Patent classifications
G03F7/70666
Methods and apparatus for removing contamination from lithographic tool
Embodiments described herein provide a method for cleaning contamination from sensors in a lithography tool without requiring recalibrating the lithography tool. More particularly, embodiments described herein teach cleaning the sensors using hydrogen radicals for a short period while the performance drifting is still above the drift tolerance. After a cleaning process described herein, the lithography tool can resume production without recalibration.
Process variability aware adaptive inspection and metrology
A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.
Metrology of semiconductor devices in electron micrographs using fast marching level sets
Apparatuses and methods for metrology on devices using fast marching level sets are disclosed herein. An example method at least includes initiating a fast marching level set seed on an image, propagating a fast marching level set curve from the fast marching level set seed to locate boundaries of a plurality of regions of interest within the image, and performing metrology on the regions of interest based in part on the boundaries.
Methods and apparatus for removing contamination from lithographic tool
Embodiments described herein provide a method for cleaning contamination from sensors in a lithography tool without requiring recalibrating the lithography tool. More particularly, embodiments described herein teach cleaning the sensors using hydrogen radicals for a short period while the performance drifting is still above the drift tolerance. After a cleaning process described herein, the lithography tool can resume production without recalibration.
Position detection method, position detection apparatus, lithography apparatus, and article manufacturing method
A method detects a position of a target in an image using a template having first to Nth feature points. The method includes obtaining an index indicating correlation between the template and the image by repeating processing for each relative positions of the template with respect to the image, while sequentially setting first to nth (nN) feature points as a feature point of interest. When the feature point of interest is a Jth feature point, whether an intermediate index indicating the correlation obtained based on processing of the first to Jth feature points satisfies a censoring condition is determined, and processing of (J+1)th and subsequent feature points is canceled if the intermediate index satisfies the censoring condition.
Criticality analysis augmented process window qualification sampling
Techniques are provided that can select defects based on criticality of design pattern as well as defect attributes for process window qualification (PWQ). Defects are sorted into categories based on process conditions and similarity of design. Shape based grouping can be performed on the random defects. Highest design based grouping scores can be assigned to the bins, which are then sorted. Particular defects can be selected from the bins. These defects may be reviewed.
METHODS OF GUIDING PROCESS MODELS AND INSPECTION IN A MANUFACTURING PROCESS
A method where deviations of a characteristic of an image simulated by two different process models or deviations of the characteristic simulated by a process model and measured by a metrology tool, are used for various purposes such as to reduce the calibration time, improve the accuracy of the model, and improve the overall manufacturing process.
Systems and methods for reducing resist model prediction errors
A method for calibrating a resist model. The method includes: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resist structure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained by a metrology device. The method includes adjusting one or more of the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.
Method for parameter determination and apparatus thereof
A method and apparatus to measure overlay from images of metrology targets, images obtained using acoustic waves, for example images obtained using an acoustic microscope. The images of two targets are obtained, one image using acoustic waves and one image using optical waves, the edges of the images are determined and overlay between the two targets is obtained as the difference between the edges of the two images.
Estimation of data in metrology
Methods and apparatus for estimating an unknown value of at least one of a plurality of sets of data, each set of data including a plurality of values indicative of radiation diffracted and/or reflected and/or scattered by one or more features fabricated in or on a substrate, wherein the plurality of sets of data include at least one known value, and wherein at least one of the plurality of sets of data includes an unknown value, the apparatus including a processor to estimate the unknown value of the at least one set of data based on: the known values of the plurality of sets of data, a first condition between two or more values within a set of data of the plurality of sets of data, and a second condition between two or more values being part of different sets of data of the plurality of the sets of data.