the resist underlayer film. A resist underlayer film-forming composition for lithography, the composition including, as a silane, hydrolyzable silane, hydrolysis product thereof, hydrolysis-condensation product thereof, or combination, wherein the hydrolyzable silane includes hydrolyzable silane of Formula (1):
R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)  Formula (1)
[where R.sup.1 is an organic group of Formula (2):
—R.sup.4—R.sup.5—R.sup.6  Formula (2)
(where R4 is optionally substituted C1-10 alkylene group; R5 is a sulfonyl group or sulfonamide group; and R6 is a halogen-containing organic group)]. In Formula (2), R6 may be a fluorine-containing organic group like trifluoromethyl group. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate, followed by baking. The underlayer film-forming composition may include acid as a hydrolysis catalyst, or water.

The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.

A method of manufacturing an image element array for a security device is disclosed. The method comprises: (a) providing a metallised substrate web comprising a substrate having a first metal layer thereon on a first surface of the substrate, the first metal layer being soluble in a first etchant substance; (b) applying a first photosensitive resist layer to the first metal layer; (c) exposing the first photosensitive resist layer to radiation of a wavelength to which the resist layer is responsive through a patterned mask, by conveying the substrate web along a transport path and, during the exposure, moving the patterned mask alongside the substrate web along at least a portion of the transport path at substantially the same speed as the substrate web, such that there is substantially no relative movement between the mask and the substrate web, wherein the patterned mask comprises first pattern elements in which the mask is substantially opaque to the radiation and second pattern elements in which the mask is substantially transparent to the radiation, whereupon the exposed second pattern elements of the first photosensitive resist layer react resulting in increased solubility by a second etchant substance, the non-exposed first pattern elements remaining relatively insoluble by the second etchant substance; and (d) applying the first and second etchant substances to the substrate web whereupon the second pattern elements of both the first resist layer and the first metal layer are dissolved, the remaining first pattern elements of the first metal layer forming an image element array.

An object of the present invention is to provide a conductive polymer composition which has good filterability and good film formability of a flat film on an electron beam resist and can be suitably used for an antistatic film for electron beam resist writing, showing excellent antistatic property in the electron beam writing process due to the property of low volume resistivity (.Math.cm), and, reducing an effect on lithography by making an effect of an acid diffused from the film minimum, and further having excellent peelability by H.sub.2O or an alkaline developer after writing. A conductive polymer composition which comprises (A) a polyaniline-based conductive polymer having at least one kind or more of a repeating unit represented by the following general formula (1), and (B) a carboxylic acid salt represented by the following general formula (2): ##STR00001##

The present invention relates to a photosensitive resin composition having high sensitivity, high bending resistance for the cured film, and high long-term reliability for an organic EL display device in which the cured film is used. The present invention is a photosensitive resin composition containing an alkali-soluble resin (a), a phenolic resin (b) having a halogen atom, and a photosensitive compound (c).

A photoresist developer composition contains: a quaternary alkyl ammonium compound; and a corrosion inhibitor. The corrosion inhibitor contains a silane-based compound and an azole-based compound A manufacturing method of a semiconductor package includes using the photoresist developer composition.

Provided are a material for detecting photoresist and a method for detecting photoresist using the same. The material for detecting photoresist may include a macrocyclic molecule having a hollow structure and a fluorescent substance which is labeled on the macrocyclic molecule, and the macrocyclic molecule is at least one of cyclodexrin, cucurbituril, calixarene, pillararene and catenane.

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W.sub.1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W.sub.1; and W.sub.2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer.

##STR00001##

According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.

The present disclosure provides an apparatus for dispensing liquid material, including a dispensing arm, a wafer holder against the dispensing arm, a first nozzle on the dispensing arm, a first distance laterally spacing the first nozzle and a center of the wafer holder, and a first height vertically spacing the first nozzle and a surface of the wafer holder, and a second nozzle on the dispensing arm, a second distance laterally spacing the second nozzle and the center of the wafer holder, and a second height vertically spacing the second nozzle and the surface of the wafer holder, wherein the second distance is greater than the first distance, and the first height is greater than the second height.