A method for estimating a parameter across a region on a substrate, the region being divided into a plurality of sub-regions, the method including: obtaining values of the parameter for at least two sub-regions out of the plurality of sub-regions; and estimating the parameter for a position on the region by evaluation of a function having said values of the parameter as input values, wherein the function: a) has piecewise defined base functions, wherein a single base function is defined across a sub-region; and b) is continuous between one or more adjacent sub-regions of the at least two sub-regions within the region.

A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.

The control unit controls the relative position in an optical axis direction of the projection system and the relative position in a direction perpendicular to an optical axis direction at a third timing after a second timing based on a first distribution of illumination light detected by the detection system at a first timing and a second distribution of illumination light detected by the detection system at the second timing after the first timing, the illumination light detected at the first and second timings having passed through the first and second marks.

The present invention relates to a stage system (130), which comprises a pre-exposure element (134), and to a method employing the pre-exposure element for conditioning an optical system (100). The pre-exposure element comprises a radiation receiving area at a surface of the stage system, wherein the radiation receiving area comprises at least one pre-exposure plate configured to receive radiation. The stage system comprises further a controller (140), wherein the controller is capable to control an optical parameter of the pre-exposure element, herewith controlling a portion of received radiation reflected by the pre-exposure element.

Photolithography apparatus includes a radiation source, a mask to modify radiation from the radiation source so the radiation exposes photoresist layer disposed on a semiconductor substrate in patternwise manner, a wafer stage, and a controller. The wafer stage supports the semiconductor substrate. The controller determines target total exposure dose for the photoresist layer and target focus position for the photoresist layer; and controls exposure of first portion of the photoresist layer to first exposure dose of radiation at first focus position using first portion of the mask, moving the semiconductor substrate relative to the mask; and exposure of the first portion of the photoresist layer to second exposure dose of radiation using second portion of the mask at second focus position, and exposure of second portion of the photoresist layer to the second exposure dose at the second focus position using the first portion of the mask.

The present application provides a detecting method for manufacturing process of a semiconductor. Using a same photomask to expose different regions of a same wafer under different lighting conditions to acquire a plurality of photoetching patterns; and detecting the photoetching pattern. Detection results under the different lighting conditions can be acquired on the same wafer at the same time, thereby shortening detection time, improving production efficiency, and saving costs.

A method of manufacturing a semiconductor device includes selecting a diffraction based focus (DBF) mark that is unaffected by a pattern of a lower layer; manufacturing a mask including a mark pattern for forming the DBF mark; forming the DBF mark in a cell region of a wafer by using the mask; measuring the DBF mark and monitoring defocus; correcting the defocus on the basis of a result of the monitoring; and forming a pattern in the cell region of the wafer, after correcting the defocus.

An article manufacturing method includes a first formation step of forming a focus compensation film on a substrate, a second formation step of forming a resist layer on the focus compensation film, and a transfer step of transferring a pattern of an original to the resist layer using an exposure apparatus. In the first formation step, the focus compensation film is formed such that the focus compensation film has a top surface shape corresponding to an image surface shape of the exposure apparatus.

Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

Certain aspects relate to a method for improving a lithography configuration. In the lithography configuration, a source illuminates a mask to expose resist on a wafer. A processor determines a defect-based focus exposure window (FEW). The defect-based FEW is an area of depth of focus and exposure latitude for the lithography configuration with an acceptable level of defects on the wafer. The defect-based FEW is determined based on a predicted probability distribution for occurrence of defects on the wafer. A processor also determines a critical dimension (CD)-based FEW. The CD-based FEW is an area of depth of focus and exposure latitude for the lithography configuration with an acceptable level of CD variation on the wafer. It is determined based on predicted CDs on the wafer. The lithography configuration is modified based on increasing an area of overlap between the defect-based FEW and the CD-based FEW.