A wafer processing apparatus includes an X-θ stage unit having a rotary chuck capable of moving in an X direction and rotating in a θ direction, wherein a wafer is mounted on the rotary chuck and the wafer includes an edge portion adjacent to an edge of the wafer. In addition, the wafer processing apparatus includes: an edge bead removal (EBR) measurement and eccentricity measurement unit which is capable of inspecting a bead removal state of the edge portion of the wafer, and measuring eccentricity between the center of the rotary chuck and the center of the wafer; and an edge exposure of wafer (EEW) process unit which exposes the edge portion of the wafer after correcting the eccentricity between the center of the rotary chuck and the center of the wafer measured by the EBR measurement and eccentricity measurement unit.

A mode control system and method for controlling an output mode of a broadband radiation source including a photonic crystal fiber (PCF). The mode control system includes at least one detection unit configured to measure one or more parameters of radiation emitted from the broadband radiation source to generate measurement data, and a processing unit configured to evaluate mode purity of the radiation emitted from the broadband radiation source, from the measurement data. Based on the evaluation, the mode control system is configured to generate a control signal for optimization of one or more pump coupling conditions of the broadband radiation source. The one or more pump coupling conditions relate to the coupling of a pump laser beam with respect to a fiber core of the photonic crystal fiber.

A method and a system for correcting lithography process hotspots based on stress damping adjustment are provided. The method includes: acquiring a mark hotspot of a mask pattern; forming N annuli centered on the mark hotspot from inner to outer on a mask; moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout; verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.

A substrate inspection apparatus includes: a storage configured to store inspection image data obtained from a captured image of a periphery of a substrate on which a film is formed, and an inspection recipe; an edge detector configured to detect a target edge as an edge of an inspection target film on the basis of the inspection image data stored in the storage by using the inspection recipe stored in the storage; a periphery calculator configured to calculate a position of a theoretical periphery of the substrate; and a width calculator configured to calculate a width between the theoretical periphery of the substrate and the target edge on the basis of position data of the theoretical periphery of the substrate obtained by the periphery calculator and position data of the target edge obtained by the edge detector.

An EUV photomask inspection apparatus includes a plurality of optical systems respectively forming different confocal points in a mask structure including an EUV photomask and a pellicle on the EUV photomask. A first optical system among the plurality of optical systems includes a first light source emitting first light having a wavelength in a visible light range, a beam splitter transmitting or reflecting the first light, an objective lens configured to allow the first light to pass through at least a portion of the mask structure to form a first focus in the mask structure, a first light detector configured to detect first reflected light reflected from the mask structure by the incident first light, and a pinhole plate in front of the first light source. The first light detector includes a detection module including a PMT and an APD, and a thermoelectric cooling.

According to one embodiment, a pattern characteristic detection apparatus for a photomask includes a detection-data creating portion, a reference-data creating portion, an extracting portion, a first area-setting portion, a detecting portion and an collecting portion. The detection-data creating portion is configured to create detection data on the basis of an optical image of a pattern formed on a photomask. The reference-data creating portion is configured to create reference data of the pattern. The extracting portion is configured to extract a pattern for pattern characteristic detection and positional information of the extracted pattern. The first area-setting portion is configured to set an area where pattern characteristics are to be detected, and configured to extract a target pattern. The detecting portion is configured to detect pattern characteristics of the target pattern within the area. In addition, the collecting portion is configured to collect the detected pattern characteristics.

A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

An optical system used in a charged particle beam inspection system. The optical system includes one or more optical lenses, and a compensation lens configured to compensate a drift of a focal length of a combination of the one or more optical lenses from a first medium to a second medium.

The present document relates to a method of monitoring an overlay or alignment between a first and second layer of a semiconductor using a scanning probe microscopy system. The method comprises scanning the substrate surface using a probe tip for obtaining a measurement of a topography of the first and second layer in at least one scanning direction. At least one pattern template is generated which is matched with the topography of the first layer for determining a first candidate pattern. The first candidate pattern is matched with the measured second topography for obtaining a second candidate pattern to represent the measured topography of the second layer. Feature characteristics of device features are determined from both the first and second candidate pattern, and these are used to calculate one or more overlay parameters or alignment parameters.

Aspects of the present disclosure provide a method of aligning a wafer pattern. For example, the method can include providing a wafer having a reference pattern located below a front side of the wafer, and directing a light beam to the wafer. The method can further include identifying at least one of power and a wavelength of the light beam such that the light beam is capable of passing through the wafer and reaching the reference pattern, or identifying at least one of power and a wavelength of the light beam based on at least one of a material of the wafer and a depth of the reference pattern below the front side of the wafer. The method can further include using the light beam to image the reference pattern.