A method for producing a conductive film having a substrate and a conductive layer disposed on the substrate has a first step of forming a precursor layer on the substrate, the precursor layer including a metal component or its precursor, a water-insoluble polymer X having a cross-linking group, a water-insoluble polymer Y having a reactive group that reacts with the cross-linking group, and a water-soluble polymer Z different from polymer X and polymer Y; a second step of reacting the cross-linking group in the water-insoluble polymer X with the reactive group in the water-insoluble polymer Y; and a third step of forming the conductive layer by removing the water-soluble polymer Z.

A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R.sup.1-R.sup.6 are monovalent hydrocarbon groups, X.sup.1 is a divalent hydrocarbon, group, Z.sup.1 is an aliphatic group, Z.sup.2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer. ##STR00001##

In a preferred aspect, organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more glycidyl groups; and 2) one or more aromatic groups that each comprises two or more substituents that comprise hydroxy, thiol and/or amine moieties. Catechol-containing polymers and methods for producing same also are provided.

A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R.sup.1-R.sup.6 are monovalent hydrocarbon groups, X.sup.1 is a divalent hydrocarbon group, Z.sup.1 is an aliphatic group, Z.sup.2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer. ##STR00001##

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer on a substrate; forming a blocking layer on the material layer, wherein a bottom portion of the blocking layer reacts with the material layer, resulting in a capping layer that seals the material layer from an upper portion of the blocking layer. The method further includes forming a photoresist layer on the blocking layer; exposing the photoresist layer; and developing the photoresist layer, resulting in a patterned photoresist layer.

The present invention provides a composition for forming an adhesive film that provides an adhesive film that yields good pattern profiles and has high adhesion to a resist upper layer film to prevent collapse of fine patterns in a fine patterning process during semiconductor apparatus manufacturing processes, as well as a patterning process using the composition and a method for forming an adhesive film using the composition. As such, provided is a composition for forming an adhesive film directly under a resist upper layer film. The composition includes: (A) a polymer containing a repeating unit shown by the following general formula (1) and a repeating unit shown by the following general formula (2); and (B) an organic solvent.

##STR00001##

A resist composition containing a resin component (A1) having a constitutional unit (a01) and a constitutional unit (a02) derived from compounds each represented by General Formulae (a01-1) and (a02-1), a compound (B1) represented by General Formula (b1), and a compound represented by General Formula (d1-1) or a compound represented by General Formula (d1-2), in the formulae, C.sup.t represents a tertiary carbon atom, a carbon atom at an ?-position of C.sup.t constitutes a carbon-carbon unsaturated bond, Wa.sup.02 represents an aromatic hydrocarbon group, and Rb.sup.1 represents hydrocarbon group, where a fluorine atom is not contained ##STR00001##

There is provided a manufacturing method for a cured substance, which makes it possible to obtain a cured substance having excellent breaking elongation, a manufacturing method for a laminate, including the manufacturing method for a cured substance, a manufacturing method for a semiconductor device, including the manufacturing method for a cured substance or the manufacturing method for a laminate, and there is provided a treatment liquid that is used in the manufacturing method for a cured substance. The manufacturing method for a cured substance includes a film forming step of applying a resin composition containing a precursor of a cyclization resin onto a base material to form a film, a treatment step of bringing a treatment liquid into contact with the film, and a heating step of heating the film after the treatment step, in which the treatment liquid contains at least one compound selected from the group consisting of a basic compound having an amide group and a base generator having an amide group.

Imaging layers on the surface of a substrate may be patterned using next generation lithographic techniques, and the resulting patterned film may be used as a lithographic mask, for example, for production of a semiconductor device.

The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.