Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

A metrology system may include an optical metrology tool configured to produce an optical metrology output for one or more features on a processed substrate, and a metrology machine learning model that has been trained using a training set of (i) profiles, critical dimensions, and/or contours for a plurality of features, and (ii) optical metrology outputs for the plurality of features. The metrology machine learning model may be configured to: receive the optical metrology output from the optical metrology tool; and output the profile, critical dimension, and/or contour of the one or more features on the processed substrate.

A metrology system can be integrated within a lithographic apparatus to provide integrated metrology within the lithographic process. However, this integration can result in a throughput or productivity impact of the whole lithographic apparatus which can be difficult to predict. It is therefore proposed to acquire throughput information associated with a throughput of a plurality of substrates within a lithographic apparatus, the throughput information including a throughput parameter, and predict, using a throughput simulator, a throughput using the throughput parameter as an input parameter. The throughput simulator may be calibrated using the acquired throughput information. The impact of at least one change of a throughput parameter on the throughput of the lithographic apparatus may be predicted using the throughput simulator.

A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.

A method for calibrating a resist model. The method includes: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resist structure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained by a metrology device. The method includes adjusting one or more of the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.

A metrology system may receive a model for measuring one or more selected attributes of a target including features distributed in a selected pattern based on regression of spectroscopic scatterometry data from a scatterometry tool for a range of wavelengths. The metrology system may further generate a weighting function for the model to de-emphasize portions of the spectroscopic scatterometry data associated with wavelengths at which light captured by the scatterometry tool when measuring the target is predicted to include undesired diffraction orders. The metrology system may further direct the spectroscopic scatterometry tool to generate scatterometry data of one or more measurement targets including fabricated features distributed in the selected pattern. The metrology system may further measure the selected attributes for the one or more measurement targets based on regression of the scatterometry data of the one or more measurement targets to the model weighted by the weighting function.

A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

A method for electron beam-induced processing of a defect of a microlithographic photomask, including the steps of: a) providing an activating electron beam at a first acceleration voltage (EHT1) and a process gas in the region of a defect of the photomask for the purpose of repairing the defect, and b) producing at least one image of the photomask, in which the region of the defect is captured at least in part, by providing an electron beam at at least one second acceleration voltage (e.g., EHT2, EHT3, EHT4) which differs from the first acceleration voltage (EHT1), for the purpose of determining a quality of the repaired defect.