A method for automatically classifying one or more defects based on electrical design properties includes receiving one or more images of a selected region of a sample, receiving one or more sets of design data associated with the selected region of the sample, locating one or more defects in the one or more images of the selected region of the sample by comparing the one or more images of the selected region of the sample to the one or more sets of design data, retrieving one or more patterns of interest from the one or more sets of design data corresponding to the one or more defects, and classifying the one or more defects in the one or more images of the selected region of the sample based on one or more annotated electrical design properties included in the one or more patterns of interest.

A method and associated apparatuses for optimizing a sampling scheme which defines sampling locations on a bonded substrate, having undergone a wafer to wafer bonding process. The method includes determining a sampling scheme for a metrology process and optimizing the sampling scheme with respect to a singularity defined by a large overlay error and/or grid deformation at a central location on the bonded substrate to obtain a modified sampling scheme.

A method for clustering based on unsupervised learning according to an embodiment of the invention enables clustering for newly generated patterns and is robust against noise, and does not require tagging for training data. According to one or more embodiments, noise is accurately removed using three-dimensional stacked spatial auto-correlation, and multivariate spatial probability distribution values and polar coordinate system spatial probability distribution values are used as learning features for clustering model generation, making them robust to noise, rotation, and fine unusual shapes. In addition, clusters resulting from clustering are classified into multi-level clusters, and stochastic automatic evaluation of normal/defect clusters is possible only with measurement data without a label.

A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

A structure of interest (T) is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (19, 274, 908, 1012). A processor (PU) calculates a property such as linewidth (CD) or overlay (OV), for example by simulating (S16) interaction of radiation with a structure and comparing (S17) the simulated interaction with the detected radiation. The method is modified (S14a, S15a, S19a) to take account of changes in the structure which are caused by the inspection radiation. These changes may be for example shrinkage of the material, or changes in its optical characteristics. The changes may be caused by inspection radiation in the current observation or in a previous observation.

Lithographic patterning method for creating features on a surface of a substrate, including the steps of: applying a resist material to the surface; performing resist processing steps, including at least: selectively exposing the resist material layer to a surface treatment step, wherein the resist material in the exposed locations is chemically modified; and developing the resist material layer to selectively remove the resist material locally. The method further comprises detecting, during or after the resist processing steps, a chemical modification of the resist material for monitoring or evaluating the processing steps. The step of detecting is performed by scanning the surface using a scanning probe microscopy device, and wherein the scanning includes contacting the surface with the probe tip in a probing area. The probing area coincides with at least one location of the exposed locations and non-exposed locations, for detecting the chemical modification. The document further describes a system.

A system, method, and computer program product are provided for correcting a difference image generated from a comparison of target and reference dies. In use, an intra-die inspection of a target die image is performed to generate, for each pattern of interest, a first representative image. An intra-die inspection of a reference die image is performed to generate, for each of the patterns of interest, a second representative image. Further, the target die image and the reference die image are compared to generate at least one difference image, and the at least one difference image is corrected using each of the generated first representative images and each of the generated second representative images. Detection is then performed using the corrected difference image.

Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, columns of sensing mechanism are configured with different functions, weights and performances to inspect a sample to significantly reduce the time that would be otherwise needed when all the columns were equally applied.

Process window qualification (PWQ) layouts can be used to determine a presence of a pattern anomaly associated with the pattern, patterning process, or patterning apparatus. For example, a modulated die or field can be compared to a slightly lower offset modulated die or field. In another example, the high to low corners for a particular condition or combination of conditions are compared. In yet another example, process modulation parameters can be used to estimate criticality of particular weak points of interest.