An overlay measurement device for measuring an error between a first overlay mark and a second overlay mark respectively formed on different layers formed on a wafer is proposed. The device includes a light source, a first beam splitter configured to split a beam emitted from the light source into two beams, a first color filter configured to adjust a center wavelength and a band width of one of the beams split by the first beam splitter so that the center wavelength and the band width of one of the beams become suitable for acquiring an image of the first overlay mark.

In an exposure apparatus and a method for defocus and tilt error compensation, each of alignment sensors (500a, 500b, 500c, 500d, 500e, 500f) corresponds to and has the same coordinate in the first direction as a respective one of focusing sensors (600a, 600b, 600c, 600d, 600e, 600f), so that each of the alignment sensors (500a, 500b, 500c, 500d, 500e, 500f) is arranged on the same straight line as a respective one of the focusing sensors (600a, 600b, 600c, 600d, 600e, 600f). As such, alignment marks can be characterized with both focusing information and alignment information. This enables the correction of errors in the alignment information and thus achieves defocus and tilt error compensation, resulting in significant improvements in alignment accuracy and the production yield.

Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact apparatuses for projecting an image onto a substrate are provided. In one embodiment, an image projection apparatus includes a light pipe coupled to a first mounting plate, and a frustrated prism assembly, one or more digital micro-mirror devices, one or more beamsplitters, and one or more projection optics, which are coupled to a second mounting plate. The first and second mounting plates are coplanar, such that the image projection apparatus is compact and may be aligned in a system having a plurality of image projection apparatuses, each of which is easily removable and replaceable.

An adjustment apparatus which is an optical system having an incident face and a light exit face that is parallel to the incident face. The optical system is disposed in an exposure device. The adjustment apparatus includes at least one wedge lens and a plurality of optical lenses configured such that at least one of focal plane adjustment, magnification adjustment and position adjustment for a field of view corresponding to the exposure device is made possible through changing relative positions of at least one pair of neighboring ones of the lenses. An adjustment method corresponding to the adjustment apparatus is also provided for the focal plane adjustment, magnification adjustment and position adjustment for the field of view corresponding to the exposure device.

Autofocus system (AF) employing, in addition to specified optical units, fringe projection and fringe detection systems (FPS, FDS) and specifically-configured data processing system. AFS is configured to project with FPS a sinusoidal fringe pattern, formed by a pattern source, on a substrate and to image the so projected pattern from substrate onto optical detector with FDS to form optical image from which topology of the substrate is defined as substrate moves relative to the projected pattern. Pattern source may include diffraction grating oriented that the projected pattern is inclined relative to direction of substrate scanning Topology profile is corrected for tilt of substrate, Goos-Hanchen errors, and for fringe-pattern-induced errors outside a chosen spatial-frequency range. To reduce errors of topology profile, at least five values of phase difference are used. AFS is configured to define temporal phase shifting in optical image without using any moving parts in the AFS.

A structure in semiconductor fabrication includes at least a first periodic asymmetric feature and a periodic asymmetric second feature. The first feature contains a plurality of periodically distributed first elements. The first feature has a first asymmetric profile such that the first feature no longer has the same first asymmetric profile when it is rotated by 180 degrees. The second feature contains a plurality of periodically distributed second elements. The second feature has a second asymmetric profile such that the second feature no longer has the same second asymmetric profile when it is rotated by 180 degrees. The second asymmetric profile is different from the first asymmetric profile.

According to one embodiment, wafer lithography equipment includes an exposure unit transferring a circuit pattern onto a wafer, a measurement unit measuring a dimension of the circuit pattern and a calculator. The calculator includes calculating a first difference. The first difference is the difference between a first dimension and a second dimension. The first dimension is obtained by substituting a first exposure amount and a first focus distance into an approximate response surface function. The second dimension is measured by the measurement unit. The calculator also includes calculating a second difference. The second difference is the sum total of the first difference for all of the circuit patterns. The calculator also includes calculating a second exposure amount and a second focus distance causing the difference between the approximate response surface function and the second difference to be a minimum. The calculator also includes calculating a correction exposure amount.

The present disclosure provides methods for determining a focus spot window of a wafer and judging whether the wafer needs to be reworked, belonging to the field of semiconductor technology. The method for determining a focus spot window of a wafer includes: acquiring flatness information and location information of a local region of the wafer before exposure; acquiring distribution information of abnormal dies, process information corresponding to the abnormal dies, and data information related to wafer yield; and determining the focus spot window corresponding to a process according to the flatness information and the location information of the local region of the wafer, the distribution information of the abnormal dies, the process information corresponding to the abnormal dies, and the data information related to wafer yield.

Embodiments of the present disclosure are related to systems and methods for autofocusing an imaging apparatus in real-time during substrate scanning to pattern a substrate that includes a photoresist formed over one or more patterned materials. Displays of varying sizes can be fabricated using digital photolithography systems. The digital photolithography systems discussed herein, which may be referred to as imaging systems, use one or more exposure sources, including solid state emitter devices, for operations including patterning photoresists. Signal classifiers are used to perform shape and pattern recognition to determine whether signals received during substrate scanning are from a top photoresist surface or from sub-surface layers. One or more parameters of the imaging apparatus can be adjusted or maintained based on the signal analysis.

Provided is a through-focus image-based metrology device including an optical device, and a computing device configured to acquire at least one through-focus image of a target from the optical device, generate an intensity profile based on the acquired at least one through-focus image, and perform metrology on the target based on the generated intensity profile, wherein the optical device includes a stage on which the target is disposed, the stage being configured to move by one step in at least one direction based on control of the computing device, and to acquire the at least one through-focus image, an image sensor disposed on the stage, an objective lens disposed between the image sensor and the stage, the objective lens being configured to transmit reflected light from the target, and a light source configured to emit illumination light to the target through the objective lens.